Doon/Munaaradda SiC Wafer

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Doonta Wafer-ka ee Silicon carbide waxaa si weyn loogu isticmaalaa sidii hayaha wafer-ka habka faafinta heerkulka sare.

Faa'iidooyinka:

Iska caabinta heerkulka sare:isticmaalka caadiga ah 1800 ℃

Kondhom sare oo kuleyl ah:u dhiganta walxaha garaafka

Adkeysi sare:Adkaanta labaad ee kaliya ka dambeysa dheemanka, boron nitride

Iska caabbinta daxalka:aashitada xooggan iyo alkali ma laha daxal ku jira, iska caabbinta daxalka ayaa ka wanaagsan tungsten carbide iyo alumina

Miisaan fudud:cufnaanta hoose, oo u dhow aluminium

Isbeddel la'aan ma jirto: isku-darka hoose ee ballaarinta kulaylka

Iska caabinta shoogga kulaylka:Waxay u adkeysan kartaa isbeddellada heerkulka fiiqan, waxay iska caabin kartaa shoogga kulaylka, waxayna leedahay waxqabad deggan

Sifooyinka Jireed ee SiC

Hantida	Qiimaha	Habka
Cufnaanta	3.21 g/cc	Saxanka iyo cabbirka
Kulayl gaar ah	0.66 J/g °K	Flash laysarka oo la riixay
Xoogga dabacsanaanta	450 MPa560 MPa	4 dhibcood oo qaloocsan, 4 dhibcood oo qaloocsan, 1300°
Adkaanta jabka	2.94 MPa m1/2	Microindentation
Adkaanta	2800	Vicker's, 500g oo culays ah
Modulus-ka Lalabeysan karo ee Young's Modulus	450 GPa430 GPa	4 pt laabasho, RT4 pt laabasho, 1300 °C
Cabbirka miraha	2 – 10 µm	SEM