I-Epitaxial Epi Graphite Barrel Susceptor

I-Epitaxial Epi Graphite Barrel Susceptor

I-Epitaxial Epi Graphite Barrel Susceptoriyithuluzi lokusekela nokushisa elenzelwe ngokukhethekile elisetshenziselwa ukubamba nokushisa ama-semiconductor substrates ngesikhathi sezinqubo zokukhiqiza ezifana nezinqubo ze-Deposition noma ze-Epitaxy.

Isakhiwo sayo sihlanganisa ngokuvamile esiyisilinda noma esimise okwebhakede kancane, ubuso bunezimbobo eziningi noma amapulatifomu okubeka ama-wafer, kungaba ukwakheka okuqinile noma okungenalutho, kuye ngendlela yokushisa.

Imisebenzi eyinhloko ye-epitaxial barrel susceptor:

1. Isithwali se-Wafer kanye nokulawula izinga lokushisa
Ubuso be-susceptor buklanywe ngamaphakethe amaningi e-wafer (njengokuhlelwa kwe-hexagonal noma i-octagonal), okungasekela ama-wafer angu-6-15 ngesikhathi esisodwa. Ukushisa okuphezulu kwe-graphite ehlanzekile kakhulu (120-150W/mK) kuqinisekisa ukudluliselwa kokushisa okusheshayo, kuhlanganiswe nomsebenzi wokujikeleza (5-20 RPM), okuholela ekuphambukeni kokushisa kobuso be-wafer okungu-<± 1 ℃ kanye nokufana kobukhulu bengqimba ye-epitaxial okungu-<1%.

2. Ukuthuthukisa isiqondiso sokugeleza kwegesi esabelayo
Isakhiwo esincane sobuso be-susceptor singaphula umphumela wesendlalelo somngcele, okuvumela ukusatshalaliswa okufanayo kwamagesi okusabela (njenge-SiH4, i-NH3) nokuthuthukisa ukuhambisana kwesilinganiso sokufakwa.

3. Ukuvikela ukungcola kanye nokulwa nokugqwala
Ama-substrate e-graphite athambekele ekuboleni nasekukhipheni ukungcola kwensimbi (njenge-Fe,Ni) emazingeni okushisa aphezulu, kuyilapho i-CVD SiC coating engu-100μm ubukhulu ingakha isithiyo esiqinile sokucindezela ukuguquguquka kwe-graphite, okuholela esilinganisweni sokukhubazeka kwe-wafer esingu-<0.1 defects/cm².

Izicelo:
-Isetshenziswa kakhulu ekukhuleni kwe-silicon epitaxial
-Kusebenza futhi epitaxy yezinye izinto ze-semiconductor njenge-GaAs, i-InP, njll.

I-VET Energy isebenzisa i-graphite emsulwa kakhulu ene-CVD-SiC coating ukuze ithuthukise ukuzinza kwamakhemikhali:

1. Izinto ze-graphite ezihlanzekile kakhulu
Ukushisa okuphezulu: Ukushisa kwe-graphite kuphindwe kathathu kune-silicon, okungadlulisa ukushisa ngokushesha kusuka emthonjeni wokushisa kuya ku-wafer futhi kunciphise isikhathi sokushisa.
Amandla omshini: Ubuningi be-graphite yengcindezi ye-isostatic ≥ 1.85 g/cm³, ekwazi ukumelana namazinga okushisa aphezulu ngaphezu kuka-1200 ℃ ngaphandle kokuguquka.

2. Ukwembozwa kwe-CVD SiC
Isendlalelo se-β - SiC sakhiwa phezu kobuso be-graphite nge-chemical vapor deposition (CVD), ngobumsulwa obungu-≥ 99.99995%, iphutha elifanayo lokujiya kokumboza lingaphansi kuka-±5%, kanti ubulukhuni bomphezulu bungaphansi kuka-Ra0.5um.

3. Ukuthuthukiswa kokusebenza:
Ukumelana nokugqwala: ingamelana namagesi agqwala kakhulu njenge-Cl2, i-HCl, njll., ingandisa isikhathi sokuphila se-epitaxy ye-GaN ngokuphindwe kathathu endaweni ye-NH3.
Ukuqina kokushisa: I-coefficient yokwanda kokushisa (4.5 × 10-6/℃) ifana ne-graphite ukuze kugwenywe ukuqhekeka kokumboza okubangelwa ukushintshashintsha kokushisa.
Ukuqina Nokumelana Nokuguguleka: Ukuqina kwe-Vickers kufinyelela ku-28 GPa, okuphindwe kayishumi kune-graphite futhi kunganciphisa ingozi yokuklwebheka kwe-wafer.