I-Epitaxial Epi Graphite Barrel Susceptor

I-Epitaxial Epi Graphite Barrel Susceptor

I-Epitaxial Epi Graphite Barrel Susceptoriyithuluzi eliklanywe ngokukhethekile lokusekela nokushisisa elisetshenziselwa ukubamba nokushisa ama-semiconductor substrates phakathi nezinqubo zokukhiqiza ezifana nezinqubo ze-Deposition noma ze-Epitaxy.

Isakhiwo sayo sihlanganisa ngokuvamile okumise okwesilinda noma okumise okwe-barrel, indawo engaphezulu ifaka amaphakethe amaningi noma izinkundla zokubeka ama-wafers, ingaba idizayini eqinile noma engenalutho, kuye ngendlela yokushisisa.

Imisebenzi esemqoka ye-epitaxial barrel susceptor:

1. Isithwali se-wafer kanye nokulawula izinga lokushisa
Indawo ye-susceptor yakhelwe ngamaphakethe wewafer amaningi (afana nokuhlelwa kwe-hexagonal noma i-octagonal), engasekela ama-wafers angu-6-15 ngesikhathi esisodwa. I-thermal conductivity ephezulu ye-high-purity graphite (120-150W/mK) iqinisekisa ukudluliswa kokushisa okusheshayo, okuhlangene nomsebenzi wokuzungezisa (5-20 RPM), okuholela ekuphambukeni kwezinga lokushisa eliwucwecwe elingu<± 1 ℃ kanye nokufana kogqinsi lwe-epitaxial <1%.

2. Ukwenziwa ngcono kwesiqondiso sokugeleza kwegesi esabelayo
I-microstructure yendawo ye-susceptor ingaphula umphumela wongqimba womngcele, okuvumela ukusatshalaliswa okufanayo kwamagesi okusabela (afana ne-SiH4, NH3) futhi kuthuthukise ukuhambisana kwezinga lokubeka.

3. Ukunqanda ukungcoliswa komhlaba kanye nokuvikela ukubola
Ama-substrates e-graphite athambekele ekuboleni futhi akhulule ukungcola kwensimbi (okufana ne-Fe,Ni) emazingeni okushisa aphezulu, kuyilapho ugqinsi lwe-CVD SiC engu-100μm ewugqinsi lungakha umgoqo ominyene ukuze ucindezele ukuvuvukalisa kwe-graphite, okuholela esilinganisweni sokukhubazeka kwe-wafer engu-<0.1 defects/cm².

Izicelo:
-Ngokuyinhloko isetshenziselwa ukukhula kwe-silicon epitaxial
-Isebenza futhi ku-epitaxy yezinye izinto ze-semiconductor ezifana ne-GaAs, i-InP, njll.

I-VET Energy isebenzisa i-graphite ehlanzekile kakhulu ene-CVD-SiC coating ukuthuthukisa ukuzinza kwamakhemikhali:

1. High ubumsulwa graphite impahla
Ukushisa okuphezulu kwe-thermal: i-thermal conductivity ye-graphite iphindwe kathathu kune-silicon, engadlulisa ngokushesha ukushisa kusuka emthonjeni wokushisa kuya ku-wafer futhi inciphise isikhathi sokushisa.
Amandla omshini: I-Isostatic pressure graphite density ≥ 1.85 g/cm ³, ekwazi ukumelana nezinga lokushisa eliphezulu ngaphezu kuka-1200 ℃ ngaphandle kokuguquka.

2. I-CVD SiC enamathela
Isendlalelo se-β - SiC sakhiwe phezu kwegraphite nge-chemical vapor deposition (CVD), enobumsulwa obungu-≥ 99.99995%, iphutha lokufana lokujiya koqweqwe olungaphansi kuka-± 5%, futhi ubulukhuni obungaphezulu bungaphansi kuka-Ra0.5um.

3. Ukuthuthukiswa kokusebenza:
Ukumelana nokugqwala: kungamelana namagesi aphezulu abolayo njenge-Cl2, i-HCl, njll, kunganweba ubude besikhathi se-GaN epitaxy izikhathi ezintathu endaweni ye-NH3.
Ukuzinza kwe-thermal: I-coefficient yokunwetshwa kwe-thermal (4.5 × 10-6/℃) ifanelana ne-graphite ukugwema ukuqhekeka kokumboza okubangelwa ukushintshashintsha kwezinga lokushisa.
Ukuqina Nokumelana Nokugqoka: Ukuqina kwe-Vickers kufinyelela ku-28 GPa, okuphindwe izikhathi ezingu-10 kune-graphite futhi kunganciphisa ingozi yokuklwebheka kwe-wafer.