He ātete angiangi me te paninga TaC mō te G5 G10

Ko te pūwero paninga CVD tantalum carbide (TaC) a VET Energy i whakawhanakehia motuhaketia, he mea hanga mō ngā āhuatanga mahi uaua pēnei i te hanga semiconductor, te tipu epitaxial wafer LED (MOCVD), te oumu tipu tioata, te maimoatanga wera korehau pāmahana teitei, me ētahi atu. Mā te hangarau whakatakotoranga kohu matū (CVD), ka hangaia he paninga tantalum carbide matotoru me te ōrite ki runga i te mata o te papa graphite, ka hoatu ki te paepae he pumau pāmahana tino teitei (>3000℃), he ātete ki te waikura konganuku rewa, he ātete ki te ru wera me ngā āhuatanga parahanga iti, ka roa ake te roa o te ratonga.

Ā mātou painga hangarau:
1. Te pumau o te pāmahana tino teitei.
3880°C Te Ira Rewa: Ka taea e te paninga tantalum carbide te mahi tonu me te pumau i runga ake i te 2500°C, he nui atu i te pāmahana pirau 1200-1400°C o ngā paninga silicon carbide (SiC) tikanga.
Ātete ki te ru wera: Ko te tauwehenga whānui wera o te paninga he rite ki te tauwehenga o te papa karāhe (6.6×10 -6 /K), ā, ka taea te tu atu i ngā huringa pikinga me te hekenga tere o te pāmahana me te rerekētanga pāmahana neke atu i te 1000°C kia kore ai e pakaru, e taka rānei.
Ngā āhuatanga ā-pūkaha pāmahana teitei: Ka eke te pakeke o te paninga ki te 2000 HK (pakari Vickers) ā, ko te modulus rapa he 537 GPa, ā, ka mau tonu te kaha hanganga pai i ngā pāmahana teitei.

2. Tino ātete ki te waikura kia pai ai te parakore o te tukanga
Ātete tino pai: He ātete tino pai ki ngā hau waikura pēnei i te H₂, NH₃, SiH₄, HCl me ngā konganuku rewa (hei tauira, Si, Ga), ka wehea katoatia te papa karāti mai i te taiao tauhohe, ā, ka karohia hoki te poke o te waro.
Hekenga iti o te poke: he tino parakore, he ārai pai i te hekenga o te hauota, te hāora me ētahi atu poke ki te paparanga karaihe, ki te paparanga epitaxial rānei, ka whakaiti i te tere hapa o ngā ngongo iti mā te neke atu i te 50%.

3. Te tino tika o te taumata nano hei whakapai ake i te ōritetanga o te tukanga
Te ōritetanga o te paninga: te ātete matotoru ≤±5%, ka eke te papatahi o te mata ki te taumata nanometer, kia tino rite ai ngā tawhā tipu o te wafer, o te tioata rānei, ā, ko te hapa ōritetanga wera <1%.
Te tika o ngā āhuatanga: e tautoko ana i te whakaritenga manawanui ±0.05mm, e urutau ana ki ngā anga 4-inihi ki te 12-inihi, ā, e tutuki ana i ngā hiahia o ngā atanga taputapu tino tika.

4. He roa te mau, he pakari hoki, e whakaiti ana i ngā utu whānui
Kaha here: Ko te kaha here i waenga i te paninga me te papa graphite he ≥5 MPa, ātete ki te horo me te kakahu, ā, ka roa ake te ora ratonga neke atu i te 3 ngā wā.

Hototahi Mīhini
He pai mō ngā taputapu whakatipu epitaxial me te tioata matua pērā i te CVD, MOCVD, ALD, LPE, me ētahi atu, e kapi ana i te whakatipu tioata SiC (tikanga PVT), te epitaxy GaN, te whakarite papa AlN me ētahi atu āhuatanga.
He maha ngā momo āhua o te pūwero e tukuna ana e mātou, pērā i te papatahi, te piko, te pūwero, me ētahi atu. Ka taea te whakarite i te matotoru (5-50mm) me te whakatakotoranga o te kōhao kia rite ki te hanganga o te kōhao kia pai ai te hototahi ki ngā taputapu.

Ngā tono matua:
Te tipu o te tioata SiC: I roto i te tikanga PVT, ka taea e te paninga te arotau i te tohatoha o te mara wera, te whakaiti i ngā hapa taha, me te whakanui ake i te horahanga tipu whai hua o te tioata ki te neke atu i te 95%.
GaN epitaxy: I roto i te tukanga MOCVD, ko te hapa ōritetanga wera o te susceptor he <1%, ā, ko te ōritetanga o te matotoru o te paparanga epitaxial ka eke ki te ±2%.
Te whakarite i te papa AlN: I roto i te tauhohenga whakamahana pāmahana teitei (>2000°C), ka taea e te paninga TaC te wehe katoa i te papa graphite, te karo i te poke o te waro, me te whakapai ake i te parakore o te karaihe AlN.