Kutheni kufuneka ukuncitshiswa?

Kwinqanaba lenkqubo yokubuyela umva,i-wafer (i-silicon wafer(kunye neesekethe ezingaphambili) kufuneka zincitshiswe ngasemva ngaphambi kokuba kudityaniswe, kudityaniswe kwaye kupakishwe ukuze kuncitshiswe ubude bokufakelwa kwephakheji, kuncitshiswe umthamo wephakheji yetshiphu, kuphuculwe ukusebenza kakuhle kokusasazwa kobushushu betshiphu, ukusebenza kombane, iipropati zoomatshini kunye nokunciphisa ubungakanani bokudityaniswe. Ukugaywa ngasemva kuneengenelo zokusebenza kakuhle kunye neendleko eziphantsi. Kuthathe indawo yeenkqubo zemveli zokugaywa okumanzi kunye nokugaywa kwe-ion ukuze kube yeyona teknoloji ibalulekileyo yokugaywa ngasemva.

I-wafer ebhityileyo

Ungenza njani ukunciphisa umzimba?

Inkqubo ephambili yokunciphisa i-wafer kwinkqubo yokupakisha yendabuko

Amanyathelo athilei-waferUkuncitshiswa kufuneka kudityaniswe i-wafer ukuze icutshungulwe kwifilimu yokuncitshiswa, uze emva koko usebenzise i-vacuum ukufunxa ifilimu yokuncitshiswa kunye netshiphu ekuyo kwitafile ye-wafer ye-ceramic enemingxuma, ulungise imigca ephakathi yesikhephe esijikelezayo nesangaphakathi yomphezulu wokusebenza wevili lokusila ledayimani elimile okwekomityi embindini we-wafer ye-silicon, kwaye i-wafer ye-silicon kunye nevili lokusila zijikeleza ii-axes zazo ukuze zisikwe. Ukusila kuquka amanqanaba amathathu: ukusila okurhabaxa, ukusila okucolekileyo kunye nokupolisha.

I-wafer ephuma kwifektri ye-wafer iyagaywa ngasemva ukuze inciphise i-wafer ibe bubukhulu obufunekayo ekupakisheni. Xa usika i-wafer, iteyiphu kufuneka ifakwe ngaphambili (kwiNdawo eSebenzayo) ukukhusela indawo yesekethe, kwaye icala elingasemva ligaywe ngaxeshanye. Emva kokugaywa, susa iteyiphu uze ulinganise ubukhulu.
Iinkqubo zokusila ezisetyenziswe ngempumelelo ekulungiseleleni i-silicon wafer ziquka ukusila itafile ejikelezayo,i-silicon waferukugaya ngokujikeleza, ukugaya ngamacala amabini, njl. Ngokuphucuka ngakumbi kweemfuno zomgangatho womphezulu wee-wafers ze-silicon zekristale enye, kuphuhliswa rhoqo ubuchwepheshe obutsha bokugaya, obufana nokugaya nge-TAIKO, ukugaya ngoomatshini beekhemikhali, ukugaya ngokupolisha kunye nokugaya ngediski yeplanethi.

Ukugaya itafile ejikelezayo:

Ukusila itafile ejikelezayo (ukusila itafile ejikelezayo) yinkqubo yokusila yokuqala esetyenziswa ekulungiseleleni i-silicon wafer kunye nokuncitshiswa komqolo. Umgaqo wayo uboniswe kuMfanekiso 1. Ii-silicon wafers zinamathele kwiikomityi zokufunxa zetafile ejikelezayo, kwaye zijikeleza ngokuhambelanayo ziqhutywa yitafile ejikelezayo. Ii-silicon wafers ngokwazo azijikelezi ngeenxa zonke; ivili lokusila linikwa amandla nge-axial ngelixa lijikeleza ngesantya esiphezulu, kwaye ububanzi bevili lokusila bukhulu kunobubanzi be-silicon wafer. Kukho iintlobo ezimbini zokusila itafile ejikelezayo: ukusila ubuso kunye nokusila ubuso. Kwisila ubuso, ububanzi bevili lokusila bukhulu kunobubanzi be-silicon wafer, kwaye i-spindle yevili lokusila itya ngokuqhubekayo kwicala layo le-axial de kube yinto engaphezulu isetyenzisiwe, kwaye emva koko i-silicon wafer ijikeleziswa phantsi kwe-drive yetafile ejikelezayo; kwisila ubuso, ivili lokusila litya kwicala lalo le-axial, kwaye i-silicon wafer ijikeleziswa ngokuqhubekayo phantsi kwe-drive yediski ejikelezayo, kwaye ukusila kugqitywa ngokusila ngokuphindaphindiweyo (ukubuyisela) okanye ukutyisa ngokuqhekeka (ukugoba).

Umfanekiso 1, umzobo wesicwangciso somgaqo wokugaya itafile ejikelezayo (ubuso obuthambileyo)

Xa kuthelekiswa nendlela yokusila, ukusila itafile ejikelezayo kuneengenelo zesantya esiphezulu sokususa, umonakalo omncinci womphezulu, kunye nokuzisebenzela ngokulula. Nangona kunjalo, indawo yokusila yokwenyani (ukusila okusebenzayo) B kunye ne-engile yokusika θ (i-engile ephakathi kwesangqa sangaphandle sevili lokusila kunye nesangqa sangaphandle se-silicon wafer) kwinkqubo yokusila iyatshintsha ngokutshintsha kwendawo yokusila yevili lokusila, okubangela amandla okusila angazinzile, okwenza kube nzima ukufumana ukuchaneka komphezulu okufanelekileyo (ixabiso eliphezulu le-TTV), kwaye kubangele ngokulula iziphene ezifana nokuwa komphetho kunye nokuwa komphetho. Itekhnoloji yokusila itafile ejikelezayo isetyenziselwa kakhulu ukucutshungulwa kwee-wafer ze-silicon ezinekristali enye ngaphantsi kwe-200mm. Ukwanda kobukhulu bee-wafer ze-silicon ezinekristali enye kubeke phambili iimfuno eziphezulu zokuchaneka komphezulu kunye nokuchaneka kokuhamba kwebhentshi yokusebenza yezixhobo, ngoko ukusila itafile ejikelezayo akufanelekanga ukusila ii-wafer ze-silicon ezinekristali enye ngaphezulu kwe-300mm.
Ukuze kuphuculwe ukusebenza kakuhle kokusila, izixhobo zokusila ezintsonkothileyo zeplane yorhwebo zihlala zisebenzisa isakhiwo samavili okusila amaninzi. Umzekelo, iseti yamavili okusila arhabaxa kunye neseti yamavili okusila amancinci zixhotyiswe kwizixhobo, kwaye itafile ejikelezayo ijikeleza isangqa esinye ukuze kugqitywe ukusila okurhabaxa kunye nokusila okuncinci ngokulandelelana. Olu hlobo lwezixhobo luquka i-G-500DS yeNkampani yaseMelika i-GTI (Umfanekiso 2).

Umfanekiso 2, izixhobo zokugaya iitafile ezijikelezayo ze-G-500DS zeNkampani ye-GTI eMelika

Ukugaya ngokujikeleza kwe-silicon wafer:

Ukuze kuhlangatyezwane neemfuno zokulungiswa kwe-silicon wafer enkulu kunye nokulungiswa kokunciphisa umva, kunye nokufumana ukuchaneka komphezulu ngexabiso elifanelekileyo le-TTV. Ngo-1988, isazi saseJapan uMatsui sacebisa indlela yokugaya ngokujikeleza i-silicon wafer (in-feedgrinding). Umgaqo wayo uboniswe kuMfanekiso 3. I-wafer ye-silicon enye yekristale kunye nevili lokugaya eliyi-cup-shaped diamond grinding elifakwe kwi-workbench lijikeleza ii-axes zazo, kwaye ivili lokugaya lihlala liphakelwa kwicala le-axial ngaxeshanye. Phakathi kwazo, ububanzi bevili lokugaya bukhulu kunobubanzi be-wafer ye-silicon ecutshungulweyo, kwaye umjikelezo walo udlula embindini we-wafer ye-silicon. Ukuze kuncitshiswe amandla okugaya kunye nokunciphisa ubushushu bokugaya, indebe yokufunxa i-vacuum idla ngokunqunyulwa ibe yimo engqukuva okanye engqukuva okanye i-engile phakathi kwe-spindle yevili lokugaya kunye ne-axis ye-spindle yendebe yokugaya ihlengahlengiswe ukuqinisekisa ukugungqa okuncinci phakathi kwevili lokugaya kunye ne-wafer ye-silicon.

Umfanekiso 3, Umzobo wesicwangciso somgaqo wokugaya ojikelezayo we-silicon wafer

Xa kuthelekiswa nokugaywa kwetafile ejikelezayo, ukugaywa kwe-silicon wafer ejikelezayo kunezi nzuzo zilandelayo: ① Ukugaywa kwe-single-wafer ngexesha elinye kunokucubungula ii-wafer ze-silicon ezinkulu ezingaphezulu kwe-300mm; ② Indawo yokugaywa yokwenyani B kunye ne-engile yokusika i-θ aziguquguquki, kwaye amandla okugaywa azinzile; ③ Ngokulungisa i-engile yokuthambekela phakathi kwe-axis yevili lokugaywa kunye ne-axis ye-silicon wafer, imilo yomphezulu we-single crystal silicon wafer inokulawulwa ngokukhutheleyo ukuze kufunyanwe ukuchaneka okungcono kwemilo yomphezulu. Ukongeza, indawo yokugaywa kunye ne-engile yokusika i-θ yokugaywa kwe-silicon wafer ejikelezayo nazo zinezibonelelo zokugaywa okukhulu, ukutyeba okulula kwi-intanethi kunye nokuchonga nokulawula umgangatho womphezulu, ulwakhiwo lwezixhobo ezincinci, ukugaywa okulula okudibeneyo kwezikhululo ezininzi, kunye nokusebenza kakuhle kokugaywa.
Ukuze kuphuculwe ukusebenza kakuhle kwemveliso kwaye kuhlangatyezwane neemfuno zemigca yemveliso ye-semiconductor, izixhobo zokugaya zorhwebo ezisekelwe kumgaqo wokugaya nge-silicon wafer ejikelezayo zamkela isakhiwo esine-spindle multi-station multi-station, esinokugqibezela ukugaya okurhabaxa kunye nokugaya okucolekileyo kwi-loading enye kunye nokukhulula. Idityaniswe nezinye izibonelelo ezincedisayo, inokuphumeza ukugaya ngokuzenzekelayo ngokupheleleyo kwe-single crystal silicon wafers "yomile ngaphakathi/yomile" kunye "nekhasethi kwikhasethi".

Ukugaya okumacala amabini:

Xa i-silicon wafer ejikelezayo icubungula iindawo eziphezulu nezisezantsi ze-silicon wafer, umsebenzi kufuneka ujikwe kwaye wenziwe ngamanyathelo, nto leyo ethintela ukusebenza kakuhle. Kwangaxeshanye, i-silicon wafer ejikelezayo i-silicon ine-surface error copy (ekopishiweyo) kunye ne-grinding marks (grinding mark), kwaye akunakwenzeka ukususa ngempumelelo iziphene ezifana ne-waviness kunye ne-taper kumphezulu we-single crystal silicon wafer emva kokusika ucingo (multi-saw), njengoko kubonisiwe kuMfanekiso 4. Ukuze koyiswe ezi ziphene zingasentla, iteknoloji yokugaya enamacala amabini (doublesidegrinding) yavela ngeminyaka yoo-1990, kwaye umgaqo wayo uboniswe kuMfanekiso 5. Ii-clamps zisasazwa ngokulinganayo kumacala omabini zibamba i-single crystal silicon wafer kwiringi yokugcina kwaye zijikeleza kancinci ziqhutywa yi-roller. Amavili amabini okugaya edayimani anomfanekiso wekomityi abekwe kumacala omabini e-single crystal silicon wafer. Ziqhutywa yi-air bearing electric spindle, zijikeleza kwicala elichaseneyo kwaye zondla nge-axial ukuze zifezekise ukugaywa kwamacala amabini kwe-single crystal silicon wafer. Njengoko kunokubonwa kumfanekiso, ukugaya okumacala mabini kunokususa ngokufanelekileyo ubungqindilili kunye nokuthamba kumphezulu we-single crystal silicon wafer emva kokusikwa kwentambo. Ngokwendlela yokulungiselela i-axis yevili lokusila, ukugaya okumacala mabini kunokuba ngokuthe tye nangokuthe nkqo. Phakathi kwazo, ukugaya okumacala mabini okuthe tye kunokunciphisa ngempumelelo impembelelo yokuguqulwa kwe-silicon wafer okubangelwa bubunzima obungaphelelanga be-silicon wafer kumgangatho wokusila, kwaye kulula ukuqinisekisa ukuba iimeko zenkqubo yokusila kumacala omabini e-single crystal silicon wafer ziyafana, kwaye amaqhekeza arhabaxa kunye neetships zokusila akulula ukuhlala kumphezulu we-single crystal silicon wafer. Yindlela yokusila efanelekileyo.

Umfanekiso 4, "Ikopi yeempazamo" kunye neziphene zophawu lokuguguleka ekugayweni kokujikeleza kwe-silicon wafer

Umfanekiso 5, umzobo wesicwangciso somgaqo wokusila omacala amabini

Itheyibhile 1 ibonisa uthelekiso phakathi kokusila kunye nokusila okumacala mabini kwezi ntlobo zintathu zingasentla ze-single crystal silicon wafers. Ukusila okumacala mabini kusetyenziswa ikakhulu ekucubungulweni kwe-silicon wafer ngaphantsi kwe-200mm, kwaye kunemveliso ephezulu ye-wafer. Ngenxa yokusetyenziswa kwamavili okusila aqinileyo, ukusila kwe-single-crystal silicon wafers kunokufumana umgangatho ophezulu kakhulu kunowokusila okumacala mabini. Ke ngoko, zombini i-silicon wafer rotary grinding kunye ne-double-side grinding zinokuhlangabezana neemfuno zomgangatho wokucubungula ze-300mm silicon wafers eziphambili, kwaye okwangoku zezona ndlela zibalulekileyo zokucubungula. Xa ukhetha indlela yokucubungula i-silicon wafer flattening, kuyimfuneko ukuqwalasela ngokupheleleyo iimfuno zobungakanani bobubanzi, umgangatho womphezulu, kunye netekhnoloji yokucubungula i-wafer yokupolisha ye-single-crystal silicon wafer. Ukuncitshiswa komqolo we-wafer kunokukhetha kuphela indlela yokucubungula emacala mabini, njengendlela yokugaya i-silicon wafer rotary.

Ukongeza ekukhetheni indlela yokusila kwi-silicon wafer grinding, kukwafuneka kuchongwe iiparameter zenkqubo ezifanelekileyo ezifana noxinzelelo oluhle, ubungakanani bengqolowa yevili lokusila, i-grinding wheel binder, isantya sevili lokusila, isantya se-silicon wafer, i-grinding fluid viscosity kunye nesantya sokuhamba, njl.njl., kwaye kuchongwe indlela yenkqubo efanelekileyo. Ngokwesiqhelo, inkqubo yokusila ehlukeneyo equka ukusila okurhabaxa, ukusila okuncinci, ukusila okugqityiweyo, ukusila okungenazintlantsi kunye nokubuya kancinci kuyasetyenziswa ukufumana ii-wafer ze-silicon zekristale enye ezinokusebenza kakuhle okuphezulu, ukuthamba okuphezulu kunye nomonakalo ophantsi womphezulu.