Kungani udinga ukuncipha?

Esigabeni senqubo ye-back-end, iisilucwecwana (isicwecwana se-siliconenamasekhethi ngaphambili) idinga ukuncishiswa ngemuva ngaphambi kokudayela okulandelayo, ukushisela kanye nokupakishwa ukuze kuncishiswe ukuphakama kwephakheji, kuncishiswe umthamo wephakheji ye-chip, kuthuthukiswe ukusebenza kahle kokusabalalisa okushisayo kwe-chip, ukusebenza kukagesi, izakhiwo zemishini kanye nokunciphisa inani lokudayela. Ukugaya emuva kunezinzuzo zokusebenza kahle okuphezulu kanye nezindleko eziphansi. Ithathe indawo yezinqubo zendabuko zokunamathisela okumanzi kanye ne-ion etching ukuze ibe ubuchwepheshe obubaluleke kakhulu bokunciphisa ingemuva.

I-wafer encane

Indlela yokunciphisa?

Inqubo eyinhloko yokuncipha kwe-wafer kunqubo yokupakisha yendabuko

Izinyathelo eziqondile zeisilucwecwanaUkunciphisa kuwukuhlanganisa i-wafer ukuze icutshungulwe kufilimu encishisiwe, bese usebenzisa i-vacuum ukukhangisa ifilimu encane ne-chip kuyo etafuleni le-wafer ye-ceramic enezimbobo, ukulungisa imigqa ephakathi nendawo eyindilinga yesikebhe yendawo yokusebenza yesondo lokugaya idayimane elimise okwenkomishi libe phakathi nendawo ye-wafer ye-silicon, kanye nesondo elijikelezayo lokugaya i-silicon. ukugaya-ngokugaya. Ukugaya kuhlanganisa izigaba ezintathu: ukugaya kanzima, ukugaya kanye nokupholisha.

I-wafer ephuma efekthri ye-wafer igaya emuva ukuze ibe mncane i-wafer ibe ugqinsi oludingekayo ukuze ifakwe. Uma ugaya i-wafer, i-tape idinga ukusetshenziswa ngaphambili (Indawo Esebenzayo) ukuvikela indawo yesifunda, futhi uhlangothi olungemuva lugaywe ngesikhathi esifanayo. Ngemuva kokugaya, susa i-tape futhi ulinganise ubukhulu.
Izinqubo zokugaya ezisetshenziswe ngempumelelo ekulungiseleleni i-silicon wafer zihlanganisa ukugaya itafula elijikelezayo,isicwecwana se-siliconukugaya okujikelezayo, ukugaya okuhlangene kabili, njll Ngokuthuthukiswa okuqhubekayo kwezidingo zekhwalithi ephezulu yezinhlayiya ze-crystal silicon eyodwa, ubuchwepheshe obusha bokugaya buhlala buhlongozwa njalo, njengokugaya kwe-TAIKO, ukugaya ngamakhemikhali, ukugaya kanye nokugaya i-disc yeplanethi.

Ukugaya ithebula elijikelezayo:

Ukugaya itafula elijikelezayo (ukugaya ithebula elijikelezayo) kuyinqubo yokugaya yangaphambi kwesikhathi esetshenziswa ekulungiseleleni isicwecwana se-silicon kanye nokwelula iqolo. Umgomo wawo uboniswa kuMfanekiso 1. Amawafa e-silicon agxilile ezinkomishini zokumunca zetafula elizungezayo, futhi azungezisa ngokuhambisanayo ashayelwa itafula elizungezayo. Ama-silicon wafers ngokwawo awazungezi eksisi yawo; isondo lokugaya liphakelwa i-axially ngenkathi lijikeleza ngesivinini esikhulu, futhi ububanzi besondo lokugaya bukhulu kunobubanzi be-silicon wafer. Kunezinhlobo ezimbili zokugaya itafula elijikelezayo: ukugaya ubuso nokugaya ubuso be-tangential. Ekugayweni kobuso, ububanzi besondo lokugaya bukhulu kunobubanzi be-silicon wafer, futhi isondo lokugaya lokuphotha liphakela ngokuqhubekayo ngendlela ye-axial kuze kube yilapho sekucutshungulwa okweqile, bese iwafa ye-silicon ijikeleziswa ngaphansi kokushayela kwetafula elijikelezayo; ebusweni be-tangential grinding, isondo lokugaya liphakela ohlangothini lwalo lwe-axial, futhi i-wafer ye-silicon ijikeleziswa ngokuqhubekayo ngaphansi kwedrayivu yediski ezungezayo, futhi ukugaya kuqedwa ngokuphakelana okubili (ukubuyiselana) noma ukuphakela ngokukhasa (creepfeed).

Umfanekiso 1, umdwebo wohlelo lwesimiso sokugaya ithebula elijikelezayo (i-face tangential) isimiso

Uma kuqhathaniswa nendlela yokugaya, ukugaya ithebula elijikelezayo kunenzuzo yezinga eliphezulu lokususa, ukulimala okuncane kwendawo, kanye ne-automation elula. Kodwa-ke, indawo yokugaya yangempela (ukugaya okusebenzayo) B kanye ne-engeli yokusika engu-θ (i-engeli ephakathi kwendilinga yangaphandle yesondo lokugaya kanye nendilinga yangaphandle yesinkwa esicwecwana se-silicon) ekushintsheni kwenqubo yokugaya ngokushintsha indawo yokusika yesondo lokugaya, okuholela kumandla okugaya angazinzile, okwenza kube nzima ukuthola ukunemba okuphezulu kwe-Tdge kanye ne-cool defectllacy (i-cool Tv) ukugoqa komphetho. Ubuchwepheshe bokugaya itafula elijikelezayo busetshenziselwa ikakhulukazi ukucubungula amawafa e-silicon e-crystal eyodwa angaphansi kuka-200mm. Ukwenyuka kosayizi wamawafa e-silicon e-crystal eyodwa kubeke phambili izidingo eziphakeme zokunemba kobuso kanye nokunemba kokunyakaza kwebhentshi lokusebenza lemishini, ngakho-ke ukugaya kwetafula okujikelezayo akufanelekile ukugaywa kwamawafa e-silicon e-crystal-crystal angaphezu kuka-300mm.
Ukuze kuthuthukiswe ukusebenza kahle kokugaya, imishini yokugaya indiza yezentengiselwano ngokuvamile isebenzisa ukwakheka kwamasondo okugaya okuningi. Ngokwesibonelo, isethi yamasondo okugaya amasondo nesethi yamasondo acolekileyo afakwe emishinini, futhi itafula elijikelezayo lizungeza indilinga eyodwa ukuze liqedele ukugaywa nokugaya kahle ngokulandelana. Lolu hlobo lwesisetshenziswa luhlanganisa i-G-500DS yeNkampani ye-GTI yaseMelika (Umfanekiso 2).

Umfanekiso 2, G-500DS imishini yokugaya itafula ejikelezayo yeNkampani ye-GTI e-United States

Ukugaya i-Silicon wafer rotation:

Ukuze kuhlangatshezwane nezidingo zokulungiswa kwe-wafer ye-silicon yosayizi omkhulu kanye nokucutshungulwa kokunciphisa emuva, nokuthola ukunemba kwendawo enevelu elihle le-TTV. Ngo-1988, isazi saseJapane uMatsui saphakamisa indlela yokugaya i-silicon wafer rotation (in-feedgrinding). Umgomo wawo ukhonjiswe kuMfanekiso 3. Isicwecwana esiyikristalu se-silicon kanye nesondo lokugaya idayimane elimise okwenkomishi elibekwe ebhentshini lokusebenzela lizungeza izimbazo zazo, futhi isondo lokugaya lilokhu liphakelwa ngendlela ye-axial ngasikhathi sinye. Phakathi kwazo, ububanzi besondo lokugaya bukhulu kunobubanzi be-silicon wafer egayiwe, futhi umjikelezo wayo udlula phakathi nendawo yesinkwa se-silicon. Ukuze kuncishiswe amandla okugaya futhi kuncishiswe ukushisa okugaya, inkomishi yokumunca i-vacuum ivamise ukusikwa ibe umumo oyi-convex noma i-concave noma i-engeli ephakathi kwesondo lokuphotha isondo lokudonsa kanye ne-axis yokuphotha yenkomishi yokumunca iyalungiswa ukuze kuqinisekiswe ukugaya okuthinta kancane phakathi kwesondo lokugaya kanye ne-silicon wafer.

Umfanekiso 3, Umdwebo weSchematic wesimiso sokugaya i-silicon wafer rotary

Uma kuqhathaniswa nokugaya itafula elijikelezayo, ukugaya okuyisicwecwana se-silicon kunezinzuzo ezilandelayo: ① Ukugaya kwe-wafer eyodwa ngesikhathi esisodwa kungacubungula amawafa e-silicon anosayizi omkhulu ngaphezu kuka-300mm; ② Indawo yokugaya yangempela B kanye ne-engeli yokusika θ ayishintshi, futhi amandla okugaya azinzile; ③ Ngokulungisa i-engeli yokuthambekela phakathi kwe-axis yesondo lokugaya kanye ne-silicon wafer axis, umumo ongaphezulu we-crystal silicon wafer eyodwa ungalawulwa ngokuqhubekayo ukuze kutholwe ukunemba okungcono komumo wendawo. Ngaphezu kwalokho, indawo yokugaya kanye ne-engeli yokusika θ ye-silicon wafer rotary grinding nayo inezinzuzo zokugaya i-margin enkulu, ukujiya okulula kwe-inthanethi nokutholwa nokulawula ikhwalithi yendawo, ukwakheka kwemishini ehlangene, ukugaya okulula okuhlanganisiwe kweziteshi eziningi, nokusebenza kahle kokugaya okuphezulu.
Ukuze kuthuthukiswe ukusebenza kahle kokukhiqiza futhi kuhlangatshezwane nezidingo zemigqa yokukhiqiza ye-semiconductor, okokusebenza kokugaya okudayiswayo okusekelwe kumgomo we-silicon wafer rotary grinding kusebenzisa ukwakheka kweziteshi eziningi zokuphotha eziningi, okungaqedela ukugaya okumahhadlahhadla nokugaya kahle ekulayisheni nasekuthululeni okukodwa. Ihlanganiswe nezinye izakhiwo ezisizayo, ingabona ukugaywa okuzenzakalelayo kwamawafa e-crystal crystal "dry-in/dry-out" kanye "nekhasethi kuya kwikhasethi".

Ukugaya okukabili:

Lapho i-silicon wafer rotary grinding icubungula izindawo ezingaphezulu neziphansi ze-silicon wafer, isiqeshana sokusebenza sidinga ukuphendulwa futhi senziwe ngezinyathelo, ezikhawulela ukusebenza kahle. Ngesikhathi esifanayo, ukugaya okujikelezayo kwe-silicon wafer kunephutha lokukopisha (okukopishiwe) kanye namamaki okugaya (i-grindingmark), futhi akunakwenzeka ukususa ngokuphumelelayo iziphambeko ezinjengama-waviness kanye ne-taper ebusweni be-crystal silicon wafer eyodwa ngemva kokusika ucingo (ama-multi-saw), njengoba kuboniswe kuMfanekiso 4. 1990s, futhi umgomo wawo ukhonjiswe kuMfanekiso 5. Izinsimbi ezixhunywe ngokulingana ezisatshalaliswe ngokulinganayo nhlangothi zombili zibopha iwafa ye-silicon eyodwa eyikristalu eringini ebambayo futhi izungezise kancane ishayelwa irola. Ipheya lamasondo okugaya idayimane amise okwenkomishi atholakala nhlangothi zombili ze-single crystal silicon wafer. Iqhutshwa umoya ophotha ugesi ophethe ugesi, izungeza izinhlangothi eziphambene futhi idla i-axially ukuze ithole ukugaya okukabili kwe-single crystal silicon wafer. Njengoba kungabonwa emfanekisweni, ukugaya okunezinhlangothi ezimbili kungasusa ngempumelelo i-waviness kanye ne-taper ebusweni be-crystal silicon wafer eyodwa ngemva kokusika ucingo. Ngokulandela isiqondiso se-axis yesondo lokugaya, ukugaya okunezinhlangothi ezimbili kungaba okuvundlile futhi kume mpo. Phakathi kwazo, ukugaya okuvundlile okunezinhlangothi ezimbili kunganciphisa ngempumelelo ithonya le-silicon wafer deformation okubangelwa isisindo esifile se-wafer ye-silicon kwikhwalithi yokugaya, futhi kulula ukuqinisekisa ukuthi izimo zenqubo yokugaya ezinhlangothini zombili ze-crystal silicon wafer eyodwa ziyafana, futhi izinhlayiya ezilimazayo nama-chips okugaya akulula ukuhlala phezu kwe-silicon yafer eyodwa. Kuyindlela ekahle yokugaya.

Umfanekiso 4, "Kopisha iphutha" futhi ugqoke amaphutha ekugayeni kwe-silicon wafer rotation

Umfanekiso 5, umdwebo wohlelo lwesimiso sokugaya esinezinhlangothi ezimbili

Ithebula 1 libonisa ukuqhathanisa phakathi kokugaya kanye nokugaya okukabili kwezinhlobo ezintathu ezingenhla zamawafa e-crystal silicon eyodwa. Ukugaya okunezinhlangothi ezimbili kusetshenziselwa ikakhulukazi ukucubungula i-silicon wafer ngaphansi kuka-200mm, futhi kunesivuno esiphezulu se-wafer. Ngenxa yokusetshenziswa kwamasondo okugaya abrasive agxilile, ukugaywa kwamawafa e-silicon eyodwa kungathola ikhwalithi ephezulu kakhulu kunaleyo yokugaya okukabili. Ngakho-ke, kokubili ukugaya kwe-silicon wafer rotary nokugaya okunezinhlangothi ezimbili kungahlangabezana nezidingo zekhwalithi yokucubungula yamawafa e-silicon ajwayelekile angu-300mm, futhi okwamanje kuyizindlela zokucubungula ezibaluleke kakhulu zokuthambisa. Lapho ukhetha indlela yokucubungula isicwecwana se-silicon, kuyadingeka ukuthi ucubungule ngokujulile izidingo zosayizi wobubanzi, ikhwalithi yendawo ephezulu, kanye nobuchwepheshe bokucubungula i-wafer yokupholisha ye-single-crystal silicon wafer. Ukucwenga ngemuva kwewafa kungakhetha kuphela indlela yokucubungula yohlangothi olulodwa, njengendlela yokugaya eyi-silicon wafer rotary.

Ngokungeziwe ekukhetheni indlela yokugaya ekugayweni kwe-silicon wafer, kuyadingeka futhi ukunquma ukukhethwa kwemingcele yenqubo enengqondo njengokucindezela okuhle, usayizi wokusanhlamvu wesondo lokugaya, i-wheel binder yokugaya, isivinini sesondo lokugaya, isivinini se-silicon wafer, i-viscosity yokugaya uketshezi kanye nesilinganiso sokugeleza, njll., futhi unqume umzila wenqubo ozwakalayo. Ngokuvamile, inqubo yokugaya ehlukene ehlanganisa ukugaya okuqinile, ukugaya kancane kancane, ukuqeda ukugaya, ukugaya okungenanhlansi kanye nokusekelwa kancane kusetshenziselwa ukuthola ama-wafer e-crystal silicon eyodwa asebenza kahle kakhulu, ukuvuleka okuphezulu kwendawo kanye nokulimala okuphansi kwendawo.