Kungani kudingeka ukunciphisa umzimba?

Esigabeni senqubo yokuphela kwe-back-end,i-wafer (i-silicon wafer(ngemijikelezo engaphambili) kudingeka incishiswe ngemuva ngaphambi kokusikwa, ukushisela kanye nokupakishwa okulandelayo ukuze kuncishiswe ukuphakama kokusikwa kwephakheji, kuncishiswe ivolumu yephakheji ye-chip, kuthuthukiswe ukusebenza kahle kokusabalala kokushisa kwe-chip, ukusebenza kukagesi, izakhiwo zemishini futhi kuncishiswe inani lokusikwa. Ukugaya ngemuva kunezinzuzo zokusebenza kahle kakhulu kanye nezindleko eziphansi. Kuthathe indawo yezinqubo zendabuko zokusikwa okumanzi kanye nokusikwa kwe-ion ukuze kube ubuchwepheshe obubaluleke kakhulu bokunciphisa emuva.

I-wafer encane

Unganciphisa kanjani isisindo?

Inqubo eyinhloko yokunciphisa i-wafer enkambisweni yokupakisha yendabuko

Izinyathelo ezithile zei-waferUkunciphisa kufanele kuhlanganiswe i-wafer ukuze icutshungulwe kwifilimu yokunciphisa, bese kusetshenziswa i-vacuum ukunamathisela ifilimu yokunciphisa kanye ne-chip ekuyo etafuleni le-wafer le-ceramic elinezimbobo, kulungiswe imigqa ephakathi nengaphakathi yesikebhe esiyindilinga yendawo yokusebenza yesondo lokugaya ledayimane elimise okwendebe phakathi kwe-wafer ye-silicon, bese i-wafer ye-silicon kanye nesondo lokugaya kuzungeza izimbazo zazo ukuze kugaywe. Ukugaya kuhlanganisa izigaba ezintathu: ukugaya okuqinile, ukugaya okuncane kanye nokupholisha.

I-wafer ephuma efektri ye-wafer iyagaywa ngemuva ukuze inciphise i-wafer ibe ugqinsi oludingekayo ekupakisheni. Uma ugaywa i-wafer, itheyiphu idinga ukufakwa ngaphambili (Indawo Esebenzayo) ukuze kuvikelwe indawo yesekethe, kanti uhlangothi olungemuva lugaywe ngesikhathi esifanayo. Ngemva kokugaya, susa itheyiphu bese ulinganisa ugqinsi.
Izinqubo zokugaya ezisetshenziswe ngempumelelo ekulungiseleleni i-silicon wafer zifaka phakathi ukugaya itafula elijikelezayo,i-silicon waferukugaya ngokujikeleza, ukugaya okunezinhlangothi ezimbili, njll. Ngokuthuthuka okuqhubekayo kwezidingo zekhwalithi ephezulu yama-wafer e-silicon angama-crystal angenasici, ubuchwepheshe obusha bokugaya buphakanyiswa njalo, njengokugaya i-TAIKO, ukugaya ngomshini wamakhemikhali, ukugaya ngokupholisha kanye nokugaya nge-planetary disc.

Ukugaya itafula elijikelezayo:

Ukugaya itafula elijikelezayo (ukugaya itafula elijikelezayo) inqubo yokugaya yokuqala esetshenziswa ekulungiseleleni i-silicon wafer kanye nokunciphisa umhlane. Isimiso sayo siboniswe kuMfanekiso 1. Ama-silicon wafer anamathele ezinkomishini zokumunca zetafula elijikelezayo, futhi ajikeleza ngokuhambisanayo aqhutshwa yitafula elijikelezayo. Ama-silicon wafer ngokwawo awajikelezi nxazonke zawo; isondo lokugaya liphakelwa nge-axial ngenkathi lijikeleza ngesivinini esikhulu, futhi ububanzi besondo lokugaya bukhulu kunobubanzi be-silicon wafer. Kunezinhlobo ezimbili zokugaya itafula elijikelezayo: ukugaya ubuso kanye nokugaya ubuso. Ekugayeni ubuso, ububanzi besondo lokugaya bukhulu kunobubanzi be-silicon wafer, kanti i-spindle yesondo lokugaya iphakelwa njalo eceleni kwe-axial kuze kube yilapho okungaphezulu kucutshungulwa, bese i-silicon wafer ijikeleziswa ngaphansi kwe-drive yetafula elijikelezayo; ekugayeni ubuso, isondo lokugaya liphakelwa eceleni kwe-axial, kanti i-silicon wafer ijikeleziswa njalo ngaphansi kwe-drive yediski elijikelezayo, futhi ukugaya kuqedwa ngokuphakelwa okuphindaphindayo (ukuphindaphinda) noma ukuphakelwa okwandayo (ukudla okwandayo).

Umfanekiso 1, umdwebo wesimiso sokugaya itafula elijikelezayo (ubuso obuthambile)

Uma kuqhathaniswa nendlela yokugaya, ukugaya itafula elijikelezayo kunezinzuzo zesilinganiso sokususa esiphezulu, umonakalo omncane womphezulu, kanye nokwenza izinto ngokuzenzakalela okulula. Kodwa-ke, indawo yokugaya yangempela (ukugaya okusebenzayo) B kanye ne-engeli yokusika θ (i-engeli ephakathi kwendilinga yangaphandle yesondo lokugaya kanye nendilinga yangaphandle ye-silicon wafer) enkambisweni yokugaya iyashintsha ngokushintsha kwesimo sokusika sesondo lokugaya, okuholela emandleni okugaya angazinzile, okwenza kube nzima ukuthola ukunemba kobuso obufanele (inani eliphezulu le-TTV), futhi kubangele kalula amaphutha njengokuwa komphetho kanye nokuwa komphetho. Ubuchwepheshe bokugaya itafula elijikelezayo busetshenziswa kakhulu ekucubungulweni kwama-wafer e-silicon e-single-crystal angaphansi kuka-200mm. Ukwanda kosayizi wama-wafer e-silicon e-single-crystal kubeke phambili izidingo eziphakeme zokunemba kobuso kanye nokunemba kokunyakaza kwebhentshi lokusebenza lemishini, ngakho-ke ukugaya itafula elijikelezayo akufaneleki ukugaya ama-wafer e-silicon e-single-crystal angaphezu kuka-300mm.
Ukuze kuthuthukiswe ukusebenza kahle kokugaya, imishini yokugaya yendiza yezentengiselwano ivame ukusebenzisa isakhiwo samasondo okugaya amaningi. Isibonelo, isethi yamasondo okugaya angaqinile kanye nesethi yamasondo okugaya amahle ifakwe emishinini, futhi itafula elijikelezayo lijikeleza indilinga eyodwa ukuze kuqedwe ukugaya okungaqinile kanye nokugaya okuhle ngokulandelana. Lolu hlobo lwemishini luhlanganisa i-G-500DS yeNkampani yaseMelika i-GTI (Isithombe 2).

Umfanekiso 2, imishini yokugaya itafula elijikelezayo le-G-500DS leNkampani ye-GTI e-United States

Ukugaya ukujikeleza kwe-silicon wafer:

Ukuze kuhlangatshezwane nezidingo zokulungiswa kwe-silicon wafer enkulu kanye nokucubungula ukusika emuva, futhi kutholakale ukunemba kobuso ngenani elihle le-TTV. Ngo-1988, isazi saseJapan uMatsui saphakamisa indlela yokugaya ngokujikeleza i-silicon wafer (in-feedgrinding). Isimiso sayo siboniswe kuMfanekiso 3. I-wafer eyodwa ye-silicon yekristalu kanye nesondo lokugaya ledayimane elinomumo wendebe elifakwe ebhentshini lokusebenzela lijikeleza nxazonke zama-axes alo, futhi isondo lokugaya lihlala liphakelwa ngendlela ye-axial ngasikhathi sinye. Phakathi kwazo, ububanzi besondo lokugaya bukhulu kunobubanzi be-wafer ye-silicon ecutshunguliwe, futhi umjikelezo walo udlula phakathi kwe-wafer ye-silicon. Ukuze kuncishiswe amandla okugaya futhi kuncishiswe ukushisa kokugaya, indebe yokumunca i-vacuum ivame ukunqunywa ibe yisimo se-convex noma se-concave noma i-engeli ephakathi kwe-spindle yesondo lokugaya kanye ne-axis ye-spindle yendebe yokumunca ilungiswa ukuqinisekisa ukugaya okuphakathi phakathi kwesondo lokugaya kanye ne-wafer ye-silicon.

Umfanekiso 3, Umdwebo weskimu womgomo wokugaya ojikelezayo we-silicon wafer

Uma kuqhathaniswa nokugaya itafula elijikelezayo, ukugaya okujikelezayo kwe-silicon wafer kunezinzuzo ezilandelayo: ① Ukugaya okukodwa kwe-single-wafer kungacubungula ama-silicon wafer amakhulu angaphezu kuka-300mm; ② Indawo yokugaya yangempela B kanye ne-cutting angle θ kuyaguquguquka, futhi amandla okugaya azinzile; ③ Ngokulungisa i-angle yokuthambekela phakathi kwe-axis yesondo lokugaya kanye ne-silicon wafer axis, ukuma kobuso be-single crystal silicon wafer kungalawulwa ngenkuthalo ukuze kutholakale ukunemba okungcono kokwakheka kobuso. Ngaphezu kwalokho, indawo yokugaya kanye ne-cutting angle θ yokugaya okujikelezayo kwe-silicon wafer nakho kunezinzuzo zokugaya okukhulu, ukujiya okulula kwe-inthanethi kanye nokutholwa nokulawulwa kwekhwalithi yobuso, isakhiwo semishini ehlanganisiwe, ukugaya okulula okuhlanganisiwe kweziteshi eziningi, kanye nokusebenza kahle kokugaya okuphezulu.
Ukuze kuthuthukiswe ukusebenza kahle kokukhiqiza futhi kuhlangatshezwane nezidingo zemigqa yokukhiqiza ye-semiconductor, imishini yokugaya yezentengiselwano esekelwe esimisweni sokugaya okujikelezayo kwe-silicon wafer isebenzisa isakhiwo seziteshi eziningi esine-spindle, esingaqedela ukugaya okuqinile kanye nokugaya okuncane ekulayisheni nasekulayisheni okukodwa. Uma ihlanganiswe nezinye izikhungo ezisizayo, ingafeza ukugaya okuzenzakalelayo ngokuphelele kwama-wafer e-silicon angama-crystal "omile ngaphakathi/omile" kanye "nekhasethi kuya ekhasethini".

Ukugaya okunezinhlangothi ezimbili:

Lapho ukugaya okujikelezayo kwe-silicon wafer kucubungula izindawo eziphezulu nezingezansi ze-silicon wafer, umsebenzi kufanele uguqulwe futhi wenziwe ngezinyathelo, okunciphisa ukusebenza kahle. Ngesikhathi esifanayo, ukugaya okujikelezayo kwe-silicon wafer kunezimpawu zokukopisha (ezikopishiwe) kanye nokugaya (uphawu lokugaya), futhi akunakwenzeka ukususa ngempumelelo amaphutha anjengokugoba kanye nokuthamba ebusweni be-single crystal silicon wafer ngemva kokusika ucingo (multi-saw), njengoba kuboniswe kuMfanekiso 4. Ukuze kunqotshwe amaphutha angenhla, ubuchwepheshe bokugaya obunezinhlangothi ezimbili (doublesidegrinding) bavela ngawo-1990, futhi isimiso sabo siboniswe kuMfanekiso 5. Ama-clamp asatshalaliswa ngokulinganayo kuzo zombili izinhlangothi abambe i-single crystal silicon wafer endandatho yokugcina futhi ajikeleze kancane eqhutshwa yi-roller. Amasondo amabili okugaya edayimane anomumo wendebe atholakala cishe kuzo zombili izinhlangothi ze-single crystal silicon wafer. Aqhutshwa yi-spindle kagesi ephethe umoya, ajikeleza ngezindlela eziphambene futhi ondle nge-axial ukuze afinyelele ukugaya okunezinhlangothi ezimbili kwe-single crystal silicon wafer. Njengoba kungabonakala esithombeni, ukugaya okunezinhlangothi ezimbili kungasusa ngempumelelo ukujiya kanye nokuncipha ebusweni be-single crystal silicon wafer ngemva kokusikwa kwentambo. Ngokwendlela yokuhlelwa kwe-axis yesondo lokugaya, ukugaya okunezinhlangothi ezimbili kungaba okuvundlile nokuqondile. Phakathi kwazo, ukugaya okunezinhlangothi ezimbili okuvundlile kunganciphisa ngempumelelo ithonya lokuguqulwa kwe-silicon wafer okubangelwa isisindo esifile se-silicon wafer ekhwalithini yokugaya, futhi kulula ukuqinisekisa ukuthi izimo zenqubo yokugaya ezinhlangothini zombili ze-single crystal silicon wafer ziyafana, futhi izinhlayiya ezibuhlungu kanye nama-chips okugaya akulula ukuhlala ebusweni be-single crystal silicon wafer. Kuyindlela yokugaya efanelekile.

Umfanekiso 4, "Ikhophi yephutha" kanye namaphutha ophawu lokuguguleka ekugayeni kokujikeleza kwe-silicon wafer

Umfanekiso 5, umdwebo wesimiso sokugaya ozinhlangothi zombili

Ithebula 1 libonisa ukuqhathanisa phakathi kokugaya nokugaya okunezinhlangothi ezimbili kwezinhlobo ezintathu ezingenhla zama-wafer e-silicon angama-single crystal. Ukugaya okunezinhlangothi ezimbili kusetshenziselwa kakhulu ukucubungula i-wafer ye-silicon ngaphansi kwama-200mm, futhi kunesivuno esikhulu se-wafer. Ngenxa yokusebenzisa amasondo okugaya aqinile, ukugaya ama-wafer e-silicon angama-single-crystal kungathola ikhwalithi ephezulu kakhulu kunokugaya okunezinhlangothi ezimbili. Ngakho-ke, kokubili ukugaya okujikelezayo kwe-silicon wafer kanye nokugaya okunezinhlangothi ezimbili kungahlangabezana nezidingo zekhwalithi yokucubungula zama-wafer e-silicon angama-300mm ajwayelekile, futhi njengamanje kuyizindlela ezibaluleke kakhulu zokucubungula okuthambile. Lapho ukhetha indlela yokucubungula i-wafer ye-silicon, kubalulekile ukucabangela ngokuphelele izidingo zobukhulu bobubanzi, ikhwalithi yobuso, kanye nobuchwepheshe bokucubungula i-wafer yokupholisha ye-wafer ye-single-crystal silicon. Ukunciphisa ngemuva kwe-wafer kungakhetha kuphela indlela yokucubungula enohlangothi olulodwa, njengendlela yokugaya i-wafer ye-silicon wafer.

Ngaphezu kokukhetha indlela yokugaya ekugayeni i-silicon wafer, kuyadingeka futhi ukunquma ukukhethwa kwamapharamitha enqubo afanele njengokucindezela okuhle, usayizi we-grinding wheel grain, i-grinding wheel binder, isivinini se-grinding wheel, isivinini se-silicon wafer, i-grinding fluid viscosity kanye ne-flow rate, njll., bese kunqunywa umzila wenqubo ofanele. Ngokuvamile, inqubo yokugaya ehlukaniswe ngezigaba ehlanganisa ukugaya okungaqinile, ukugaya okuqediwe kancane, ukugaya kokuqeda, ukugaya okungenanhlansi kanye nokubuyela emuva kancane isetshenziselwa ukuthola ama-single crystal silicon wafers anokusebenza kahle kokucubungula, ukuthamba okuphezulu kobuso kanye nomonakalo ophansi wobuso.