Maganin wafer mai rufin TaC don G5 G10

An ƙera na'urar hana ruwa ta CVD tantalum carbide (TaC) mai rufi da kanta ta VET Energy don yanayi mai wahala kamar kera semiconductor, haɓakar wafer na LED epitaxial (MOCVD), tanderun girma na kristal, maganin zafi mai zafi mai zafi, da sauransu. Ta hanyar fasahar adana tururin sinadarai (CVD), an samar da wani rufin tantalum carbide mai yawa da iri ɗaya a saman graphite substrate, wanda ke ba da kwanciyar hankali mai zafi sosai (>3000℃), juriya ga tsatsa na ƙarfe da aka narke, juriya ga girgizar zafi da ƙarancin gurɓatawa, wanda hakan ke tsawaita rayuwar sabis sosai.

Fa'idodin fasaha namu:
1. Daidaiton zafin jiki mai matuƙar yawa.
Wurin Narkewa na 3880°C: Rufin Tantalum carbide zai iya aiki akai-akai kuma cikin kwanciyar hankali sama da 2500°C, wanda ya wuce zafin bazuwar 1200-1400°C na rufin silicon carbide na gargajiya (SiC).
Juriyar girgizar zafi: Ma'aunin faɗaɗa zafi na murfin ya yi daidai da na substrate na graphite (6.6×10 -6/K), kuma yana iya jure saurin hawan zafin jiki da zagayowar faɗuwa tare da bambancin zafin jiki sama da 1000°C don guje wa fashewa ko faɗuwa.
Halayen injina masu zafi sosai: Taurin rufin ya kai 2000 HK (taurin Vickers) kuma tsarin roba shine 537 GPa, kuma har yanzu yana riƙe da ƙarfin tsari mai kyau a yanayin zafi mai yawa.

2. Tsaftacewa sosai don tabbatar da tsarkin tsari
Kyakkyawan juriya: Yana da kyakkyawan juriya ga iskar gas mai lalata kamar H₂, NH₃, SiH₄, HCl da ƙarfe mai narkewa (misali Si, Ga), yana ware substrate na graphite gaba ɗaya daga yanayin amsawa kuma yana guje wa gurɓatar carbon.
Ƙarfin ƙaura mara ƙazanta: tsantsar da ba ta da kyau, yadda ya kamata ta hana ƙaurar nitrogen, oxygen da sauran ƙazanta zuwa ga lu'ulu'u ko kuma epitaxial Layer, rage ƙimar lahani na microtubes da fiye da 50%.

3. Daidaiton matakin Nano don inganta daidaiton tsari
Daidaiton shafi: haƙurin kauri ≤ ± 5%, madaidaicin saman ya kai matakin nanometer, yana tabbatar da daidaiton sigogin girma na wafer ko lu'ulu'u, kuskuren daidaiton zafi <1%.
Daidaiton girma: yana goyan bayan keɓancewa na haƙuri na ±0.05mm, yana daidaitawa zuwa wafers na inci 4 zuwa inci 12, kuma yana biyan buƙatun hanyoyin haɗin kayan aiki masu inganci.

4. Yana da ɗorewa kuma yana da ɗorewa, yana rage farashi gaba ɗaya
Ƙarfin ɗaurewa: Ƙarfin ɗaurewa tsakanin murfin da kuma ɓangaren graphite shine ≥5 MPa, yana da juriya ga zaizayar ƙasa da lalacewa, kuma tsawon lokacin sabis ɗin yana ƙaruwa da fiye da sau 3.

Yarjejeniyar Inji
Ya dace da kayan aikin ci gaban epitaxial da lu'ulu'u kamar CVD, MOCVD, ALD, LPE, da sauransu, waɗanda suka shafi ci gaban lu'ulu'u na SiC (hanyar PVT), GaN epitaxy, shirye-shiryen substrate na AlN da sauran yanayi.
Muna samar da nau'ikan siffofi daban-daban na susceptor kamar lebur, concave, convex, da sauransu. Ana iya daidaita kauri (5-50mm) da tsarin ramin da aka sanya bisa ga tsarin ramin don cimma daidaiton da ke tsakanin kayan aiki.

Babban Aikace-aikace:
Girman lu'ulu'u na SiC: A cikin hanyar PVT, rufin zai iya inganta rarraba filin zafi, rage lahani a gefen, da kuma ƙara ingantaccen yankin girma na lu'ulu'u zuwa fiye da 95%.
GaN epitaxy: A cikin tsarin MOCVD, kuskuren daidaiton yanayin zafi na susceptor shine <1%, kuma daidaiton kauri na Layer epitaxial ya kai ±2%.
Shirye-shiryen substrate na AlN: A cikin yanayin zafi mai yawa (>2000°C), rufin TaC zai iya ware substrate ɗin graphite gaba ɗaya, guje wa gurɓatar carbon, da kuma inganta tsarkin lu'ulu'u na AlN.