Wafer susceptor tare da TaC shafi na G5 G10

VET Energy ta da kansa ɓullo da CVD tantalum carbide (TaC) shafi wafer susceptor aka tsara don matsananci aiki yanayi kamar semiconductor masana'antu, LED epitaxial wafer girma (MOCVD), crystal girma makera, high-zazzabi injin zafi magani, da dai sauransu Ta hanyar sinadaran tururi jijiya (CVD) fasaha, wani m da kuma shafi da aka kafa a kan subconductor tantalum tantalum, wani m da kuma shafi da aka kafa tantalum da surface tantalum. matsananci-high zafin jiki kwanciyar hankali (> 3000 ℃), juriya ga narkakkar karfe lalata, thermal girgiza juriya da low gurbatawa halaye, muhimmanci mika rayuwar sabis.

Fa'idodin fasahar mu:
1. Ultra-high zazzabi kwanciyar hankali.
3880°C Narkewa Point: Tantalum carbide shafi na iya aiki ci gaba da tsayayye sama da 2500°C, da nisa ya wuce 1200-1400°C bazuwar zafin jiki na al'ada silicon carbide (SiC).
Thermal girgiza juriya: The thermal fadada coefficient na shafi matches na graphite substrate (6.6 × 10 -6 / K), kuma zai iya jure m zafin jiki tashi da faɗuwar hawan keke tare da zazzabi bambanci fiye da 1000 ° C don kauce wa fatattaka ko fadowa kashe.
High zafin jiki inji Properties: Rufe taurin kai 2000 HK (Vickers taurin) da na roba modulus ne 537 GPa, kuma shi har yanzu yana kula da kyakkyawan tsarin ƙarfi a high yanayin zafi.

2. Matsanancin lalata-resistant don tabbatar da tsaftataccen tsari
Kyakkyawan juriya: Yana da kyakkyawan juriya ga iskar iskar gas kamar H₂, NH₃, SiH₄, HCl da narkakken karafa (misali Si, Ga), gabaɗaya keɓance madaidaicin graphite daga yanayin mai amsawa da guje wa gurɓataccen carbon.
Ƙananan ƙaura mai ƙazanta: tsaftataccen tsafta, yadda ya kamata ya hana ƙaura na nitrogen, oxygen da sauran ƙazanta zuwa kristal ko epitaxial Layer, yana rage lahani na microtubes da fiye da 50%.

3. Madaidaicin matakin Nano don inganta daidaiton tsari
Rufe uniformity: kauri haƙuri ≤± 5%, surface flatness kai nanometer matakin, tabbatar da high daidaito na wafer ko crystal girma sigogi, thermal uniformity kuskure <1%.
Daidaitaccen ma'auni: yana goyan bayan gyare-gyaren haƙuri na ± 0.05mm, yana daidaitawa zuwa 4-inch zuwa 12-inch wafers, kuma ya dace da buƙatun musaya na kayan aiki masu inganci.

4. Dorewa da dorewa, rage yawan farashi
Ƙarfin haɗin gwiwa: Ƙarfin haɗin gwiwa tsakanin shafi da graphite substrate shine ≥5 MPa, mai jure wa yashewa da lalacewa, kuma an ƙara rayuwar sabis fiye da sau 3.

Dacewar inji
Ya dace da al'ada epitaxial da crystal girma kayan aiki kamar CVD, MOCVD, ALD, LPE, da dai sauransu, rufe SiC crystal girma (PVT hanya), GaN epitaxy, AlN substrate shirye-shirye da sauran al'amura.
Muna samar da nau'i-nau'i na nau'i-nau'i irin su lebur, concave, convex, da dai sauransu. Za'a iya daidaita kauri (5-50mm) da shimfidar ramin ramuka bisa ga tsarin rami don cimma daidaituwa mara kyau tare da kayan aiki.

Manyan Aikace-aikace:
SiC crystal girma: A cikin hanyar PVT, shafi na iya inganta rarraba filin zafi, rage lahani na gefe, da kuma ƙara ingantaccen girma na kristal zuwa fiye da 95%.
GaN epitaxy: A cikin tsarin MOCVD, kuskuren daidaituwa na thermal shine <1%, kuma daidaiton kauri na epitaxial ya kai ± 2%.
Shirye-shiryen substrate na AlN: A cikin babban zafin jiki (> 2000 ° C) amination dauki, da TaC shafi iya gaba daya ware graphite substrate, kauce wa carbon gurbatawa, da kuma inganta tsarki na AlN crystal.