Wafer susceptor yokhala ndi zokutira za TaC za G5 G10

VET Energy a paokha anayamba CVD tantalum carbide (TaC) ❖ kuyanika yopyapyala susceptor lakonzedwa kuti zinthu zankhanza ntchito monga semiconductor kupanga, LED epitaxial yopyapyala kukula (MOCVD), galasi kukula ng'anjo, mkulu-kutentha zingalowe kutentha kutentha mankhwala, etc. Kupyolera mu mankhwala nthunzi deposition (CVD) luso, ndi wandiweyani carbide pamwamba tantala gawo lapansi, kupereka thireyi kopitilira muyeso kutentha bata (> 3000 ℃), kukana kusungunula zitsulo dzimbiri, matenthedwe kukana mantha ndi makhalidwe otsika kuipitsa, kwambiri kutalikitsa moyo utumiki.

Ubwino wathu mwaukadaulo:
1. Kukhazikika kwapamwamba kwambiri kutentha.
3880 ° C Melting Point: Kupaka kwa Tantalum carbide kumatha kugwira ntchito mosalekeza komanso mokhazikika pamwamba pa 2500 ° C, kupitilira kutentha kwa 1200-1400 ° C kwa zokutira wamba za silicon carbide (SiC).
Kulimbana ndi kutentha kwa kutentha: Kukula kwa kutentha kwa kutentha kumafanana ndi gawo laling'ono la graphite (6.6 × 10 -6 / K), ndipo limatha kupirira kutentha kwachangu kukwera ndi kugwa kwa kutentha ndi kusiyana kwa kutentha kwa 1000 ° C kupewa kusweka kapena kugwa.
Kutentha kwamphamvu kwamakina: Kulimba kwa zokutira kumafika 2000 HK (Vickers kuuma) ndi zotanuka modulus ndi 537 GPa, ndipo imasungabe mphamvu zamapangidwe abwino kwambiri pakutentha kwambiri.

2. Zosachita dzimbiri kwambiri kuti zitsimikizire chiyero cha njira
Kukana kwabwino kwambiri: Imakhala ndi kukana bwino kwa mpweya wowononga monga H₂, NH₃, SiH₄, HCl ndi zitsulo zosungunuka (monga Si, Ga), kupatulira gawo lapansi la graphite ku malo otakasuka ndikupewa kuipitsidwa ndi mpweya.
Kusamuka kwachidebe chochepa: chiyero chapamwamba kwambiri, chimalepheretsa bwino kusamuka kwa nayitrogeni, mpweya ndi zonyansa zina kupita ku kristalo kapena epitaxial wosanjikiza, kuchepetsa chilema cha ma microtubes ndi oposa 50%.

3. Nano-level mwatsatanetsatane kuti apititse patsogolo kugwirizana kwa ndondomeko
≤ ± 5% makulidwe, flatness pamwamba kufika nanometer mlingo, kuonetsetsa kusasinthasintha mkulu wa yopyapyala kapena krustalo magawo kukula, matenthedwe chifanane cholakwika <1%.
Kulondola kwapang'onopang'ono: imathandizira ± 0.05mm kulolerana mwamakonda, imagwirizana ndi 4-inchi mpaka 12-inch wafers, ndipo imakwaniritsa zosowa zamakina apamwamba kwambiri a zida.

4. Zokhalitsa komanso zolimba, kuchepetsa ndalama zonse
Mphamvu yomangirira: Mphamvu yomangirira pakati pa zokutira ndi gawo lapansi la graphite ndi ≥5 MPa, kugonjetsedwa ndi kukokoloka ndi kuvala, ndipo moyo wautumiki umakulitsidwa kupitilira katatu.

Kugwirizana kwa Makina
Oyenera zida zokulirapo za epitaxial ndi crystal kukula monga CVD, MOCVD, ALD, LPE, etc., kuphimba SiC crystal kukula (PVT njira), GaN epitaxy, AlN substrate kukonzekera ndi zochitika zina.
Timapereka mitundu yosiyanasiyana ya susceptor monga lathyathyathya, concave, convex, etc. Makulidwe (5-50mm) ndi masanjidwe a dzenje amatha kusinthidwa molingana ndi kapangidwe kameneka kuti akwaniritse Kugwirizana kosagwirizana ndi zida.

Kugwiritsa Ntchito Kwambiri:
Kukula kwa kristalo wa SiC: Mu njira ya PVT, zokutira zimatha kukhathamiritsa kugawa kwamafuta, kuchepetsa zolakwika zam'mphepete, ndikuwonjezera kukula kwa kristalo kupitilira 95%.
GaN epitaxy: Mu ndondomeko ya MOCVD, cholakwika cha kutentha kwa kutentha ndi <1%, ndipo kugwirizana kwa epitaxial layer makulidwe kumafika ± 2%.
Kukonzekera kwa gawo la AlN: Pakutentha kwambiri (> 2000 ° C) amination reaction, ❖ kuyanika kwa TaC kumatha kulekanitsa gawo lapansi la graphite, kupewa kuipitsidwa kwa kaboni, ndikuwongolera kuyera kwa kristalo wa AlN.