Wafer susceptor ine TaC coating yeG5 G10

VET Energy's yakagadzirwa yega CVD tantalum carbide (TaC) coating wafer susceptor yakagadzirirwa mamiriro ekushanda akaomarara akadai sekugadzira semiconductor, LED epitaxial wafer growth (MOCVD), crystal growth furnace, high-temperature vacuum heat treatment, nezvimwewo. Kuburikidza ne chemical vapor deposition (CVD), dense uye uniform tantalum carbide coating inoumbwa pamusoro pe graphite substrate, zvichiita kuti tray ive yakasimba kwazvo (>3000℃), irambe ngura yesimbi yakanyungudutswa, irambe thermal shock uye ine hunhu hushoma hwekusvibiswa, zvichiwedzera hupenyu hwebasa.

Zvakanakira zvedu zvehunyanzvi:
1. Kugadzikana kwekupisa kwakanyanya.
3880°C Nzvimbo Yekunyunguduka: Kuputira kweTantalum carbide kunogona kushanda nguva dzose uye zvakadzikama pamusoro pe2500°C, zvichipfuura tembiricha yekuora kwe1200-1400°C yekubatanidza kwesilicon carbide (SiC) yakajairika.
Kudzivirira kupisa: Kuwanda kwekuwedzera kwekupisa kwejira kunoenderana nekwe graphite substrate (6.6×10 -6 /K), uye kunogona kutsungirira kukwira nekukurumidza kwekushisa uye kudonha kwemazinga ane musiyano wekupisa unopfuura 1000°C kudzivirira kutsemuka kana kudonha.
Hunhu hwemakanika hunodziya zvakanyanya: Hukuoma kwejira rinosvika 2000 HK (hukuoma hwaVickers) uye elastic modulus i537 GPa, uye ichiri kuchengetedza simba rakanaka rekuvaka pakupisa kwakanyanya.

2. Inodzivirira ngura zvakanyanya kuti ive nechokwadi chekuchena kwemaitiro
Kudzivirira kwakanaka kwazvo: Inodzivirira zvakanyanya magasi anoparadza akadai seH₂, NH₃, SiH₄, HCl nesimbi dzakanyungudutswa (semuenzaniso Si, Ga), ichibvisa zvachose girafiti substrate kubva munzvimbo inochinja-chinja uye ichidzivirira kusvibiswa kwekabhoni.
Kutama kusina kuchena: kuchena kwakanyanya, zvinobudirira kudzivirira kutama kwenitrogen, okisijeni nezvimwe tsvina kuenda kukristaro kana epitaxial layer, zvichideredza mwero wekukanganisa kwema microtubes neanopfuura 50%.

3. Kunyatsojeka kweNano-level kuvandudza kuenderana kwemaitiro
Kufanana kwekuvhara: kushivirira ukobvu≤±5%, kutsetseka kwepamusoro kunosvika padanho re nanometer, kuve nechokwadi chekuti parameter yekukura kwewafer kana crystal yakaenzana zvakanyanya, kukanganisa kwekufanana kwekupisa<1%.
Kururama kwehukuru: inotsigira kugadziriswa kwe ±0.05mm kwekushivirira, inochinjika kuma wafers ane 4-inch kusvika 12-inch, uye inosangana nezvinodiwa zvemichina yakanyatsogadzirwa.

4. Inogara kwenguva refu uye inogara kwenguva refu, ichideredza mari yose
Simba rekubatanidza: Simba rekubatanidza pakati pechifukidziro negrafiti substrate i ≥5 MPa, rinodzivirira kukurwa nekusakara, uye hupenyu hwebasa hunowedzerwa nekanopfuura katatu.

Kuenderana kwemuchina
Yakakodzera michina mikuru yekukura kwe epitaxial nekristaro yakaita seCVD, MOCVD, ALD, LPE, nezvimwewo, inosanganisira kukura kwekristaro yeSiC (nzira yePVT), GaN epitaxy, kugadzirira substrate yeAlN nedzimwe mamiriro ezvinhu.
Tinopa mhando dzakasiyana dzemaumbirwo esusceptor akadai seakatsetseka, akakombama, akakombama, nezvimwewo. Ukobvu (5-50mm) uye marongerwo emaburi ekuisa zvinhu zvinogona kugadziriswa zvichienderana nechimiro chegomba kuti zvienderane nemidziyo zvakanaka.

Mashandisirwo Makuru:
Kukura kwekristaro yeSiC: Munzira yePVT, chifukidziro chinogona kugadzirisa kugoverwa kwemunda wekupisa, kuderedza zvikanganiso zvemucheto, uye kuwedzera nzvimbo yekukura inoshanda yekristaro kusvika kupfuura 95%.
GaN epitaxy: Mukuita kweMOCVD, kukanganisa kwe susceptor thermal uniformity kuri <1%, uye kuenderana kweukobvu hwe epitaxial layer kunosvika ±2%.
Kugadzirira AlN substrate: Mukupisa kwakanyanya (>2000°C) amination reaction, TaC coating inogona kuparadzanisa zvachose graphite substrate, kudzivirira kusvibiswa kwekabhoni, uye kunatsiridza kuchena kweAlN crystal.