Wafer susceptor ine TaC coating yeG5 G10

VET Energy's yakazvimiririra yakagadziridzwa CVD tantalum carbide (TaC) coating wafer susceptor yakagadzirirwa kuomesesa kushanda mamiriro semiconductor kugadzira, LED epitaxial wafer kukura (MOCVD), crystal yekukura vira, high-temperature vacuum kupisa kupisa, nezvimwewo. substrate, ichipa tireyi yekupedzisira-yepamusoro tembiricha kugadzikana (> 3000 ℃), kuramba kune yakanyungudutswa simbi corrosion, kupisa kutyisa kuramba uye kuderera kusvibiswa maitiro, zvakanyanya kuwedzera hupenyu hwesevhisi.

Zvedu zvehunyanzvi zvakanakira:
1. Ultra-yakakwirira tembiricha kugadzikana.
3880 ° C Melting Point: Tantalum carbide coating inogona kushanda ichienderera uye yakadzikama pamusoro pe2500 ° C, inopfuura nekure iyo 1200-1400 ° C yekuora tembiricha yeyakajairwa silicon carbide (SiC) machira.
Thermal shock resistance: Thermal expansion coefficient of the coating inoenderana neiyo graphite substrate (6.6 × 10 -6 / K), uye inogona kumira nekukurumidza kukwira kwekushisa nekudonha kutenderera nekusiyana kwetembiricha inopfuura 1000 ° C kudzivirira kuputika kana kudonha.
Yakakwira tembiricha yemagetsi zvivakwa: Kuomarara kwekuvhara kunosvika 2000 HK (Vickers kuomarara) uye elastic modulus i537 GPa, uye ichiri kuchengetedza yakanakisa kusimba kusimba pakupisa kwakanyanya.

2. Kunyanya kusaita ngura kuti uone kuchena kwemaitiro
Kupokana kwakanakisa: Kunopikisa kwakanyanya kumagasi anoodza akadai seH₂, NH₃, SiH₄, HCl uye simbi dzakanyungudutswa (semuenzaniso Si, Ga), ichibvisa zvachose graphite substrate kubva munzvimbo inoshanda uye kudzivirira kusvibiswa kwekabhoni.
Kufamba kwakadzika kusina kuchena: ultra-high kuchena, zvinobudirira kudzivisa kutama kwe nitrogen, okisijeni uye kumwe kusvibiswa kune kristall kana epitaxial layer, kuderedza kukanganisa kwema microtubes kupfuura 50%.

3. Nano-level precision yekuvandudza maitiro ekugadzirisa
Coating uniformity: ukobvu kushivirira≤± 5%, flatness yepasi inosvika nanometer level, kuve nechokwadi chekukwirirana kwewafer kana kristaro kukura paramita, thermal uniformity kukanganisa <1%.
Dimensional kurongeka: inotsigira ± 0.05mm kushivirira kugadzirisa, inochinjika kune 4-inch kusvika 12-inch wafers, uye inosangana nezvinodiwa zvepamusoro-chaiyo michina interfaces.

4. Inogara kwenguva refu uye yakasimba, kuderedza mari yose
Simba rekubatanidza: Simba rekubatanidza pakati pekupfekedza uye graphite substrate ndeye ≥5 MPa, inoshingirira kukurwa nekupfeka, uye hupenyu hwesevhisi hunowedzerwa nekanopfuura ka3.

Machine Kugarisana
Inokodzera mainstream epitaxial uye crystal yekukura michina yakadai seCVD, MOCVD, ALD, LPE, nezvimwewo, inovhara SiC crystal kukura (PVT nzira), GaN epitaxy, AlN substrate kugadzirira uye zvimwe zviitiko.
Isu tinopa akasiyana susceptor maumbirwo akadai flat, concave, convex, etc. Ukobvu (5-50mm) uye positioning gomba marongerwo anogona kugadziriswa maererano cavity chimiro kuti kuwana musono Kuenderana nemidziyo.

Main Applications:
SiC crystal kukura: MuPVT nzira, kupfekedza kunogona kukwidziridza kugoverwa kwemunda wekupisa, kuderedza kukanganisa kumucheto, uye kuwedzera nzvimbo inobudirira yekukura kwekristaro kusvika kupfuura 95%.
GaN epitaxy: Muchiitiko cheMOCVD, kukanganisa kwekupisa kwekupisa kwemafuta ndeye <1%, uye kuwirirana kwe epitaxial layer thickness kunosvika ± 2%.
AlN substrate kugadzirira: Mutembiricha yepamusoro (> 2000 ° C) amination reaction, iyo TaC coating inogona kutsaura zvachose iyo graphite substrate, kudzivirira kusvibiswa kwekabhoni, uye kugadzirisa kuchena kweAlN crystal.