Susceptor Wafer oo leh daahan TaC ee G5 G10

VET Energy ayaa si madax banaan u horumaray CVD tantalum carbide (TaC) daahan susceptor wafer waxaa loogu talagalay xaaladaha adag shaqada sida wax soo saarka semiconductor, LED kobaca wafer wafer (MOCVD), foornada koritaanka crystal, heerkulka-sare ee vacuum daaweynta kulaylka, iwm Iyada oo kaydka uumiga kiimikada (CVD) technology, cufan iyo daahan ka mid ah tantalum la sameeyey oo dusha sare ee tantalum ah. xasilloonida heerkulka ultra-sare (> 3000 ℃), iska caabin ah daxalka dhalaalaysa biraha, caabbinta shoogga kulaylka iyo sifooyinka wasakhda hoose, si weyn u kordhinaya nolosha adeegga.

Faa'iidooyinkayada farsamo:
1. Dejinta heerkulka aadka u sarreeya.
3880°C Meesha dhalaalaysa: Tantalum carbide daahan waxa uu u shaqayn karaa si joogto ah oo xasiloon oo ka saraysa 2500°C, taas oo aad uga badan 1200-1400°C heerkul-ku-bax ee dahaarka silikoon carbide (SiC) ee caadiga ah.
Iska caabbinta shoogga kulaylka: Isku-dhafka fidinta kulaylka ee daahan wuxuu u dhigmaa midka graphite substrate (6.6 × 10 -6 / K), wuxuuna u adkeysan karaa heerkulka degdega ah ee kor u kaca iyo wareegyada dayrta oo leh kala duwanaansho heerkul ka badan 1000 ° C si looga fogaado dildilaaca ama hoos u dhaca.
Heerkulka heer-kulka sare ee farsamada: adkaanta dahaarka waxay gaartaa 2000 HK (engegnaanta Vickers) iyo modules-ka laastikada waa 537 GPa, waxayna wali ku haysaa awood qaabdhismeed heer sare ah heerkul sare.

2. Aad u adkaysi u leh daxalka si loo hubiyo nadiifnimada habka
Iska caabin heer sare ah: Waxay leedahay iska caabin heer sare ah oo ay u leedahay gaasaska wasakhaysan sida H₂, NH₃, SiH₄, HCl iyo biraha dhalaalay (tusaale Si, Ga), oo gabi ahaanba ka go'doomisa substrate garaafyada jawiga falcelinta iyo ka fogaanshaha wasakhowga kaarboonka.
U guuritaanka wasakhda hoose: nadiifinta aadka u sareysa, si wax ku ool ah u joojiso socdaalka nitrogen, oxygen iyo wasakhda kale ee lakabka crystal ama epitaxial, hoos u dhigista heerka cilladda microtubes in ka badan 50%.

3. Saxnaanta heerka Nano si loo hagaajiyo joogtaynta nidaamka
Dahaarka lebbiska: dulqaadka dhumucdiisuna ≤± 5%, flatness oogada waxay gaartaa heerka nanometer, hubinta joogteynta sare ee wafer ama xuduudaha koritaanka crystal, qalad labis kuleyl ah <1%.
Saxnaanta cabbirka: waxay taageertaa ± 0.05mm u-habaynta dulqaadka, waxay la qabsataa 4-inch ilaa 12-inji wafers, waxayna buuxisaa baahiyaha is-dhexgalyada qalabka saxda ah.

4. Waara oo waara, dhimaya kharashaadka guud
Awoodda isku-xidhka: Awoodda isku-xidhka ee u dhexeeya daahan iyo substrate-ka garaafyada waa ≥5 MPa, adkaysi u leh nabaad guurka iyo xirashada, iyo nolosha adeegga waxaa lagu kordhiyey in ka badan 3 jeer.

Waafaqid Mashiinka
Ku habboon qalabka guud ee epitaxial iyo crystal koritaanka sida CVD, MOCVD, ALD, LPE, iwm, oo daboolaya koritaanka SiC crystal (habka PVT), GaN epitaxy, diyaarinta substrate AlN iyo xaalado kale.
Waxaan bixinaa noocyo kala duwan oo ah qaababka jilicsan sida flat, concave, convex, iwm. Dhumucda (5-50mm) iyo meelaynta qaabka daloolku waa la hagaajin karaa iyadoo loo eegayo qaab dhismeedka godka si loo gaaro is-waafajin la'aanta qalabka.

Codsiyada ugu muhiimsan:
Kobaca crystal SiC: Habka PVT, dahaarka wuxuu wanaajin karaa qaybinta goobta kulaylka, yaraynta cilladaha cidhifyada, iyo kordhinta aagga kobaca wax ku oolka ah ee crystal in ka badan 95%.
GaN epitaxy: Habka MOCVD, qaladka lebbiska kulaylka susceptor waa <1%, iyo joogteynta dhumucda lakabka epitaxial waxay gaartaa ± 2%.
Diyaarinta substrate-ka AlN: Heerkulka sare (> 2000 ° C) falcelinta aminta, dahaarka TaC wuxuu si buuxda u go'doomin karaa substrate-ka garaafka, ka fogaana wasakhowga kaarboonka, wuxuuna wanaajin karaa nadiifnimada AlN crystal.