Wafer susceptor me ka uhi TaC no G5 G10

Hoʻolālā kūʻokoʻa ka VET Energy ka CVD tantalum carbide (TaC) coating wafer susceptor no nā kūlana hana koʻikoʻi e like me ka semiconductor manufacturing, LED epitaxial wafer ulu (MOCVD), kapuahi ulu kristal, wela wela wela wela, etc. substrate, e hāʻawi ana i ka pā kiʻekiʻe kiʻekiʻe wela paʻa (> 3000 ℃), kū'ē i ka hoʻoheheʻe metala corrosion, thermal haʻalulu kū'ē a me ka haʻahaʻa pollution hiʻona, nui hoʻonui i ke ola lawelawe.

ʻO kā mākou pono ʻenehana:
1. Ultra-kiʻekiʻe wela paʻa.
3880°C Melting Point: Hiki i ka Tantalum carbide coating ke hana mau a paʻa ma luna o 2500°C, ʻoi aku ma mua o ka 1200-1400°C decomposition wela o nā uhi silicon carbide (SiC) maʻamau.
ʻO ke kūpaʻa haʻalulu wela: ʻO ka coefficient hoʻonui wela o ka uhi e kūlike me ka substrate graphite (6.6 × 10 -6 / K), a hiki ke pale i ka piʻi wikiwiki ʻana o ka wela a hāʻule i nā pōʻai me ka ʻokoʻa o ka mahana ma mua o 1000 ° C e pale aku ai i ka haki ʻana a hāʻule paha.
ʻO nā waiwai mechanical wela kiʻekiʻe: ʻO ka paʻakikī o ka uhi ʻana a hiki i 2000 HK (Vickers hardness) a ʻo ka modulus elastic he 537 GPa, a ke mālama mau nei ia i ka ikaika hoʻolālā maikaʻi loa i nā wela kiʻekiʻe.

2. ʻAʻole hiki ke hoʻomaʻemaʻe i ke kaʻina hana
Kū'ē maikaʻi loa: He kūpaʻa maikaʻi loa ia i nā kinoea corrosive e like me H₂, NH₃, SiH₄, HCl a me nā metala hoʻoheheʻe ʻia (e laʻa me Si, Ga), e hoʻokaʻawale loa i ka substrate graphite mai ke kaiapuni reactive a pale i ka hoʻohaumia kalapona.
ʻO ka neʻe ʻana o ka haumia haʻahaʻa: ka maʻemaʻe ultra-kiʻekiʻe, kaohi pono i ka neʻe ʻana o ka nitrogen, oxygen a me nā mea haumia ʻē aʻe i ke aniani a i ʻole ka epitaxial layer, e hōʻemi ana i ka helu kīnā o nā microtubes ma mua o 50%.

3. Nano-level precision e hoʻomaikaʻi i ke kaʻina hana
Hoʻohui like ʻole: ka mānoanoa tolerance≤ ± 5%, hiki i ka palahalaha ʻili ke kiʻekiʻe nanometer, e hōʻoiaʻiʻo ana i ke kūpaʻa kiʻekiʻe o ka wafer a i ʻole ka ulu ʻana o nā ʻāpana aniani, ka hewa uniformity thermal <1%.
Ka pololei ana: kākoʻo ± 0.05mm hoʻomanawanui hoʻoponopono, hoʻololi i ka 4-ʻīniha a 12-ʻīniha wafers, a hoʻokō i nā pono o nā mea hana kiʻekiʻe.

4. Ka lōʻihi a me ka lōʻihi, e ho'ēmi ana i nā koina holoʻokoʻa
Ka ikaika paʻa: ʻO ka ikaika hoʻopaʻa ma waena o ka uhi a me ka substrate graphite ʻo ≥5 MPa, kūpaʻa i ka erosion a me ka lole, a hoʻonui ʻia ke ola lawelawe ma mua o 3 mau manawa.

Mīkini Kaulike
He kūpono no ka epitaxial a me nā mea ulu kristal e like me CVD, MOCVD, ALD, LPE, etc., e uhi ana i ka ulu kristal SiC (PVT method), GaN epitaxy, AlN substrate preparation a me nā hiʻohiʻona ʻē aʻe.
Hāʻawi mākou i nā ʻano like ʻole o ka susceptor e like me ka pālahalaha, concave, convex, etc. Hiki ke hoʻoponopono ʻia ka mānoanoa (5-50mm) a me ka hoʻonohonoho hole hole e like me ke ʻano o ka cavity e hoʻokō ai i ka seamless Compatibility me nā mea hana.

Nā noi nui:
ʻO ka ulu ʻana o ke aniani SiC: Ma ke ʻano PVT, hiki i ka uhi ke hoʻonui i ka hoʻohele ʻana i ka māla wela, e hōʻemi i nā hemahema o ka ʻaoʻao, a hoʻonui i ka ulu ulu pono o ka aniani i ʻoi aku ma mua o 95%.
GaN epitaxy: I ka MOCVD kaʻina, ka susceptor thermal uniformity hewa he <1%, a me ka like o ka epitaxial mānoanoa o ka mānoanoa a hiki i ±2%.
AlN substrate hoomakaukau: Ma ka wela wela (>2000°C) amination reaction, ka TaC coating hiki ke hoʻokaʻawale loa i ka graphite substrate, pale kalapona contamination, a hoʻomaikaʻi i ka maemae o ka AlN kristal.