Imashini ifata umugati ifite TaC coating kuri G5 G10

Imashini ya VET Energy ya CVD tantalum carbide (TaC) yakozwe ku giti cyayo ikoreshwa mu gukora mu bihe bikomeye nko gukora semiconductor, LED epitaxial wafer growth (MOCVD), crystal growth furnace, high-temperature vacuum bushyuhe, nibindi. Binyuze mu ikoranabuhanga rya chemical vapor deposition (CVD), hakorwa imashini ya tantalum carbide ifite ubushyuhe bwinshi kandi bungana ku buso bwa grafiti, bigatuma agasanduku kagumana ubushyuhe bwinshi cyane (>3000℃), karwanya ingese y'icyuma gishongeshejwe, karwanya ubushyuhe n'isuku nke, bigatuma ubuzima bwacyo burushaho kuba bwiza.

Ibyiza byacu bya tekiniki:
1. Guhagarara neza mu bushyuhe buri hejuru cyane.
3880°C Aho gushonga: Tantalum carbide coatings ishobora gukora buri gihe kandi mu buryo buhamye hejuru ya 2500°C, irenga cyane ubushyuhe bwa 1200-1400°C bwo kubora nk'uko bikunze gukoreshwa mu gushonga kwa silicon carbide (SiC).
Ubudahangarwa bw'ingufu z'ubushyuhe: Ingano y'ubushyuhe bw'ipamba ihuye n'iya graphite substrate (6.6 × 10 -6 /K), kandi ishobora kwihanganira izamuka ryihuse ry'ubushyuhe n'igabanuka ry'ubushyuhe hamwe n'itandukaniro ry'ubushyuhe burenze 1000°C kugira ngo hirindwe gucika cyangwa kugwa.
Imiterere y'ubushyuhe bwinshi: Ubukomere bwo gutwikira bugera kuri 2000 HK (ubukomere bwa Vickers) naho modulus yo gukaraba ni 537 GPa, kandi iracyakomeza gukomera neza mu nyubako iyo ubushyuhe bwinshi bukabije.

2. Irwanya ingese cyane kugira ngo ikore neza
Ubudahangarwa bwiza cyane: Ifite ubudahangarwa bwiza cyane ku myuka yangiza nka H₂, NH₃, SiH₄, HCl n'ibyuma bishongeshejwe (urugero: Si, Ga), itandukanya burundu icyuma cya grafiti n'ibidukikije biyirwanya kandi ikirinda kwanduzwa na karuboni.
Kwimuka kw'umwanda muke: ubuziranenge buri hejuru cyane, bibuza neza kwimuka kwa azote, ogisijeni n'indi myanda mu gice cya kristu cyangwa epitaxial, bigabanya igipimo cy'ubusembwa bwa mikorobe ho hejuru ya 50%.

3. Ubuhanga bwo ku rwego rwa Nano kugira ngo kunoze uburyo bwo gukora ibintu buhamye
Uburinganire bw'igitambaro: kwihanganira ubugari≤±5%, ubuso bugera ku rugero rwa nanometer, bigatuma habaho imiterere ihamye y'ibipimo by'ikura rya wafer cyangwa kristu, ikosa ry'ubushyuhe bungana<1%.
Ubuziranenge bw'ibipimo: bushyigikira uburyo bwo guhindura ubushobozi bwo kwihanganira ibintu bwa ± 0.05mm, buhuza n'udupira twa santimetero 4 kugeza kuri santimetero 12, kandi buhura n'ibikenewe mu buryo bworoshye bwo gukoresha ibikoresho.

4. Iramba kandi iramba, igabanya ikiguzi rusange
Ingufu zo gufatanya: Ingufu zo gufatanya hagati y’igitambaro n’icyuma gikozwe muri grafiti ni ≥5 MPa, zirwanya isuri n’ingufu, kandi igihe cyo gukora cyongerwaho inshuro zirenga 3.

Guhuza imashini
Bikwiriye ibikoresho bikurura epitaxial na kristu nka CVD, MOCVD, ALD, LPE, nibindi, bikubiyemo gukura kwa kristu ya SiC (uburyo bwa PVT), epitaxy ya GaN, gutegura substrate ya AlN n'ibindi.
Dutanga imiterere itandukanye ya susceptor nko kuba ndende, ifunze, ipfunze, nibindi. Ubunini (5-50mm) n'imiterere y'umwobo bishobora guhindurwa hakurikijwe imiterere y'umwobo kugira ngo bihuzwe neza n'ibikoresho.

Porogaramu z'ingenzi:
Gukura kwa kristu ya SiC: Mu buryo bwa PVT, irangi rishobora kunoza ikwirakwizwa ry'ubushyuhe, kugabanya inenge z'inkombe, no kongera ubuso bukura neza bwa kristu kugeza ku kigero kirenga 95%.
GaN epitaxy: Muri gahunda ya MOCVD, ikosa ry'ubushyuhe bungana ni <1%, kandi uburinganire bw'ubugari bw'urwego rwa epitaxial bugera kuri ± 2%.
Gutegura substrate ya AlN: Mu gihe cy'ubushyuhe bwinshi (>2000°C), igishishwa cya TaC gishobora gukura burundu substrate ya grafiti, kwirinda kwanduza karuboni, no kunoza ubuziranenge bwa kristu ya AlN.