Wafer susceptor hamwe na TaC itwikiriye G5 G10

VET Energy yigenga yigenga ya CVD tantalum karbide (TaC) itwikiriye wafer susceptor igenewe akazi katoroshye nko gukora semiconductor, gukura kwa epitaxial wafer (MOCVD), itanura ryikura rya kirisiti, kuvura ubushyuhe bwa vacuum, nibindi byinshi. Ubushyuhe bukabije cyane (> 3000 ℃), kurwanya icyuma gishongeshejwe cyangirika, kurwanya ubushyuhe bwumuriro nibiranga umwanda muke, byongerera igihe ubuzima bwa serivisi.

Ibyiza bya tekiniki:
1. Ubushyuhe bwo hejuru cyane.
3880 ° C Gushonga: Gufata karbide ya Tantalum irashobora gukora ubudahwema kandi ihagaze hejuru ya 2500 ° C, ikarenga kure ubushyuhe bwa 1200-1400 ° C bwangirika bwa karubide isanzwe ya silikoni (SiC).
Kurwanya ubushyuhe bwumuriro: Coefficente yo kwagura ubushyuhe bwa coating ihuye nubushushanyo bwa grafite (6.6 × 10 -6 / K), kandi irashobora kwihanganira izamuka ryubushyuhe bwihuse hamwe nizuba ryikigereranyo hamwe nubushyuhe burenze 1000 ° C kugirango wirinde guturika cyangwa kugwa.
Ubushyuhe bwo hejuru bwubukanishi: Ubukonje bukabije bugera kuri 2000 HK (Vickers hardness) naho modulus ya elastique ni 537 GPa, kandi iracyafite imbaraga zubaka zubushyuhe bwinshi.

2. Kurwanya ruswa cyane kugirango irinde isuku
Kurwanya bihebuje: Ifite imbaraga zo kurwanya imyuka yangiza nka H₂, NH₃, SiH₄, HCl hamwe nicyuma gishongeshejwe (urugero: Si, Ga), itandukanya burundu insimburangingo ya grafite n’ibidukikije kandi ikirinda kwanduza karubone.
Kwimuka kwanduye kwinshi: ultra-high isuku, ibuza neza kwimuka kwa azote, ogisijeni nindi myanda ijya kuri kristu cyangwa epitaxial, kugabanya umuvuduko wa microtubes hejuru ya 50%.

3. Nano-urwego rwukuri kugirango tunoze inzira ihamye
Ipfundikanya imwe: kwihanganira umubyimba≤ ± 5%, uburinganire bwubutaka bugera kurwego rwa nanometero, byemeza ko bihoraho cyane byikura rya wafer cyangwa kristu yo gukura, ikosa ryubushyuhe bwumuriro <1%.
Ibipimo bifatika: bishyigikira ± 0.05mm kwihanganira kwihanganira, guhuza na santimetero 4 kugeza kuri 12-waferi, kandi byujuje ibyifuzo byimikorere ihanitse.

4. Kuramba kandi biramba, kugabanya ibiciro muri rusange
Imbaraga zo guhuza: Imbaraga zihuza hagati ya coating na grafite substrate ni ≥5 MPa, irwanya isuri no kwambara, kandi ubuzima bwa serivisi bwongerewe inshuro zirenga 3.

Guhuza Imashini
Birakwiriye muburyo bukuru bwibikoresho bikura nka CVD, MOCVD, ALD, LPE, nibindi, bikubiyemo gukura kwa kirisiti ya SiC (uburyo bwa PVT), epitaxy ya GaN, gutegura kwa AlN nibindi bintu.
Dutanga imiterere itandukanye ya susceptor nka tekinike, yegeranye, convex, nibindi. Ubugari (5-50mm) hamwe nimiterere yumwobo birashobora guhinduka ukurikije imiterere ya cavity kugirango bigerweho neza hamwe nibikoresho.

Porogaramu nyamukuru:
Gukura kwa kirisiti ya SiC: Muburyo bwa PVT, igifuniko gishobora guhindura ikwirakwizwa ryumuriro wumuriro, kugabanya inenge, no kongera ubuso bwiza bwikura rya kirisiti kugeza hejuru ya 95%.
GaN epitaxy: Mubikorwa bya MOCVD, ikosa rya susceptor yumuriro umwe ni <1%, hamwe nuburinganire bwa epitaxial layer igera kuri ± 2%.
Gutegura AlN substrate: Mubushyuhe bwo hejuru (> 2000 ° C) reaction ya amination, igifuniko cya TaC gishobora gutandukanya burundu insimburangingo ya grafite, kwirinda kwanduza karubone, no kunoza isuku ya kirisiti ya AlN.