Wafer susceptor nrog TaC txheej rau G5 G10

VET Energy tus kheej tsim CVD tantalum carbide (TaC) txheej wafer susceptor yog tsim los rau cov xwm txheej ua haujlwm hnyav xws li kev tsim khoom semiconductor, LED epitaxial wafer loj hlob (MOCVD), siv lead ua kom loj hlob rauv taws, kev kho cua sov siab, thiab lwm yam. Los ntawm kev siv tshuaj lom neeg vapor deposition (CVD) thev naus laus zis, ib txheej tantalum carbide tuab thiab sib xws yog tsim rau ntawm qhov chaw ntawm graphite substrate, muab lub tais ultra-siab kub ruaj khov (> 3000 ℃), tiv taus cov hlau molten corrosion, thermal shock tsis kam thiab cov yam ntxwv tsis muaj kuab paug, ntev lub neej kev pabcuam.

Peb cov txiaj ntsig kev tshaj lij:
1. Kev ruaj khov kub heev.
3880 ° C Melting Point: Tantalum carbide txheej tuaj yeem ua haujlwm tas mus li thiab ruaj khov saum 2500 ° C, siab tshaj qhov kub ntawm 1200-1400 ° C ntawm cov txheej txheem silicon carbide (SiC) ib txwm muaj.
Kev tiv thaiv kev poob siab thermal: Cov coefficient thermal expansion ntawm cov txheej txheem phim cov graphite substrate (6.6 × 10 -6 /K), thiab tuaj yeem tiv taus qhov kub nce thiab poob sai nrog qhov sib txawv ntawm qhov kub ntau dua 1000 ° C kom tsis txhob tawg lossis poob.
Cov khoom siv kho tshuab kub siab: Qhov tawv ntawm txheej txheej ncav cuag 2000 HK (Vickers hardness) thiab cov qauv elastic yog 537 GPa, thiab nws tseem tswj tau lub zog zoo heev ntawm qhov kub siab.

2. Tsis tshua muaj corrosion-resistant kom ntseeg tau tias cov txheej txheem purity
Kev tiv thaiv zoo heev: Nws muaj kev tiv thaiv zoo rau cov pa roj corrosive xws li H₂, NH₃, SiH₄, HCl thiab cov hlau molten (piv txwv li Si, Ga), cais tag nrho cov graphite substrate ntawm qhov chaw reactive thiab zam kev ua qias tuaj ntawm cov pa roj carbon.
Kev tsiv teb tsaws chaw tsis muaj kuab paug tsawg: kev ntshiab siab heev, ua kom zoo tiv thaiv kev tsiv teb tsaws chaw ntawm nitrogen, oxygen thiab lwm yam tsis huv mus rau txheej siv lead ua lossis epitaxial, txo qhov tsis zoo ntawm microtubes ntau dua 50%.

3. Nano-level precision los txhim kho cov txheej txheem sib xws
Kev sib npaug ntawm txheej: kev kam rau siab tuab ≤ ± 5%, qhov chaw tiaj tiaj ncav cuag qib nanometer, ua kom muaj kev sib xws ntawm cov wafer lossis cov qauv loj hlob siv lead ua ke, qhov yuam kev thermal uniformity <1%.
Qhov tseeb ntawm qhov ntev: txhawb nqa ± 0.05 hli kev hloov kho qhov kam rau siab, hloov kho rau 4-nti txog 12-nti wafers, thiab ua tau raws li qhov xav tau ntawm cov khoom siv sib txuas lus siab.

4. Siv tau ntev thiab ruaj khov, txo cov nqi tag nrho
Lub zog sib txuas: Lub zog sib txuas ntawm cov txheej thiab cov graphite substrate yog ≥5 MPa, tiv taus kev yaig thiab hnav, thiab lub neej ua haujlwm ntev dua 3 zaug.

Kev Sib Tw Tshuab
Haum rau cov khoom siv epitaxial thiab cov khoom siv loj hlob siv lead ua xws li CVD, MOCVD, ALD, LPE, thiab lwm yam, npog SiC siv lead ua loj hlob (PVT txoj kev), GaN epitaxy, AlN substrate npaj thiab lwm yam xwm txheej.
Peb muab ntau yam duab ntawm cov khoom siv xws li tiaj tus, concave, convex, thiab lwm yam. Lub thickness (5-50mm) thiab qhov chaw teeb tsa tuaj yeem hloov kho raws li qhov qauv ntawm qhov kom ua tiav kev sib raug zoo nrog cov khoom siv.

Cov Ntawv Thov Tseem Ceeb:
Kev loj hlob ntawm SiC siv lead ua: Hauv txoj kev PVT, lub txheej txheej tuaj yeem ua kom zoo dua qhov kev faib tawm ntawm thaj chaw thermal, txo cov qhov tsis zoo ntawm ntug, thiab nce thaj chaw loj hlob zoo ntawm cov siv lead ua rau ntau dua 95%.
GaN epitaxy: Hauv cov txheej txheem MOCVD, qhov yuam kev thermal uniformity ntawm susceptor yog <1%, thiab qhov sib xws ntawm cov txheej epitaxial tuab ncav cuag ± 2%.
Kev npaj AlN substrate: Hauv qhov kub siab (> 2000 ° C) amination reaction, TaC txheej tuaj yeem cais cov graphite substrate tag nrho, zam kev ua qias tuaj ntawm cov pa roj carbon, thiab txhim kho qhov huv ntawm AlN crystal.