Wafer susceptor nrog TaC txheej rau G5 G10

VET Energy tus kheej tsim CVD tantalum carbide (TaC) txheej wafer susceptor yog tsim los rau hnyav ua hauj lwm tej yam kev mob xws li semiconductor manufacturing, LED epitaxial wafer loj hlob (MOCVD), siv lead ua kev loj hlob rauv, high-temperature nqus cua sov kev kho mob, thiab lwm yam. Los ntawm cov tshuaj vapor deposition (CVD) technology, ib tug tantalizing carbide formations ntawm dense thiab carbide. graphite substrate, muab lub tais ultra-siab kub stability (> 3000 ℃), tsis kam molten hlau corrosion, thermal poob siab tsis kam thiab cov yam ntxwv tsis muaj kuab paug, cuam tshuam rau kev pab cuam lub neej.

Peb qhov zoo technical:
1. Ultra-siab kub stability.
3880 ° C Melting Point: Tantalum carbide txheej tuaj yeem ua haujlwm tsis tu ncua thiab ruaj khov siab dua 2500 ° C, deb tshaj li 1200-1400 ° C decomposition kub ntawm cov pa roj carbon monoxide (SiC) txheej.
Thermal shock resistance: Lub thermal expansion coefficient ntawm cov txheej sib tw ntawm cov graphite substrate (6.6 × 10 -6 / K), thiab tuaj yeem tiv taus qhov kub ceev thiab poob mus rau qhov kub sib txawv ntawm ntau tshaj 1000 ° C kom tsis txhob tawg lossis poob tawm.
Cov khoom siv hluav taws xob kub kub: Cov txheej txheej hardness ncav cuag 2000 HK (Vickers hardness) thiab elastic modulus yog 537 GPa, thiab nws tseem tuav cov qauv zoo heev ntawm qhov kub thiab txias.

2. Tsis tshua muaj corrosion-resistant los xyuas kom meej cov txheej txheem purity
Kev ua haujlwm zoo heev: Nws muaj kev tiv thaiv zoo heev rau corrosive gases xws li H₂, NH₃, SiH₄, HCl thiab molten hlau (xws li Si, Ga), tag nrho cais cov graphite substrate los ntawm ib puag ncig reactive thiab zam cov pa roj carbon monoxide.
Tsawg impurity tsiv teb tsaws: ultra-siab purity, zoo inhibit qhov kev tsiv teb tsaws ntawm nitrogen, oxygen thiab lwm yam impurities mus rau cov siv lead ua los yog epitaxial txheej, txo qhov tsis xws luag ntawm microtubes los ntawm ntau tshaj 50%.

3. Nano-theem precision los txhim kho cov txheej txheem sib xws
Txheej uniformity: thickness kam rau ua ≤ ± 5%, nto flatness mus txog nanometer theem, kom ntseeg tau siab sib xws ntawm wafer los yog siv lead ua kev loj hlob tsis, thermal uniformity yuam kev <1%.
Dimensional raug: txhawb ± 0.05mm kam rau ua customization, yoog rau 4-nti mus rau 12-nti wafers, thiab ua tau raws li cov kev xav tau ntawm cov khoom siv high-precision interfaces.

4. Lub neej ntev thiab ruaj khov, txo cov nqi tag nrho
Bonding lub zog: Lub zog sib txuas ntawm cov txheej thiab cov graphite substrate yog ≥5 MPa, tiv taus yaig thiab hnav, thiab kev pabcuam lub neej txuas ntxiv los ntawm ntau dua 3 zaug.

Tshuab Compatibility
Haum rau cov khoom siv tseem ceeb epitaxial thiab siv lead ua kev loj hlob xws li CVD, MOCVD, ALD, LPE, thiab lwm yam, npog SiC siv lead ua kev loj hlob (PVT txoj kev), GaN epitaxy, AlN substrate npaj thiab lwm yam xwm txheej.
Peb muab ntau hom susceptor zoo li ca, concave, convex, thiab lwm yam. Lub thickness (5-50mm) thiab positioning qhov layout tuaj yeem hloov kho raws li cov qauv kab noj hniav kom ua tiav seamless Compatibility nrog cov khoom siv.

Cov ntawv thov tseem ceeb:
SiC siv lead ua kev loj hlob: Nyob rau hauv txoj kev PVT, txheej txheej tuaj yeem ua kom zoo dua qhov kev faib tawm thermal, txo qhov tsis xws ntawm ntug, thiab ua kom qhov kev loj hlob zoo ntawm cov siv lead ua rau ntau tshaj 95%.
GaN epitaxy: Hauv cov txheej txheem MOCVD, qhov cuam tshuam thermal uniformity yuam kev yog <1%, thiab qhov sib xws ntawm epitaxial txheej thickness nce mus txog ± 2%.
AlN substrate npaj: Nyob rau hauv qhov kub siab (> 2000 ° C) amination cov tshuaj tiv thaiv, TaC txheej tuaj yeem cais cov graphite substrate, zam cov pa paug, thiab txhim kho cov purity ntawm AlN crystal.