Wafer susceptor e nang le TaC coating bakeng sa G5 G10

VET Energy's e ikemetseng e tsoetseng pele ea CVD tantalum carbide (TaC) ea ho roala sekoti e etselitsoe maemo a thata a ho sebetsa joalo ka tlhahiso ea semiconductor, kholo ea LED epitaxial wafer (MOCVD), sebōpi sa kristale, kalafo ea mocheso oa mocheso o phahameng oa mocheso, joalo-joalo substrate, e fang terei botsitso ba mocheso o phahameng haholo (> 3000 ℃), ho hanyetsa ho bola ha tšepe e qhibilihisitsoeng, ho hanyetsa mocheso oa mocheso le litšobotsi tse tlase tsa tšilafalo, ho lelefatsa bophelo ba ts'ebeletso haholo.

Melemo ea rona ea tekheniki:
1. Ultra-high mocheso botsitso.
3880 ° C Melting Point: Tantalum carbide coating e ka sebetsa ka mokhoa o tsoelang pele le ka mokhoa o tsitsitseng ka holimo ho 2500 ° C, ho feta hōle mocheso oa ho bola oa 1200-1400 ° C oa liaparo tse tloaelehileng tsa silicon carbide (SiC).
Ho hanyetsa mocheso oa mocheso: Mocheso oa ho atolosa mocheso oa ho roala o tšoana le oa substrate ea graphite (6.6 × 10 -6 / K), 'me o khona ho mamella mocheso o potlakileng oa ho phahama le ho theoha ha mocheso o fapaneng ho feta 1000 ° C ho qoba ho phunyeha kapa ho oa.
Thepa e phahameng ea mocheso oa mocheso: Ho thatafala ha ho roala ho fihla ho 2000 HK (Vickers hardness) le elastic modulus ke 537 GPa, 'me e ntse e boloka matla a maholo a sebopeho mochesong o phahameng.

2. E thibela ho bola ka mokhoa o feteletseng ho netefatsa bohloeki ba ts'ebetso
Ho hanyetsa ka mokhoa o babatsehang: E ​​na le khanyetso e babatsehang ea likhase tse senyang tse kang H₂, NH₃, SiH₄, HCl le tšepe e qhibilihisitsoeng (mohlala, Si, Ga), e arola ka ho feletseng karolo ea graphite ho tloha tikolohong e sebetsang le ho qoba ho silafala ha carbon.
Ho falla ha litšila tse fokolang: ho hloeka ka ho fetisisa, ho thibela ka katleho ho falla ha naetrojene, oksijene le litšila tse ling ho kristale kapa epitaxial layer, ho fokotsa sekhahla sa sekoli sa li-microtubes ho feta 50%.

3. Ho nepahala ha boemo ba Nano ho ntlafatsa ts'ebetso ea ts'ebetso
Coating ho ts'oana: mamello ea botenya≤± 5%, botenya ba holim'a metsi bo fihla boemong ba nanometer, ho etsa bonnete ba hore ho na le maemo a phahameng a liphaephe kapa li-crystals tsa kgolo, phoso ea ho lumellana ha mocheso <1%.
Ho nepahala ha dimensional: e tšehetsa ± 0.05mm tolerance customization, e ikamahanya le li-wafers tsa 4-inch ho 12-inch, 'me e finyella litlhoko tsa li-interfaces tsa lisebelisoa tse nepahetseng haholo.

4. Nako e telele le e tšoarellang, ho fokotsa litšenyehelo ka kakaretso
Matla a tlamahano: Matla a maqhama pakeng tsa ho roala le graphite substrate ke ≥5 MPa, e hanyetsanang le khoholeho le ho apara, 'me bophelo ba tšebeletso bo atolosoa ka makhetlo a fetang 3.

Tšebelisano ea Mochini
E loketse bakeng sa lisebelisoa tse kholo tsa epitaxial le kristale tse kang CVD, MOCVD, ALD, LPE, joalo-joalo, tse koahelang SiC crystal kgolo (mokhoa oa PVT), GaN epitaxy, AlN substrate lokisetsa le maemo a mang.
Re fana ka mefuta e sa tšoaneng ea libopeho tsa susceptor tse kang sephara, concave, convex, joalo-joalo Botenya (5-50mm) le sebopeho sa lesoba la boemo bo ka fetoloa ho ea ka sebopeho sa cavity ho finyella Tumellano e se nang moeli le thepa.

Lisebelisoa tsa mantlha:
Khōlo ea kristale ea SiC: Ka mokhoa oa PVT, ho roala ho ka ntlafatsa kabo ea tšimo ea mocheso, ho fokotsa mefokolo, le ho eketsa sebaka sa kholo ea kristale ho feta 95%.
GaN epitaxy: Ts'ebetsong ea MOCVD, phoso ea ho lumellana ha mocheso oa susceptor ke <1%, 'me ho tsitsa ha epitaxial layer ho fihla ho ± 2%.
AlN substrate lokisetsa: Ka mocheso o phahameng (> 2000 ° C) amination reaction, TaC coating ka arola ka ho feletseng graphite substrate, qoba tšilafalo ea carbon, 'me ntlafatsa bohloeki ba AlN kristale.