I-wafer susceptor ene-TaC coating ye-G5 G10

I-CVD tantalum carbide (TaC) coating wafer susceptor ye-VET Energy eyakhelwe ngokuzimela yenzelwe izimo zokusebenza ezinzima njengokukhiqizwa kwe-semiconductor, ukukhula kwe-LED epitaxial wafer (MOCVD), isithando sokukhulisa ikristalu, ukwelashwa kokushisa kwe-vacuum okushisa okuphezulu, njll. Ngobuchwepheshe be-chemical vapor deposition (CVD), kwakheka i-tantalum carbide coating exinene nefanayo ebusweni be-graphite substrate, okunikeza ithreyi ukuzinza kokushisa okuphezulu kakhulu (>3000℃), ukumelana nokugqwala kwensimbi encibilikisiwe, ukumelana nokushaqeka kokushisa kanye nezici zokungcola okuphansi, okwandisa kakhulu impilo yesevisi.

Izinzuzo zethu zobuchwepheshe:
1. Ukuqina kokushisa okuphezulu kakhulu.
Indawo Yokuncibilika engu-3880°C: I-Tantalum carbide coating ingasebenza ngokuqhubekayo nangokuzinzile ngaphezu kuka-2500°C, idlula kakhulu izinga lokushisa lokubola elingu-1200-1400°C le-silicon carbide (SiC) coating evamile.
Ukumelana nokushaqeka kokushisa: I-coefficient yokwanda kokushisa kwengubo ifana neye-substrate ye-graphite (6.6×10 -6 /K), futhi ingamelana nokwenyuka okusheshayo kwezinga lokushisa kanye nemijikelezo yokuwa enomehluko wokushisa ongaphezu kuka-1000°C ukuze kugwenywe ukuqhekeka noma ukuwa.
Izakhiwo zemishini zokushisa okuphezulu: Ubulukhuni bokumboza bufinyelela ku-2000 HK (ubulukhuni bukaVickers) kanti i-modulus enwebekayo ingu-537 GPa, futhi isagcina amandla amahle kakhulu esakhiwo emazingeni okushisa aphezulu.

2. Imelana nokugqwala kakhulu ukuqinisekisa ubumsulwa benqubo
Ukumelana okuhle kakhulu: Inokumelana okuhle kakhulu namagesi agqwalisayo njenge-H₂, i-NH₃, i-SiH₄, i-HCl kanye nezinsimbi ezincibilikisiwe (isb. i-Si, i-Ga), ihlukanisa ngokuphelele i-graphite substrate endaweni esabelayo futhi igweme ukungcoliswa yi-carbon.
Ukufuduka kokungcola okuphansi: ubumsulwa obuphezulu kakhulu, kuvimbela ngempumelelo ukufuduka kwe-nitrogen, i-oxygen kanye nokunye ukungcola kuya kungqimba lwekristalu noma lwe-epitaxial, kunciphisa izinga lokukhubazeka kwama-microtubes ngaphezu kuka-50%.

3. Ukunemba kwezinga le-Nano ukuthuthukisa ukuhambisana kwenqubo
Ukufana kokumboza: ukubekezelelana kobukhulu≤±5%, ukuthamba komphezulu kufinyelela ezingeni le-nanometer, kuqinisekisa ukuhambisana okuphezulu kwemingcele yokukhula kwe-wafer noma i-crystal, iphutha lokufana kokushisa <1%.
Ukunemba kobukhulu: kusekela ukwenza ngokwezifiso ukubekezelelana okungu-±0.05mm, kuhambisana nama-wafer angu-4-intshi kuya kwangu-12-intshi, futhi kuhlangabezana nezidingo zezindawo zokusebenzelana zemishini ezinembe kakhulu.

4. Kuhlala isikhathi eside futhi kuqinile, kunciphisa izindleko eziphelele
Amandla okubopha: Amandla okubopha phakathi kwesembozo kanye ne-graphite substrate angama-≥5 MPa, amelana nokuguguleka nokuguguleka, futhi impilo yesevisi yandiswa izikhathi ezingaphezu kwezingu-3.

Ukuhambisana Komshini
Ifanele imishini yokukhulisa i-epitaxial kanye ne-crystal efana ne-CVD, i-MOCVD, i-ALD, i-LPE, njll., ehlanganisa ukukhula kwe-SiC crystal (indlela ye-PVT), i-GaN epitaxy, ukulungiswa kwe-substrate ye-AlN kanye nezinye izimo.
Sihlinzeka ngezinhlobo ezahlukene zezimo ze-susceptor ezifana nesicaba, esigobile, esijiyile, njll. Ubukhulu (5-50mm) kanye nokwakheka kwembobo yokuma kungalungiswa ngokwesakhiwo sembobo ukuze kufezwe ukuhambisana okungenamthungo nemishini.

Izicelo Eziyinhloko:
Ukukhula kwekristalu ye-SiC: Ngendlela ye-PVT, ukugqoka kungathuthukisa ukusatshalaliswa kwensimu yokushisa, kunciphise amaphutha onqenqemeni, futhi kwandise indawo yokukhula ephumelelayo yekristalu ibe ngaphezu kwama-95%.
I-GaN epitaxy: Enqubweni ye-MOCVD, iphutha lokufana kokushisa kwe-susceptor liyi-<1%, futhi ukuqina kwengqimba ye-epitaxial kufinyelela ku-±2%.
Ukulungiswa kwe-substrate ye-AlN: Ekusabeleni kokushisa okuphezulu (>2000°C), i-TaC coating ingahlukanisa ngokuphelele i-substrate ye-graphite, igweme ukungcoliswa kwe-carbon, futhi ithuthukise ubumsulwa be-AlN crystal.