Wafer susceptor nwere mkpuchi TaC maka G5 G10

VET Energy si onwe mepụtara CVD tantalum carbide (TaC) mkpuchi wafer susceptor e mere maka obi ọjọọ na-arụ ọrụ ọnọdụ dị ka semiconductor n'ichepụta, LED epitaxial wafer ibu (MOCVD), kristal ibu ọkụ, elu-okpomọkụ agụụ okpomọkụ ọgwụgwọ, wdg Site chemical vepor deposition (CVD) technology, a ok na mkpuchi na-emepụta n'elu subgraphite na carbide tantalum. ultra-elu okpomọkụ kwụsie ike (> 3000 ℃), iguzogide mgbaze metal corrosion, thermal ujo eguzogide na ala mmetọ àgwà, budata ịgbatị ndụ ọrụ.

Uru teknụzụ anyị:
1. Ultra-elu okpomọkụ kwụsie ike.
3880C Na-agbaze Ebe: mkpuchi Tantalum carbide nwere ike ịrụ ọrụ na-aga n'ihu ma kwụsie ike karịa 2500 ° C, karịa 1200-1400 ° C decomposition okpomọkụ nke mkpuchi silicon carbide (SiC).
Mgbochi ujo na-ekpo ọkụ: Ọnụ ọgụgụ mgbasawanye ọkụ nke mkpuchi na-adaba na nke graphite mkpụrụ (6.6 × 10 -6 / K), ma nwee ike iguzogide okpomọkụ ngwa ngwa na ọdịda cycles na okpomọkụ dị iche karịa 1000 ° C iji zere ịgbawa ma ọ bụ daa.
Ihe eji arụ ọrụ okpomọkụ dị elu: ike mkpuchi mkpuchi ruru 2000 HK (ike siri ike nke Vickers) yana modulus na-agbanwe bụ 537 GPa, ọ ka na-ejigide ike nhazi dị mma na oke okpomọkụ.

2. Nke ukwuu corrosion-eguzogide iji hụ na usoro ịdị ọcha
Nguzogide dị oke mma: Ọ nwere ezigbo nguzogide ikuku na-emebi emebi dị ka H₂, NH₃, SiH₄, HCl na ọla a wụrụ awụ (dịka Si, Ga), na-ekewapụta mkpụrụ graphite kpamkpam na gburugburu ebe na-arụ ọrụ yana zere mmetọ carbon.
Mbugharị adịghị ọcha dị ala: ịdị ọcha dị oke elu, na-egbochi mbugharị nke nitrogen, oxygen na adịghị ọcha ndị ọzọ na oyi akwa kristal ma ọ bụ epitaxial, na-ebelata ntụpọ nke microtubes karịa 50%.

3. Nano-larịị ziri ezi iji melite usoro nhazi
Ịdị n'otu mkpuchi mkpuchi: nha nha ≤ ± 5%, ịdị elu elu ruru nanometer larịị, na-eme ka nkwekọ dị elu nke wafer ma ọ bụ oke uto kristal, njehie ịdị n'otu ọkụ <1%.
Akụkụ ziri ezi: na-akwado nhazi nnabata ± 0.05mm, na-adaba na 4-inch ruo 12-inch wafers, ma na-egbo mkpa nke oghere akụrụngwa dị elu.

4. Ogologo oge na-adịgide adịgide, na-ebelata ụgwọ ọrụ n'ozuzu ya
Ike njide: Ike njikọ dị n'etiti mkpuchi na mkpụrụ graphite bụ ≥5 MPa, na-eguzogide mmebi na iyi, na ndụ ọrụ na-agbatị karịa ugboro 3.

Ndakọrịta igwe
Kwesịrị ekwesị maka akụrụngwa epitaxial na kristal dị ka CVD, MOCVD, ALD, LPE, wdg, na-ekpuchi uto SiC crystal (usoro PVT), GaN epitaxy, nkwadebe mkpụrụ osisi AlN na ọnọdụ ndị ọzọ.
Anyị na-enye ụdị dị iche iche nke susceptor dị ka ewepụghị, concave, convex, wdg. Enwere ike imezi ọkpụrụkpụ (5-50mm) na nhazi oghere dị ka oghere oghere iji nweta ndakọrịta na-enweghị ntụpọ na akụrụngwa.

Ngwa ndị isi:
Uto kristal SiC: Na usoro PVT, mkpuchi ahụ nwere ike ịkwalite nkesa ebe okpomọkụ, belata ntụpọ ihu, ma mee ka mpaghara uto dị mma nke kristal karịa 95%.
GaN epitaxy: N'ime usoro MOCVD, njehie na-ahụ maka ịdị n'otu nke susceptor bụ <1%, na nkwụsi ike nke oke oyi akwa epitaxial ruru ± 2%.
Nkwadebe nke mkpụrụ osisi AlN: N'ime oke okpomọkụ (> 2000 ° C) mmeghachi omume amination, mkpuchi TaC nwere ike kewapụ mkpụrụ graphite kpamkpam, zere mmetọ carbon, ma melite ịdị ọcha nke kristal AlN.