Gusiga karubide ya silikoni ni iki?

Igipfukisho cya silicon carbide,Ikoreshwa rya SiC coating, risobanura inzira yo gushyira urwego rwa silicon carbide ku buso hakoreshejwe uburyo nka Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), cyangwa thermal spraying. Iyi silicon carbide ceramic coating yongera imiterere y'ubuso bw'ibintu bitandukanye binyuze mu gutanga ubudahangarwa budasanzwe bwo kwangirika, kudahindagurika k'ubushyuhe, no kurinda ingese. SiC izwiho imiterere yayo idasanzwe y'umubiri n'imiti, harimo ahantu hanini ho gushonga (hafi 2700℃), ubukana bukabije (Mohs scale 9), ubudahangarwa bwiza bwo kurwanya ingese no gushonga, hamwe n'imikorere idasanzwe yo gukuramo umwuka.

Ibyiza by'ingenzi byo gusiga silicon carbide mu nganda

Bitewe n'ibi bintu, irangi rya silicon carbide rikoreshwa cyane mu bintu bitandukanye nko mu kirere, ibikoresho by'intwaro, no gutunganya ibikoresho bya semiconductor. Mu bidukikije bikomeye, cyane cyane mu ntera ya 1800-2000℃, irangi rya SiC rigaragaza ubushyuhe butangaje no kudacika intege, bigatuma riba ryiza cyane mu bikorwa bikorerwa mu bushyuhe bwinshi. Ariko, silicon carbide yonyine ntigira imiterere ikenewe mu bikorwa byinshi, bityo uburyo bwo gusiga bukoreshwa kugira ngo bukoreshe imiterere yayo yihariye hatabayeho kwangiza imbaraga z'ibice. Mu nganda zikora semiconductor, ibikoresho bya silicon carbide bitanga uburinzi bwizewe n'imikorere idahindagurika mu bikoresho bikoreshwa mu bikorwa bya MOCVD.

Uburyo Busanzwe bwo Gutegura Irangi rya Silicon Carbide

Ⅰ● Gusiga umwuka wa silika (CVD) mu gikoresho cyo gusiga umwuka wa silika

Muri ubu buryo, irangi rya SiC rikorwa binyuze mu gushyira substrates mu cyumba cy’ibisubizo, aho methyltrichlorosilane (MTS) ikora nk'intangiriro. Mu bihe bigenzurwa—ubusanzwe 950-1300°C n'umuvuduko mubi—MTS irabora, hanyuma silicon carbide ishyirwa hejuru. Ubu buryo bwo gusiga CVD SiC butuma irangi ryinshi, rimwe kandi rifatanye neza, rikaba ryiza cyane mu bikorwa byo mu rwego rwa semiconductor n'iby'indege.

Ⅱ● Uburyo bwo guhindura imashini mbere y'igihe (Polymer Impregnation na Pyrolysis – PIP)

Ubundi buryo bwiza bwo gusiga amavuta ya silicon carbide ni uburyo bwo guhindura ibintu mbere y’igihe, bukubiyemo gushyira icyitegererezo cyateguwe mbere mu gikoresho cya keramike. Nyuma yo gusukura ikigega cyo guteramo umwuka no gushyiramo igitutu ku gikoresho, icyitegererezo kirashyuha, bigatuma icyuma cya silicon carbide gikonjeshwa. Ubu buryo bukundwa cyane ku bice bisaba ubugari bumwe bwo gusiga no kudashira neza.

Imiterere ifatika ya Silicon Carbide Coating

Irangi rya silicon carbide rigaragaza imiterere ituma riba ryiza cyane mu nganda. Muri iyo miterere harimo:

Ubushobozi bwo gutwara ubushyuhe: 120-270 W/m·K
Igipimo cy'ubushyuhe: 4.3 × 10^^(-6)/K (kuri 20~800℃)
Ubushobozi bw'amashanyarazi: 10^⁵– 10^⁶Ω·cm
Ubukomere: Igipimo cya Mohs 9

Imikoreshereze ya Silicon Carbide Coating

Mu nganda zikora ibikoresho bya semiconductor, irangi rya silicon carbide kuri MOCVD n'izindi nzira zikoresha ubushyuhe bwinshi ririnda ibikoresho by'ingenzi, nka reactors na susceptors, binyuze mu gutanga ubudahangarwa n'ubushyuhe bwinshi. Mu kirere no mu kwirwanaho, irangi rya silicon carbide ceramic rikoreshwa ku bice bigomba kwihanganira ingaruka zihuse n'ibidukikije byangiza. Byongeye kandi, irangi rya silicon carbide cyangwa irangi rishobora no gukoreshwa ku bikoresho by'ubuvuzi bisaba kuramba mu buryo bwo gusukura.

Kuki wahitamo Silicon Carbide Coating?

Bitewe n’amateka yo kongera igihe cy’ibice, irangi rya silicon carbide ritanga kuramba ku buryo budasanzwe no kudahungabana k’ubushyuhe, bigatuma rihendutse mu gihe kirekire. Mu guhitamo ubuso butwikiriwe na silicon carbide, inganda zungukira ku kugabanuka kw’ikiguzi cyo kubungabunga, kwiyongera kw’uburyo ibikoresho byizewe, no kunoza imikorere.

Kuki wahitamo INGUFU ZA VET?

VET ENERGY ni uruganda rw’umwuga rukora ibikoresho byo gusiga karubide bya silikoni mu Bushinwa. Ibikoresho by’ingenzi byo gusiga karubide bya silikoni birimo icyuma gishyushya karubide cya silikoni,CVD Silicon Carbide Coating MOCVD Susceptor, Imodoka ya MOCVD Graphite ifite CVD SiC Coating, Ibikoresho by'ibanze bya grafiti bifite SiC, Substrate ya Graphite ya Silicon Carbide ikoreshwa mu gukata ibikoresho bya semiconductor,SiC Coating/Coated Graphite Substrate/Agasanduku k'ibikoresho bya semiconductor, Ibumba ry'ubwato rya CFC rikozwe muri CVD SiC rikozwe muri karubone-karuboneVET ENERGY yiyemeje gutanga ibisubizo by'ikoranabuhanga rigezweho n'ibicuruzwa ku nganda za semiconductor. Twiringiye by'ukuri kuzaba umufatanyabikorwa wawe w'igihe kirekire mu Bushinwa.