Mai Rage Zane-zanen Epitaxy na Kamfanin China SiC Mai Rufi MOCVD

Kamfanin China Mai Rufi SiC Graphite MOCVD Epitaxy Susceptor Hoton da aka Fito

Takaitaccen Bayani:

Tsarkaka < 5ppm
‣ Daidaito mai kyau tsakanin shan kwayoyi
‣ Babban yawa da mannewa
‣ Kyakkyawan juriya ga gurɓatawa da kuma juriya ga carbon

‣ Ƙirƙirar ƙwararru
‣ Takaitaccen lokaci na gabatarwa
‣ Samar da kayayyaki mai dorewa
‣ Kula da inganci da ci gaba da haɓakawa

Epitaxy na GaN akan Sapphire(RGB/Mini/Micro LED);
Epitaxy na GaN akan Si Substrate(UVC);
Epitaxy na GaN akan Si Substrate(Na'urar Lantarki);
Epitaxy na Si akan Si Substrate(Da'irar da aka haɗa);
Epitaxy na SiC akan SiC Substrate(Substrate);
Epitaxy na InP akan InP

Aika mana imel Sauke shi azaman PDF

Cikakken Bayani game da Samfurin

Alamun Samfura

Siyan MOCVD Susceptor mai inganci akan layi a China

Wafer yana buƙatar wucewa ta matakai da dama kafin ya shirya don amfani a cikin na'urorin lantarki. Wani muhimmin tsari shine silicon epitaxy, inda ake ɗaukar wafers ɗin akan susceptors na graphite. Halaye da ingancin susceptors suna da tasiri mai mahimmanci akan ingancin layin epitaxial na wafer.

Ga matakan adana fim ɗin siriri kamar epitaxy ko MOCVD, VET tana samar da kayan aikin graphite masu tsarki waɗanda ake amfani da su don tallafawa substrates ko "wafers". A cikin aikin, wannan kayan aiki, masu hana epitaxy ko dandamalin tauraron dan adam na MOCVD, ana fara amfani da su ne a yanayin adanawa:

● Zafin jiki mai yawa.
● Babban injin tsabtace iska.
● Amfani da abubuwan da ke haifar da iskar gas mai ƙarfi.
● Babu gurɓatawa, rashin barewa.
● Juriyar ƙarfi ga acid yayin ayyukan tsaftacewa

VET Energy ita ce ainihin mai ƙera samfuran graphite da silicon carbide na musamman waɗanda ke da shafi don masana'antar semiconductor da photovoltaic. Ƙungiyarmu ta fasaha ta fito ne daga manyan cibiyoyin bincike na cikin gida, kuma za su iya samar muku da ƙarin mafita na kayan aiki na ƙwararru.

Muna ci gaba da haɓaka hanyoyin ci gaba don samar da kayan aiki masu inganci, kuma mun yi amfani da fasahar mallakar fasaha ta musamman, wadda za ta iya sa haɗin da ke tsakanin murfin da substrate ya yi ƙarfi kuma ya zama ba shi da sauƙin rabuwa.

Fasaloli na samfuranmu:

1. Juriyar iskar shaka mai zafi har zuwa 1700℃.
2. Tsarkakakken tsarki da daidaiton zafi
3. Kyakkyawan juriya ga tsatsa: acid, alkali, gishiri da kuma sinadaran halitta.
4. Babban tauri, ƙaramin surface, ƙananan barbashi.
5. Tsawon rai da kuma tsawon rai

CVD SiC Abubuwan asali na zahiri na CVD SiCshafi
Kadara	Darajar da Aka Saba
Tsarin Crystal	FCC β phase polycrystalline, galibi (111) yanayin
Yawan yawa	3.21 g/cm³
Tauri	Taurin Vickers 2500 (nauyi 500g)
SiZe na hatsi	2 ~ 10μm
Tsarkakewar Sinadarai	99.99995%
Ƙarfin Zafi	640 J·kg^-1·K^-1
Zafin Sublimation	2700℃
Ƙarfin Lankwasawa	415 MPa RT maki 4
Modulus na Young	430 GPA lanƙwasa 4pt, 1300℃
Tsarin kwararar zafi	300W·m^-1·K^-1
Faɗaɗawar Zafi (CTE)	4.5×10^-6K^-1