Mai ƙera China SiC Mai Rufin Graphite MOCVD Epitaxy Susceptor

Maƙerin China SiC Mai Rufin Graphite MOCVD Epitaxy Susceptor Featured Hoton

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‣ Kyakkyawan doping uniformity
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‣ Short lokacin jagora
‣ Bargarin wadata
‣ Kula da inganci da ci gaba da haɓakawa

Epitaxy na GaN akan Sapphire(RGB / Mini / Micro LED);
Epitoxy na GaN akan Si Substrate(UVC);
Epitoxy na GaN akan Si Substrate(Na'urar Lantarki);
Epitoxy na Si akan Si Substrate(Haɗin kai);
Epitoxy na SiC akan SiC Substrate(Substrate);
Epitaxy na InP akan InP

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MOCVD Susceptor mai inganci yana siyan kan layi a China

Wafer yana buƙatar wucewa ta matakai da yawa kafin a shirya don amfani a cikin na'urorin lantarki. Ɗaya mai mahimmanci tsari shine silicon epitaxy, wanda ake ɗaukar wafers a kan graphite susceptors. Kaddarorin da ingancin masu kamuwa da cuta suna da tasiri mai mahimmanci akan ingancin layin epitaxial na wafer.

Don matakan saka fim na bakin ciki irin su epitaxy ko MOCVD, VET tana ba da kayan aikin zane-zane masu tsafta da ake amfani da su don tallafawa kayan maye ko "wafers". A cikin jigon tsari, wannan kayan aiki, masu susceptors na epitaxy ko dandamali na tauraron dan adam na MOCVD, an fara gabatar da su ga yanayin ajiya:

● Yawan zafin jiki.
● Babban injin.
● Yin amfani da abubuwan da ke haifar da iskar gas.
● Rashin gurɓataccen abu, rashin kwasfa.
● Juriya ga acid mai ƙarfi yayin ayyukan tsaftacewa

VET Energy shine ainihin masana'anta na samfuran graphite na musamman da samfuran silicon carbide tare da rufi don masana'antar semiconductor da masana'antar hoto. Ƙungiyarmu ta fasaha ta fito ne daga manyan cibiyoyin bincike na gida, za su iya samar da ƙarin ƙwararrun kayan aiki don ku.

Muna ci gaba da haɓaka matakai na ci gaba don samar da ƙarin kayan haɓaka, kuma mun yi aiki da fasaha ta keɓance mai ƙima, wanda zai iya sanya haɗin kai tsakanin shafi da abin da ke ƙasa ya fi ƙarfin kuma ba shi da haɗari ga ɓarna.

Siffofin samfuranmu:

1. High zafin jiki hadawan abu da iskar shaka juriya har zuwa 1700 ℃.
2. Babban tsafta da daidaituwar thermal
3. Excellent lalata juriya: acid, alkali, gishiri da kuma Organic reagents.
4. Babban taurin, m surface, lafiya barbashi.
5. Tsawon rayuwar sabis kuma mafi dorewa

CVD SiC Asalin kaddarorin jiki na CVD SiCshafi
Dukiya	Mahimmanci Na Musamman
Tsarin Crystal	FCC β lokaci polycrystalline, yafi (111) fuskantarwa
Yawan yawa	3.21g/cm³
Tauri	2500 Vickers taurin (500g kaya)
Girman SiZe	2 ~ 10 μm
Tsaftar Sinadari	99.99995%
Ƙarfin zafi	640kg^-1· K^-1
Zazzabi Sublimation	2700 ℃
Ƙarfin Flexural	415 MPa RT 4-point
Modul na Young	430 Gpa 4pt lankwasa, 1300 ℃
Thermal Conductivity	300 w·m^-1· K^-1
Fadada thermal (CTE)	4.5×10^-6K^-1