Soo-saaraha Shiinaha SiC Graphite Dahaarka leh MOCVD Epitaxy Suscepter

Sawir muuqada ah oo muujinaya soo saaraha Shiinaha ee SiC Graphite dahaarka leh MOCVD Epitaxy Susceptor

Sharaxaad Gaaban:

Nadiifnimo < 5ppm
‣ Midaysanaan wanaagsan oo ku saabsan isticmaalka daawada
‣ Cufnaan iyo dhegdheg sare
‣ Ka-hortagga daxalka iyo iska caabbinta kaarboonka oo wanaagsan

‣ Habayn xirfadeed
‣ Waqti gaaban oo lagu dhammaystirayo
‣ Sahay deggan
‣ Xakamaynta tayada iyo horumarinta joogtada ah

Epitaxy of GaN on Sapphire(Nalalka RGB/Mini/Micro LED);
Epitaxy-ga GaN ee ku yaal Substrate-ka Si(UVC);
Epitaxy-ga GaN ee ku yaal Substrate-ka Si(Qalabka Elektarooniga ah);
Epitaxy of Si oo ku taal Substrate-ka Si(Wareeg isku dhafan);
Epitaxy-ga SiC ee Substrate-ka SiC(Substrate);
Epitaxy-ga InP ee InP-ga

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Faahfaahinta Badeecada

Calaamadaha Alaabta

Iibsiga suuxdinta MOCVD tayo sare leh ee khadka tooska ah ee Shiinaha

Waferku wuxuu u baahan yahay inuu maro dhowr tallaabo ka hor inta uusan diyaar u noqon in loo isticmaalo aaladaha elektaroonigga ah. Mid ka mid ah hababka muhiimka ah waa silicon epitaxy, kaas oo waferku lagu qaado susceptors-ka graphite. Sifooyinka iyo tayada susceptors-ku waxay saameyn muhiim ah ku leeyihiin tayada lakabka epitaxial-ka waferka.

Marxaladaha kaydinta filimada khafiifka ah sida epitaxy ama MOCVD, VET waxay bixisaa qalab garaafeed oo aad u saafi ah oo loo isticmaalo in lagu taageero substrates-ka ama "wafers". Aasaaska habka, qalabkan, susceptors-ka epitaxy ama goobaha dayax-gacmeedka ee MOCVD, ayaa marka hore la mariyaa jawiga kaydinta:

● Heerkul sare.
● Faaruq badan.
● Isticmaalka waxyaabaha gaaska ee gardarrada leh.
● Wax wasakh ah ma jiraan, diirka oo aan lahayn.
● Iska caabbinta asiidhyada xooggan inta lagu jiro hawlaha nadiifinta

VET Energy waa soo saaraha dhabta ah ee alaabada graphite iyo silicon carbide ee loo habeeyey oo leh dahaadh loogu talagalay warshadaha semiconductor iyo photovoltaic. Kooxdayada farsamo waxay ka timid hay'adaha cilmi-baarista ee ugu sarreeya gudaha, waxayna ku siin karaan xalal xirfadeed oo dheeraad ah.

Waxaan si joogto ah u horumarinnaa habab horumarsan si aan u bixinno agab horumarsan, waxaana ka shaqeynay tignoolajiyad gaar ah oo shati leh, taas oo ka dhigi karta isku xirka u dhexeeya dahaarka iyo substrate-ka mid adag oo aan u nuglaan kala go'a.

Astaamaha alaabtayada:

1. Iska caabinta oksaydhka heerkulka sare ilaa 1700℃.
2. Nadiifnimo sare iyo isku midnimo kuleyl
3. Iska caabin aad u fiican oo daxalka ah: aashitada, alkali, milixda iyo walxaha dabiiciga ah.
4. Adkayn sare, dusha sare oo is haysta, iyo walxo yaryar.
5. Adeeg dheer iyo cimri dheer

CVD SiC Sifooyinka aasaasiga ah ee jireed ee CVD SiCdahaarka
Hantida	Qiimaha Caadiga ah
Qaab-dhismeedka Crystal	FCC β wejiga polycrystalline, inta badan (111) jihada
Cufnaanta	3.21 g/cm³
Adkaanta	Adkaysiga Vickers 2500 (500g oo culays ah)
Xaddiga Badarka	2 ~ 10μm
Nadiifinta Kiimikada	99.99995%
Awoodda Kulaylka	640 J·kg^-1·K^-1
Heerkulka Sublimation	2700℃
Xoogga Dabacsanaan	415 MPa RT 4-dhibcood
Modulus-ka Young	430 GPA 4pt laab, 1300℃
Qaboojinta Kulaylka	300W·m^-1·K^-1
Ballaarinta Kulaylka (CTE)	4.5 × 10^-6K^-1