China Manufacturer SiC Coated Graphite MOCVD Epitaxy Susceptor

Short Description:

Purity < 5ppm
‣ Good doping uniformity
‣ High density and adhesion
‣ Good anti-corrosive and carbon resistence

‣ Professional customization
‣ Short lead time
‣ Stable supply
‣ Quality control and continual improvement

Epitaxy of GaN on Sapphire (RGB/Mini/Micro LED);
Epitaxy of GaN on Si Substrate(UVC);
Epitaxy of GaN on Si Substrate(Electronical Device);
Epitaxy of Si on Si Substrate(Integrated circuit);
Epitaxy of SiC on SiC Substrate (Substrate);
Epitaxy of InP on InP

Send email to us Download as PDF

Product Detail

Product Tags

High quality MOCVD Susceptor Buy online in China

A wafer needs to pass through several steps before it is ready for use in electronic devices. One important process is silicon epitaxy, in which the wafers are carried on graphite susceptors. The properties and quality of the susceptors have a crucial effect on the quality of the wafer’s epitaxial layer.

For thin film deposition phases such as epitaxy or MOCVD, VET supplies ultra-pure graphiteequipment used to support substrates or "wafers". At the core of the process, this equipment, epitaxy susceptors or satellite platforms for the MOCVD, are first subjected to the deposition environment:

High temperature.
High vacuum.
Use of aggressive gaseous precursors.
Zero contamination, absence of peeling.
Resistance to strong acids during cleaning operations

VET Energy is the real manufacturer of customized graphite and silicon carbide products with coating for semiconductor and photovoltaic industry. Our technical team comes from top domestic research institutions, can provide more professional material solutions for you.

We continuously develop advanced processes to provide more advanced materials, and have worked out an exclusive patented technology, which can make the bonding between the coating and the substrate tighter and less prone to detachment.

Features of our products:

1. High temperature oxidation resistance up to 1700℃.
2. High purity and thermal uniformity
3. Excellent corrosion resistance: acid, alkali, salt and organic reagents.
4. High hardness, compact surface, fine particles.
5. Longer service life and more durable

CVD SiC薄膜基本物理性能 Basic physical properties of CVD SiC coating
性质 / Property	典型数值 / Typical Value
晶体结构 / Crystal Structure	FCC β phase 多晶，主要为（111）取向
密度 / Density	3.21 g/cm³
硬度 / Hardness	2500 维氏硬度（500g load）
晶粒大小 / Grain SiZe	2~10μm
纯度 / Chemical Purity	99.99995%
热容 / Heat Capacity	640 J·kg^-1·K^-1
升华温度 / Sublimation Temperature	2700℃
抗弯强度 / Flexural Strength	415 MPa RT 4-point
杨氏模量 / Young' s Modulus	430 Gpa 4pt bend, 1300℃
导热系数 / Thermal Conductivity	300W·m^-1·K^-1
热膨胀系数 / Thermal Expansion(CTE)	4.5×10^-6K^-1