Ubushinwa bukora SiC Coated Graphite MOCVD Epitaxy Susceptor

Ubushinwa bukora SiC Yashushanyijeho Graphite MOCVD Epitaxy Susceptor Igishusho

Ibisobanuro bigufi:

Isuku <5ppm
Uniform Guhuza neza doping
Ens Ubucucike bukabije no gufatana
‣ Kurwanya ruswa no kurwanya karubone

Custom Guhitamo umwuga
Time Igihe gito cyo kuyobora
Supply Gutanga ibintu bihamye
Control Kugenzura ubuziranenge no gukomeza gutera imbere

Epitaxy ya GaN kuri safiro(RGB / Mini / Micro LED);
Epitaxy ya GaN kuri Si Substrate(UVC);
Epitaxy ya GaN kuri Si Substrate(Igikoresho cya elegitoroniki);
Epitaxy ya Si kuri Si Substrate(Inzira ihuriweho);
Epitaxy ya SiC kuri Substrate ya SiC(Substrate);
Epitaxy ya InP kuri InP

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Ibicuruzwa birambuye

Ibicuruzwa

Ubwiza bwa MOCVD Susceptor igura kumurongo mubushinwa

Wafer ikeneye kunyura munzira nyinshi mbere yuko yitegura gukoreshwa mubikoresho bya elegitoroniki. Inzira imwe yingenzi ni silicon epitaxy, aho wafers ikorerwa kuri susite ya grafite. Imiterere nubwiza bwa susceptors bigira ingaruka zikomeye kumiterere ya epitaxial ya wafer.

Kubice bya firime yoroheje nka epitaxy cyangwa MOCVD, VET itanga ultra-pure graphiteequothing ikoreshwa mugushigikira substrate cyangwa "wafers". Intandaro yimikorere, ibi bikoresho, epitaxy susceptors cyangwa satelite ya MOCVD, babanje gukorerwa ibidukikije:

Temperature Ubushyuhe bwo hejuru.
Acu Icyuho kinini.
● Gukoresha gaze ya gazi ibanziriza.
Kwanduza zeru, kubura gukuramo.
Kurwanya aside ikomeye mugihe cyo gukora isuku

VET Ingufu nukuri gukora ibicuruzwa byabugenewe bya grafite na silicon karbide hamwe na coating ya semiconductor ninganda zifotora. Itsinda ryacu rya tekinike rituruka mubigo byubushakashatsi bwo murugo, birashobora kuguha ibisubizo byumwuga kubwawe.

Dukomeje guteza imbere inzira ziterambere kugirango dutange ibikoresho byinshi byateye imbere, kandi twakoze tekinoroji yihariye yemewe, ishobora gutuma isano iri hagati yikingirizo na substrate ikomera kandi idakunda gutandukana.

Ibiranga ibicuruzwa byacu:

1. Ubushyuhe bwo hejuru bwa okiside irwanya 1700 ℃.
2. Isuku ryinshi nuburinganire bwumuriro
3. Kurwanya ruswa nziza: aside, alkali, umunyu na reagent.
4. Gukomera cyane, hejuru yuzuye, ibice byiza.
5. Kuramba kumurimo muremure kandi biramba

CVD SiC Ibyingenzi bifatika bya CVD SiCgutwikira
Umutungo	Agaciro gasanzwe
Imiterere ya Crystal	FCC β icyiciro polycrystalline, cyane cyane (111) icyerekezo
Ubucucike	3.21 g / cm³
Gukomera	2500 Gukomera kwa Vickers （500g umutwaro）
Ingano SiZe	2 ~ 10 mm
Ubuziranenge bwa Shimi	99.99995%
Ubushyuhe	640 J · kg^-1· K.^-1
Ubushyuhe bwo hejuru	2700 ℃
Imbaraga zoroshye	415 MPa RT amanota 4
Umusore Modulus	430 Gpa 4pt yunamye, 1300 ℃
Amashanyarazi	300W · m^-1· K.^-1
Kwagura Ubushyuhe (CTE)	4.5 × 10^-6K^-1