Umucuruzi w'Ubushinwa witwa SiC Coated Graphite MOCVD Epitaxy Susceptor

Ishusho y'umusaruro wa SiC Coated Graphite MOCVD Epitaxy Susceptor w'Umushinwa

Ibisobanuro bigufi:

Isuku < 5ppm
‣ Uburyo bwiza bwo gukoresha imiti igabanya ubukana bw'ibiyobyabwenge
‣ Ubucucike bwinshi n'ubufatanye
‣ Irwanya kwangirika no kurwanya karubone neza

‣ Guhindura imiterere y'umwuga
‣ Igihe gito cyo kwishyura
‣ Itangwa ry'ibikoresho rihoraho
‣ Kugenzura ubuziranenge no kunoza imikorere

Epitaxy ya GaN kuri Safiro(RGB/Mini/Micro LED);
Epitaxy ya GaN kuri Si Substrate(UVC);
Epitaxy ya GaN kuri Si Substrate(Igikoresho cy'ikoranabuhanga);
Epitaxy ya Si kuri Si Substrate(Urugendo rw'itumanaho ruhujwe);
Epitaxy ya SiC kuri SiC Substrate(Icyambu cy'ubutaka);
Epitaxy ya InP kuri InP

Ohereza imeri kuri twe Kuramo nka PDF

Ibisobanuro birambuye ku gicuruzwa

Ibirango by'ibicuruzwa

Imodoka nziza cyane za MOCVD Susceptor zigura kuri interineti mu Bushinwa

Agace k'umugati gagomba kunyuramo intambwe nyinshi mbere yuko gakoreshwa mu bikoresho by'ikoranabuhanga. Uburyo bumwe bw'ingenzi ni silicon epitaxy, aho utu duce dutwarwa ku duce twa grafiti. Imiterere n'ubwiza bw'utu duce bigira ingaruka zikomeye ku bwiza bw'urwego rwa epitaxial rwa wafer.

Ku bijyanye no gushyiramo icyuma gito nko muri epitaxy cyangwa MOCVD, VET itanga ibikoresho bya grafitite bikoreshwa mu gushyigikira substrates cyangwa "wafers". Mu by'ingenzi by'iyi gahunda, ibi bikoresho, epitaxy susceptors cyangwa satellite platforms za MOCVD, bibanza gushyirwa mu bidukikije:

● Ubushyuhe bwinshi.
● Imashini ikoresha umwuka mwinshi.
● Gukoresha imyuka itera imbaraga.
● Nta kwanduzwa na gato, nta gushishwa kw'ibishishwa.
● Ubudahangarwa ku aside ikomeye mu gihe cyo gusukura

VET Energy niyo sosiyete nyayo ikora ibikoresho bya grafiti na silicon carbide byihariye hamwe n’imvange y’ibikoresho bya semiconductor na photovoltaic. Itsinda ryacu rya tekiniki rituruka mu bigo bikomeye by’ubushakashatsi mu gihugu, rishobora kuguha ibisubizo by’ibikoresho by’umwuga kuri wewe.

Dukomeza guteza imbere inzira zigezweho kugira ngo dutange ibikoresho bigezweho, kandi twakoze ikoranabuhanga ryihariye rifite uburenganzira bwo gukora patenti, rishobora gutuma isano iri hagati y’igitambaro n’icyuma gifunga ibintu irushaho gukomera kandi ikagira ingaruka nke ku buryo bitavangwa.

Ibiranga ibicuruzwa byacu:

1. Ubudahangarwa ku bushyuhe bwinshi bwo kuzura kugeza kuri 1700°C.
2. Ubuziranenge bwinshi n'ubushyuhe bungana
3. Irwanya ingese neza cyane: aside, alkali, umunyu n'ibikomoka ku bimera.
4. Ubukomere bwinshi, ubuso buto, uduce duto.
5. Igihe kirekire cyo gukora kandi kiramba kurushaho

CVD SiC Imiterere y'ibanze ya CVD SiCgusiga
Umutungo	Agaciro Gasanzwe
Imiterere ya kristu	Icyerekezo cya FCC β phase polycrystalline, ahanini (111)
Ubucucike	3.21 g/cm³
Ubukomere	Uburemere bwa Vickers 2500 (umutwaro wa garama 500)
Ingano y'ibinyampeke	2 ~ 10μm
Ubuziranenge bw'ibinyabutabire	99.99995%
Ubushobozi bwo gushyuha	640 J·kg^-1·K^-1
Ubushyuhe bwo gushyushya	2700℃
Imbaraga zo Kongera Uburemere	415 MPa RT ifite amanota 4
Modulus ya Young	430 Gpa 4pt bend, 1300℃
Ubushobozi bwo gutwara ubushyuhe	300W·m^-1·K^-1
Kwagura Ubushyuhe (CTE)	4.5×10^-6K^-1