Saina Gaosi SiC SiC Coated Graphite MOCVD Epitaxy Susceptor

Saina Faumea SiC Coated Graphite MOCVD Epitaxy Susceptor Ata Fa'aalia

Fa'amatalaga Puupuu:

Mama <5ppm
‣ Tulaga lelei o le doping
‣ Maualuga maualuga ma pipii
‣ Lelei anti-corrosive ma carbon resistance

‣ Fa'apitoa fa'apitoa
‣ Pu'upu'u taimi ta'ita'i
‣ Sapalai mautu
‣ Puleaina lelei ma faʻaleleia atili

Epitaxy o GaN i luga o le Safaira(RGB/Mini/Micro LED);
Epitaxy o GaN i luga ole Si Substrate(UVC);
Epitaxy o GaN i luga ole Si Substrate(Mea Faaeletise);
Epitaxy o Si i luga ole Si substrate(Fa'asa'o fa'atasi);
Epitaxy o le SiC i luga ole SiC Substrate(Failalo);
Epitaxy o le InP i luga ole InP

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Fa'amatalaga Oloa

Faailoga o oloa

Ole maualuga ole MOCVD Susceptor fa'atau ile initaneti ile Saina

E mana'omia ona uia e le wafer ni laasaga se tele a'o le'i sauni mo le fa'aoga i masini fa'aeletoroni. O se tasi o faiga taua o le silicon epitaxy, lea o loʻo faʻapipiʻiina ai le graphite susceptors. O meatotino ma le lelei o susceptors e iai sona aafiaga taua i le lelei o le epitaxial layer o le wafer.

Mo vaega fa'apipi'i ata manifinifi e pei o le epitaxy po'o le MOCVD, e tu'uina atu e le VET ni masini graphite mama e fa'aaogaina e lagolago ai mea'ai po'o "wafers". I le totonugalemu o le faagasologa, o nei meafaigaluega, epitaxy susceptors poʻo satelite faʻavae mo le MOCVD, e muamua tuʻuina atu i le siosiomaga faʻapipiʻi:

● maualuga le vevela.
● Vacuum maualuga.
● Fa'aaogāina o mea kasa fa'amata'i.
● E leai se afaina, leai se pa'u.
● Tete'e atu i acids malolosi a'o fa'amama

O le VET Energy o le gaosiga moni o graphite faʻapitoa ma oloa carbide silicon ma faʻapipiʻi mo semiconductor ma photovoltaic alamanuia. O la matou 'au fa'atekinisi e sau mai fa'alapotopotoga su'esu'e fa'apitonu'u pito i luga, e mafai ona tu'uina atu fa'afitauli fa'apitoa fa'apitoa mo oe.

O lo'o fa'aauau pea ona matou fa'atupuina faiga fa'agasolo e tu'uina atu ai mea e sili atu ona maualuga, ma ua fa'atinoina se tekonolosi pateni fa'apitoa, lea e mafai ona fa'amalosia atili ai le so'otaga i le va o le fa'apipi'i ma le mea fa'apipi'i ma fa'aitiitia ai le fa'ateteleina.

Vaega oa tatou oloa:

1. maualuga le vevela oxidation tetee atu i le 1700 ℃.
2. maualuga mama ma vevela tutusa
3. Lelei le fa'afefeteina: acid, alkali, masima ma meaola fa'aola.
4. Maaa maualuga, faʻapipiʻi luga, vaega laiti.
5. Le soifua tautua umi ma sili atu le umi

CVD SiC Meatino fa'aletino autu o le CVD SiCufiufi
Meatotino	Taua masani
Fauga tioata	FCC β vaega polycrystalline, e masani lava (111) orientation
Malosi	3.21 g/cm³
Malosi	2500 Vickers malo (500g uta)
Fua o Saito	2~10μm
Vailaau Mama	99.99995%
Malosiaga vevela	640 J·kg^-1·K^-1
Sulimation Temperature	2700 ℃
Malosi Fa'asusu	415 MPa RT 4-point
Young's Modulus	430 Gpa 4pt pi'o, 1300 ℃
Amioga vevela	300W·m^-1·K^-1
Fa'alauteleina o le vevela(CTE)	4.5×10^-6K^-1