Wopanga SiC Wokutidwa ndi Graphite MOCVD Epitaxy Susceptor waku China

Wopanga SiC Wokutidwa ndi Graphite MOCVD Wopanga ku China Epitaxy Susceptor Chithunzi Chodziwika

Kufotokozera Kwachidule:

Chiyero < 5ppm
‣ Kugwirizana kwabwino kwa doping
‣ Kuchulukana kwambiri ndi kumamatira
‣ Yabwino yotsutsa kuwononga komanso yotsutsa mpweya

‣ Kusintha kwaukadaulo
‣ Nthawi yochepa yoperekera
‣ Kupereka kokhazikika
‣ Kuwongolera khalidwe ndi kusintha kosalekeza

Epitaxy ya GaN pa Sapphire(RGB/Mini/Micro LED);
Epitaxy ya GaN pa Si Substrate(UVC);
Epitaxy ya GaN pa Si Substrate(Chida Chamagetsi);
Epitaxy ya Si pa Si Substrate(Dera lolumikizidwa);
Epitaxy ya SiC pa SiC Substrate(Chigawo chapansi);
Epitaxy ya InP pa InP

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Tsatanetsatane wa Zamalonda

Ma tag a Zamalonda

Ma MOCVD Susceptor apamwamba kwambiri amagula pa intaneti ku China

Wafer iyenera kudutsa masitepe angapo isanakonzedwe kugwiritsidwa ntchito mu zipangizo zamagetsi. Njira imodzi yofunika kwambiri ndi silicon epitaxy, momwe wafer imanyamulidwira pa graphite susceptors. Kapangidwe ndi ubwino wa susceptors zimakhudza kwambiri ubwino wa epitaxial layer ya wafer.

Pa magawo opyapyala oika filimu monga epitaxy kapena MOCVD, VET imapereka zida za graphite zoyera kwambiri zomwe zimagwiritsidwa ntchito pothandizira magawo kapena "ma wafers". Pakati pa ndondomekoyi, zida izi, ma epitaxy susceptors kapena nsanja za satellite za MOCVD, zimayamba kuyikidwa pamalo oika filimu:

● Kutentha kwambiri.
● Chotsukira mpweya chochuluka.
● Kugwiritsa ntchito zinthu zoyambitsa mpweya wamphamvu.
● Palibe kuipitsidwa, palibe kuchotsedwa.
● Kukana asidi amphamvu panthawi yoyeretsa

VET Energy ndiye kampani yeniyeni yopanga zinthu zopangidwa ndi graphite ndi silicon carbide zokhala ndi zokutira za semiconductor ndi photovoltaic industry. Gulu lathu laukadaulo limachokera ku mabungwe apamwamba ofufuza m'dziko muno, ndipo lingakupatseni mayankho aukadaulo kwambiri.

Timapanga njira zamakono nthawi zonse kuti tipereke zipangizo zamakono kwambiri, ndipo tapanga ukadaulo wapadera wokhala ndi patent, womwe ungapangitse kuti mgwirizano pakati pa chophimba ndi substrate ukhale wolimba komanso wosasinthasintha.

Zinthu zomwe zili mu malonda athu:

1. Kukana kutentha kwambiri kwa okosijeni mpaka 1700℃.
2. Kuyera kwambiri komanso kufanana kwa kutentha
3. Kukana dzimbiri bwino: asidi, alkali, mchere ndi zinthu zachilengedwe.
4. Kulimba kwambiri, pamwamba pang'ono, tinthu tating'onoting'ono.
5. Moyo wautali komanso wokhalitsa

Matenda a mtima (CVD) SiC Makhalidwe oyambira a CVD SiCchophimba
Katundu	Mtengo Wamba
Kapangidwe ka Crystal	FCC β phase polycrystalline, makamaka (111) monitoring
Kuchulukana	3.21 g/cm³
Kuuma	Kulimba kwa Vickers 2500 (500g katundu)
SiZe ya Tirigu	2 ~ 10μm
Kuyera kwa Mankhwala	99.99995%
Kutha Kutentha	640 J·kg^-1·K^-1
Kutentha kwa Sublimation	2700℃
Mphamvu Yosinthasintha	415 MPa RT 4-point
Young's Modulus	430 Gpa 4pt kupindika, 1300℃
Kutentha kwa Matenthedwe	300W·m^-1·K^-1
Kukula kwa Kutentha (CTE)	4.5×10^-6K^-1