China Wopanga SiC yokutidwa Graphite MOCVD Epitaxy Susceptor

China Wopanga SiC wokutidwa Graphite MOCVD Epitaxy Susceptor Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

Kuyera <5ppm
‣ Kufanana kwabwino kwa doping
‣ Kuchulukana kwakukulu komanso kumamatira
‣ Good anti-corrosive and carbon resistance

‣ Kusintha mwaukadaulo
‣ Nthawi yotsogolera
‣ Kupereka kokhazikika
‣ Kuwongolera kwabwino komanso kuwongolera kosalekeza

Epitaxy ya GaN pa Sapphire(RGB / Mini / Micro LED);
Epitaxy ya GaN pa Si Substrate(UVC);
Epitaxy ya GaN pa Si Substrate(Chida Chamagetsi);
Epitaxy ya Si pa Si Substrate(Integrated dera);
Epitaxy ya SiC pa SiC Substrate(Substrate);
Epitaxy ya InP pa InP

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Zogulitsa Tags

Mtengo wapamwamba wa MOCVD Susceptor wogula pa intaneti ku China

Chophika chimafunika kudutsa masitepe angapo chisanakonzekere kugwiritsidwa ntchito pazida zamagetsi. Njira imodzi yofunikira ndi silicon epitaxy, momwe zopatsirana zimanyamulidwa pa graphite susceptors. Katundu ndi mtundu wa susceptors zimakhudza kwambiri mtundu wa epitaxial wosanjikiza wa wafer.

Pazigawo zowonda zamakanema monga epitaxy kapena MOCVD, VET imapereka zida zapamwamba kwambiri za graphite zomwe zimagwiritsidwa ntchito pothandizira magawo kapena "zowotcha". Pachimake cha ndondomekoyi, zipangizozi, ma epitaxy susceptors kapena nsanja za satellite za MOCVD, zimayikidwa koyamba ndi malo osungira:

● Kutentha kwambiri.
● Vuto lalikulu.
● Kugwiritsa ntchito zida zamphamvu za gaseous precursors.
● Kusaipitsidwa, kusasenda.
● Kusamva ma asidi amphamvu poyeretsa

VET Energy ndi omwe amapanga makonda opanga ma graphite ndi silicon carbide okhala ndi zokutira za semiconductor ndi mafakitale a photovoltaic. Gulu lathu laukadaulo limachokera ku mabungwe apamwamba ofufuza zapakhomo, litha kukupatsirani mayankho aukadaulo.

Timapitirizabe kupanga njira zapamwamba zoperekera zipangizo zamakono, ndipo tapanga teknoloji yokhayo yovomerezeka, yomwe ingapangitse mgwirizano pakati pa zokutira ndi gawo lapansi kukhala lolimba komanso losavuta kusokoneza.

Zogulitsa zathu:

1. High kutentha makutidwe ndi okosijeni kukana mpaka 1700 ℃.
2. Kuyera kwakukulu ndi kufanana kwa kutentha
3. Kukana kwabwino kwa dzimbiri: asidi, alkali, mchere ndi organic reagents.
4. High kuuma, yaying'ono pamwamba, particles zabwino.
5. Moyo wautali wautumiki komanso wokhazikika

CVD SiC Zida zoyambira za CVD SiCzokutira
Katundu	Mtengo Wodziwika
Kapangidwe ka Crystal	FCC β gawo polycrystalline, makamaka (111) orientation
Kuchulukana	3.21g/cm³
Kuuma	2500 Vickers kuuma (500g katundu)
Grain SiZe	2 ~ 10μm
Chemical Purity	99.99995%
Kutentha Mphamvu	640 jkg^-1·K^-1
Kutentha kwa Sublimation	2700 ℃
Flexural Mphamvu	415 MPa RT 4-mfundo
Young's Modulus	430 Gpa 4pt bend, 1300 ℃
Thermal Conductivity	300Wm^-1·K^-1
Kukula kwa Thermal (CTE)	4.5 × 10^-6K^-1