Moetsi oa Chaena ea nang le SiC Coated Graphite MOCVD Epitaxy Susceptor

Moetsi oa Chaena ea nang le Graphite e koahetsoeng ea SiC MOCVD Epitaxy Susceptor Setšoantšo se Hlahisitsoeng

Tlhaloso e Khutšoanyane:

Bohloeki < 5ppm
‣ Ho tšoana hantle ha lithethefatsi
‣ Ho ba le boima bo phahameng le ho khomarela
‣ E na le khanyetso e ntle ea ho thibela ho bola le khabone

‣ Ho iketsetsa maemo ka botsebi
‣ Nako e khutšoanyane ea ho etella pele
‣ Phepelo e tsitsitseng
‣ Taolo ea boleng le ntlafatso e tsoelang pele

Epitaxy ea GaN holim'a Sapphire(RGB/Nyenyane/Di-LED tse nyane);
Epitaxy ea GaN holim'a Si Substrate(UVC);
Epitaxy ea GaN holim'a Si Substrate(Sesebelisoa sa Elektroniki);
Epitaxy ea Si holim'a Si Substrate(Potoloho e kopaneng);
Epitaxy ea SiC holim'a SiC Substrate(Sebaka se ka tlase);
Epitaxy ea InP ho InP

Romella imeile ho rona Khoasolla e le PDF

Qaqiso ea Sehlahisoa

Li-tag tsa Sehlahisoa

MOCVD Susceptor ea boleng bo holimo e reka inthaneteng Chaena

Wafer e hloka ho feta mehatong e 'maloa pele e loketse ho sebelisoa lisebelisoa tsa elektroniki. Ts'ebetso e 'ngoe ea bohlokoa ke silicon epitaxy, moo li-wafer li jaroang holim'a li-susceptor tsa graphite. Thepa le boleng ba li-susceptor li na le phello ea bohlokoa boleng ba lera la epitaxial la wafer.

Bakeng sa mekhahlelo e menyenyane ea ho beoa ha filimi joalo ka epitaxy kapa MOCVD, VET e fana ka lisebelisoa tsa graphite tse hloekileng haholo tse sebelisetsoang ho tšehetsa li-substrate kapa "li-wafers". Motheong oa ts'ebetso, lisebelisoa tsena, li-susceptor tsa epitaxy kapa li-platform tsa satellite bakeng sa MOCVD, li qala ho beoa tikolohong ea ho beoa ha eona:

● Mocheso o phahameng.
● Sesebelisoa se phahameng sa ho hloekisa moea.
● Tšebeliso ea lintho tse ka pele tse matla tsa khase.
● Ha ho na tšilafalo, ha ho na ho petsoha.
● Ho hanyetsa li-asidi tse matla nakong ea ts'ebetso ea ho hloekisa

VET Energy ke moetsi oa 'nete oa lihlahisoa tsa graphite le silicon carbide tse ikhethileng tse nang le pente bakeng sa indasteri ea semiconductor le photovoltaic. Sehlopha sa rona sa botekgeniki se tsoa litsing tse holimo tsa lipatlisiso tsa lehae, se ka u fa litharollo tse ling tsa thepa ea profeshenale.

Re ntse re ntshetsa pele mekgwa e tswetseng pele ho fana ka thepa e tswetseng pele haholoanyane, mme re se re sebelitse theknoloji e ikgethang e nang le patente, e ka etsang hore kamano pakeng tsa ho roala le substrate e tiee mme e se ke ya kgaohana haholo.

Likarolo tsa lihlahisoa tsa rona:

1. Khanyetso ea oxidation ea mocheso o phahameng ho fihlela ho 1700℃.
2. Bohloeki bo phahameng le ho tšoana ha mocheso
3. Ho hanyetsa mafome hantle haholo: asiti, alkali, letsoai le li-reagent tsa tlhaho.
4. Ho thatafala ho hoholo, bokaholimo bo kopaneng, dikarolwana tse nyane.
5. Bophelo ba tšebeletso e telele le bo tšoarellang haholoanyane

CVD SiC Thepa ea motheo ea 'mele ea CVD SiCsekoahelo
Thepa	Boleng bo Tloaelehileng
Sebopeho sa kristale	FCC β phase polycrystalline strategy, haholo-holo (111) strategy
Botenya	3.21 g/cm³
Bothata	Boima ba Vickers ba 2500 (mojaro oa 500g)
Sekala sa Koro	2 ~ 10μm
Bohloeki ba Lik'hemik'hale	99.99995%
Bokhoni ba Mocheso	640 J·kg^-1·K^-1
Mocheso oa Sublimation	2700℃
Matla a ho Tenyetseha	415 MPa RT lintlha tse 4
Modulus ea Young	430 Gpa kobeho ea 4pt, 1300℃
Ho khanna ha mocheso	300W·m^-1·K^-1
Katoloso ea Thermal (CTE)	4.5×10^-6K^-1