1. Waʻa Crystal Graphite me ka uhi ʻana o CVD-SiC
He maʻalahi ke hana ʻana i ka graphite a hiki ke hana ʻia i loko o kahi waʻa kristal hoʻokahi ʻāpana ma o nā kaʻina hana he nui mai kahi mea poloka hoʻokahi. ʻOiai he mea porous ka graphite, pono e uhi ʻia kahi papa SiC me ka mānoanoa o kahi 100μm ma luna o kona ʻili e pale aku i ka pilikia hapa i hoʻokumu ʻia e ka hōʻike pololei ʻana o ka ʻili graphite i nā hana semiconductor like ʻole. Eia nō naʻe, ʻo ka mānoanoa o kaKa uhi ʻana o CVD-SiCʻAʻole maʻalahi ke kāohi, ʻoiai ma kekahi mau lua hohonu a me nā kihi kahi e lahilahi ai ka uhi. Ma muli o ke kūlike ʻole o CTE (coefficient of thermal expansion) ma waena o ke kino graphite a me ke kiʻiʻoniʻoni SiC (25-1400 ℃, me ka awelika o 4.4 × 10e-6 / ℃ no SIC a me 7.1 × 10e-6 / ℃ no graphite), ʻo ka kiʻiʻoniʻoni SiC e hāʻule pinepine ma hope o kekahi mau piʻi a me ka hāʻule ʻana o ka mahana. Ke hōʻike ʻia ka graphite, e komo nā kinoea corrosive a i ʻole nā wai i loko o ke kino graphite porous a paʻakikī ke wehe loa, a laila e alakaʻi ana i ka hana ʻana o nā partical i nā kaʻina hana wela kiʻekiʻe. ʻO kēia waʻa graphite i uhi ʻia me SiC ka mea makepono loa a ʻo ia ka pōkole loa o ke ola, ma kahi o hoʻokahi makahiki.
2. ʻO ka waʻa kristal SiC i hoʻopili hou ʻia me ka uhi ʻana o CVD-SiC
Hoʻokumu pinepine ʻia nā waʻa kristal SiC i hoʻopili hou ʻia ma ka sintering a me ka hana ʻana i kekahi mau ʻāpana ʻāpana mua, a laila e hoʻopili i kēlā me kēia ʻāpana me ka Si paste ma nā mahana kiʻekiʻe e hana i kahi waʻa kristal, a ma ka hope e hoʻopili ana i kahi uhi CVD-SiC (ma kahi o 100um). No ka mea he porous ka recrystallization, hiki ke hoʻokomo ʻia nā ʻāpana i loko o nā kaʻina hana semiconductor me ka ʻole o ka uhi SiC. Eia kekahi, ʻaʻole hiki i ka Si paste ma ka ʻāpana hoʻopili ke kū i ka mahana kiʻekiʻe like me ka mea SiC. ʻO ke kaʻina hana hana o kēia waʻa kristal SiC i hoʻopili hou ʻia me ka uhi CVD-SiC ka lōʻihi loa a he kiʻekiʻe loa ke kumukūʻai. Ke hoʻohālikelike ʻia me ka waʻa kristal graphite i uhi ʻia me SiC, ʻaʻohe pilikia CTE mismatch o ka waʻa kristal SiC i hoʻopili hou ʻia i uhi ʻia me CVD-SiC, akā hiki i ka holoi ʻakika a me ke kuʻi ʻana ke kumu o ka hāʻule ʻana o ka uhi SiC. ʻOi aku ka lōʻihi o kona ola lawelawe, ma kahi o 2 a 3 mau makahiki.
3.Hoʻokahi ʻāpana SiC Crystal Boat me ka ʻole o ka uhi CVD
No nā waʻa kristal me ka ʻole o ka uhi CVD, pono ka ʻili e mānoanoa. Aia ʻelua ʻano o nā mea SiC mānoanoa: ʻo Pressureless sintered SiC (SSiC) a me Reaction-sintered SiC (RBSiC, i ʻike ʻia hoʻi ʻo silicon-permeated SiC, SiSiC). Eia naʻe, ʻaʻole hiki ke hoʻohui ʻia kekahi o kēia mau ʻano SiC ʻelua i loko o hoʻokahi ʻāpana e like me ka quartz. ʻAʻole maʻalahi ke hana i ka SiC mai ka pauka a puhi iā ia i loko o kahi ʻano kokoke o kahi waʻa kristal hoʻokahi ʻāpana. Eia kekahi, he paʻakikī loa ka SiC a he paʻakikī hoʻi ke hana, kahi e alakaʻi ai i ke kumukūʻai hana kiʻekiʻe loa no nā waʻa kristal SiC hoʻokahi ʻāpana. ʻOiai ʻoi aku ka maʻalahi o ka RBSiC e hana i kahi ʻano kokoke ma mua o SSiC, he paʻakikī loa nō naʻe. Eia kekahi, aia i loko o ka RBSC he 10 a 15% Si manuahi, kahi e hiki ʻole ai ke kū i nā mahana kiʻekiʻe like me nā mea SSiC. Ma keʻano laulā, hiki iā ia ke kū i nā mahana ma lalo o 1400 ° C. Eia kekahi, hiki ke ʻoki maʻalahi ʻia ka Si manuahi e ka waikawa HF, e alakaʻi ana i ka partical.
4.Kallex SiC Modular Crystal Boat
Hoʻoponopono ʻia nā ʻāpana ʻāpana ma o ke kūkulu ʻana, ka sintering a me ka wili ʻana me ka hoʻohana ʻana i ka mea SiC sintered pressureless me ka maʻemaʻe o 99.675%. A laila e hoʻohui iā lākou me nā wili SSiC, nā nati, a me nā mea ʻē aʻe, a hoʻopaʻa iā lākou me nā pine SSiC e hōʻoia i ka hiki ke hāpai i ka ukana. Me ka ʻole o ka uhi SiC, ʻaʻohe pilikia o ka hōʻino ʻia ʻana o ka uhi ʻāpana. Eia kekahi, hiki ke hoʻohana ʻia no ka manawa lōʻihi i nā wahi ʻino, e like me ke kiʻekiʻe o ka mahana (1600℃) a me ka waikawa HF, me ke ola lawelawe ʻoi aku ma mua o ʻelima mau makahiki.
Ka manawa hoʻouna: ʻAukake-19-2025