Iinkqubo ezi-4 zokuvelisa iSilicon Carbide (SiC) Wafer Boat

1. Isikhephe seGraphite Crystal esine-CVD-SiC Coating

I-Graphite kulula ukuyicubungula kwaye ingenziwa ibe yinqanawa yekristale yeqhekeza elinye ngokusebenzisa iinkqubo ezininzi ezivela kwibhloko enye. Njengoko i-graphite iyinto eneembobo, umaleko we-SiC onobukhulu obumalunga ne-100μm kufuneka ugqunywe phezu komphezulu wawo ukuthintela ingxaki encinci ebangelwa kukuvezwa ngokuthe ngqo komphezulu we-graphite kwimveliso eyahlukeneyo ye-semiconductor. Nangona kunjalo, ubukhulu be-Ukwaleka kwe-CVD-SiCAkukho lula ukuyilawula, ingakumbi kwezinye iimbobo ezinzulu kunye neekona apho uqweqwe lunokuba mncinci khona. Ngenxa yokungafani kwe-CTE (i-coefficient of thermal expansion) phakathi komzimba wegrafiti kunye nefilimu yeSiC (25-1400℃, ngomyinge we-4.4×10e-6/℃ kwi-SIC kunye ne-7.1×10e-6/℃ kwigrafiti), ifilimu yeSiC idla ngokuwa emva kokunyuka nokwehla kwamaqondo obushushu amaninzi. Xa igrafiti iveziwe, iigesi ezirhabaxa okanye ulwelo ziya kungena emzimbeni wegrafiti enemingxuma kwaye kube nzima ukuzisusa ngokupheleleyo, ngaloo ndlela zikhokelela ekudalweni kwezinto ezincinci kwiinkqubo zobushushu obuphezulu. Esi sikhephe segrafiti esine-SiC sesona sitshiphu kwaye sinobomi obufutshane, malunga nonyaka omnye.

2.Isikebhe sekristale seSiC esenziwe ngokutsha esine-CVD-SiC Coating

Iinqanawa zekristale zeSiC eziphinde zasetyenziswa zihlala zenziwa ngokusila nokucubungula iiyunithi ezininzi kuqala, emva koko zibopha inxalenye nganye ngeSi paste kumaqondo obushushu aphezulu ukuze kwenziwe isikebhe sekristale, kwaye ekugqibeleni kusetyenziswa i-CVD-SiC coating (malunga ne-100um). Ngenxa yokuba i-recrystallization inemingxuma, i-partical inokungeniswa kwiinkqubo ze-semiconductor ngaphandle kwe-SiC coating. Ukongeza, i-Si paste kwindawo ye-bonding ayinakumelana nobushushu obufanayo nobo bezinto zeSiC. Inkqubo yokuvelisa le nqanawa yekristale yeSiC ephinde yasetyenziswa ene-CVD-SiC coating yeyona inde kakhulu kwaye ixabiso liphezulu kakhulu. Xa ithelekiswa nesikebhe sekristale se-graphite esigqunywe nge-SiC, isikebhe sekristale seSiC esiphinde sasetyenziswa esine-CVD-SiC asinangxaki yokungafani kwe-CTE, kodwa ukuhlamba kunye nokungqubana kwe-asidi nako kunokubangela ukuba i-SiC coating iwe. Ubomi bayo benkonzo bude kancinci, malunga neminyaka emi-2 ukuya kwemi-3.

3. Isikhephe sekristale seSiC esineqhekeza elinye esingenaso isigqubuthelo se-CVD

Kwiinqanawa zekristale ezingenayo i-CVD coating, umphezulu kufuneka ube mkhulu. Kukho iintlobo ezimbini zezinto zeSiC ezixineneyo: iSiC engenaxinzelelo (SSiC) kunye neSiC e-reaction-sintered (RBSiC, eyaziwa ngokuba yiSiC e-silicon-permeated, SiSiC). Nangona kunjalo, akukho nanye kwezi ntlobo zimbini zeSiC enokuhlanganiswa kwiyunithi enye efana ne-quartz. Akulula ukwenza iSiC ngomgubo kwaye uyitshise ibe yimo eqikelelweyo yenqanawa yekristale enye eneqhekeza elinye. Ngaphezu koko, iSiC inzima kakhulu kwaye kunzima ukuyicubungula, nto leyo ekhokelela kwixabiso eliphezulu kakhulu lokucubungula kwiinqanawa zekristale zeSiC ezineqhekeza elinye. Nangona i-RBSiC ilula kancinci ukwenza imo eqikelelweyo kuneSSiC, isanzima kakhulu. Ukongeza, i-RBSC ine-10 ukuya kwi-15% ye-Si yamahhala, nto leyo eyenza ingakwazi ukumelana namaqondo obushushu aphezulu afanayo nezinto zeSSiC. Ngokubanzi, inokumelana namaqondo obushushu angaphantsi kwe-1400 ° C. Ngaphezu koko, iSi yamahhala ikrolwa ngokulula yi-HF acid, nto leyo ekhokelela kwinxalenye ethile.

4. Inqanawa yekristale yeKallex SiC Modular

Iindawo zeyunithi zicutshungulwa ngokubumba, ukuhlikihla kunye nokusila kusetyenziswa izinto zeSiC ezisikiweyo ezingenaxinzelelo kunye nobumsulwa be-99.675%. Emva koko zidibanise kunye nezikrufu ze-SSiC, amantongomane, njl.njl., kwaye uzilungise ngeephini ze-SSiC ukuqinisekisa amandla okuthwala umthwalo. Ngaphandle kokugquma kwe-SiC, akukho mngcipheko wokonakala kwengqokelela yokugquma. Ngaphezu koko, ingasetyenziswa ixesha elide kwiindawo ezinzima, ezifana namaqondo obushushu aphezulu (1600℃) kunye ne-HF acid, enobomi benkonzo obungaphezu kweminyaka emihlanu.