1. Isikebhe se-Graphite Crystal esine-CVD-SiC Coating
I-Graphite kulula ukuyicubungula futhi ingenziwa ibe yisikebhe sekristalu esisodwa ngezinqubo eziningi kusuka ku-block material eyodwa. Njengoba i-graphite iyinto enezimbobo, ungqimba lwe-SiC olunobukhulu obungaba ngu-100μm kumele lumbozwe ebusweni balo ukuze kuvinjelwe inkinga encane ebangelwa ukuvezwa ngqo kobuso be-graphite ekukhiqizweni okuhlukahlukene kwe-semiconductor. Kodwa-ke, ubukhulu be-Ukugqoka kwe-CVD-SiCAkulula ukulawula, ikakhulukazi kwezinye izimbobo ezijulile nasemakhoneni lapho uqweqwe lungase lube luncane khona. Ngenxa yokungafani kwe-CTE (i-coefficient of thermal expansion) phakathi komzimba we-graphite nefilimu ye-SiC (25-1400℃, ngesilinganiso esingu-4.4×10e-6/℃ se-SIC kanye no-7.1×10e-6/℃ se-graphite), ifilimu ye-SiC ivame ukuwa ngemva kokwenyuka nokwehla kwezinga lokushisa okuningana. Lapho i-graphite ivezwa, amagesi agqwalisayo noma uketshezi kuzongena emzimbeni we-graphite onezimbobo futhi kube nzima ukuwususa ngokuphelele, ngaleyo ndlela kuholele ekwakhiweni kwezingxenye ezinqubweni zokushisa okuphezulu. Lesi sikebhe se-graphite esimbozwe yi-SiC sishibhile futhi sinokuphila okufushane kakhulu, cishe unyaka owodwa.
2. Isikebhe se-SiC Crystal esiphinde saqiniswa nge-CVD-SiC Coating
Izikebhe zekristalu ze-SiC eziphinde zakhiwe kabusha zivame ukwakhiwa ngokucwilisa nokucubungula izingxenye eziningana zamayunithi kuqala, bese kuhlanganiswa ingxenye ngayinye nge-Si paste emazingeni okushisa aphezulu ukuze kwakhiwe isikebhe sekristalu, bese ekugcineni kusetshenziswa i-CVD-SiC coating (cishe i-100um). Ngenxa yokuthi i-recrystallization inezimbobo, izingxenye ezincane zingafakwa nasezinqubweni ze-semiconductor ngaphandle kwe-SiC coating. Ngaphezu kwalokho, i-Si paste endaweni ye-bonding ayikwazi ukumelana nokushisa okuphezulu okufanayo nezinto ze-SiC. Inqubo yokukhiqiza yalesi sikebhe sekristalu se-SiC esiphinde sakhiwe kabusha esine-CVD-SiC coating iyona ende kakhulu futhi izindleko ziphezulu kakhulu. Uma kuqhathaniswa nesikebhe sekristalu se-graphite esihlanganiswe ne-SiC, isikebhe sekristalu se-SiC esiphinde sakhiwe kabusha esihlanganiswe ne-CVD-SiC asinayo inkinga yokungafani kwe-CTE, kodwa ukugeza nge-asidi kanye nokushayisana nakho kungabangela ukuthi i-SiC coating iwe. Impilo yaso yokusebenza inde kancane, cishe iminyaka emi-2 kuya kwemi-3.
3. Isikebhe Esine-SiC Crystal Esingenaso Isimbozo Se-CVD
Kuma-crystal boat angenawo ungqimba lwe-CVD, ubuso kumele bube bukhulu. Kunezinhlobo ezimbili zezinto ze-SiC eziqinile: i-SiC engenangcindezi (SSiC) kanye ne-SiC e-reaction-sintered (RBSiC, eyaziwa nangokuthi i-silicon-permeated SiC, i-SiSiC). Kodwa-ke, azikho kulezi zinhlobo ezimbili ze-SiC ezingahlanganiswa zibe yiyunithi eyodwa njenge-quartz. Akulula ukwakha i-SiC kusuka ku-powder bese uyishisa ibe yisimo esilinganiselwe se-single-piece crystal boat. Ngaphezu kwalokho, i-SiC inzima kakhulu futhi kunzima ukuyicubungula, okuholela ezindleleni eziphezulu kakhulu zokucubungula izikebhe ze-SiC crystal boat eyodwa. Nakuba i-RBSiC kulula kancane ukwakha isimo esilinganiselwe kune-SSiC, isanzima kakhulu. Ngaphezu kwalokho, i-RBSC iqukethe i-Si yamahhala engu-10 kuya ku-15%, okwenza ingakwazi ukumelana namazinga okushisa aphezulu afanayo nezinto ze-SSiC. Ngokuvamile, ingamelana namazinga okushisa angaphansi kuka-1400 ° C. Ngaphezu kwalokho, i-Si yamahhala iqoshwa kalula yi-HF acid, okuholela ekuqhekekeni.
4. Isikebhe se-Kallex SiC Modular Crystal
Izingxenye zeyunithi zicutshungulwa ngokwakhiwa, ukuthungwa kanye nokugaya kusetshenziswa izinto ze-SiC ezithungwe ngaphandle kokucindezela okuhlanzekile okungu-99.675%. Bese uzihlanganisa kanye nezikulufo ze-SSiC, amantongomane, njll., bese uzilungisa ngamaphini e-SSiC ukuqinisekisa amandla okuthwala umthwalo. Ngaphandle kokuthungwa kwe-SiC, akukho bungozi bokulimala kokuthungwa okuyingxenye. Ngaphezu kwalokho, ingasetshenziswa isikhathi eside ezindaweni ezinzima, njengamazinga okushisa aphezulu (1600℃) kanye ne-HF acid, impilo yenkonzo engaphezu kweminyaka emihlanu.
Isikhathi sokuthunyelwe: Agasti-19-2025