Uburyo 4 bwo gukora ubwato bwa Silicon Carbide (SiC) Wafer

1. Ubwato bwa Graphite Crystal bufite CVD-SiC Coating

Graphite yoroshye kuyitunganya kandi ishobora gukorwamo ubwato bwa kristu bugizwe n'igice kimwe binyuze mu buryo bwinshi buva ku gikoresho kimwe. Kubera ko graphite ari ibikoresho bifite imyenge, urwego rwa SiC rufite ubugari bwa 100μm rugomba gusigwa ku buso bwarwo kugira ngo hirindwe ikibazo cy'igice giterwa no kugera ku buso bwa graphite mu nganda zitandukanye za semiconductor. Ariko, ubunini bwaIgipfukisho cya CVD-SiCNtabwo byoroshye kugenzura, cyane cyane mu myobo minini n'imfuruka aho igitambaro gishobora kuba gito. Bitewe n'uko CTE (coefficient of thermal expansion) idahuye hagati y'umubiri wa grafiti na SiC film (25-1400℃, hamwe n'impuzandengo ya 4.4×10e-6/℃ kuri SIC na 7.1×10e-6/℃ kuri grafiti), SiC film ikunze kugwa nyuma y'ubushyuhe bwinshi buzamuka kandi bukagabanuka. Iyo grafiti igaragaye, imyuka yangiza cyangwa ibinyabutabire byinjira mu mubiri wa grafiti ifite imyenge kandi bikagorana kuyikuraho burundu, bityo bigatuma habaho igice cy'ibice mu bushyuhe bwinshi. Ubu bwato bwa grafiti butwikiriwe na SiC ni bwo buhendutse kandi bufite igihe gito cyo kumara, hafi umwaka umwe.

2. Ubwato bwa SiC Crystal bwasubiwemo ifuru hamwe n'igitambaro cya CVD-SiC

Ubwato bwa kristu bwa SiC busubijwemo ubusanzwe bukorwa binyuze mu gusya no gutunganya ibice byinshi, hanyuma bugahuza buri gice na Si paste ku bushyuhe bwinshi kugira ngo hakorwe ubwato bwa kristu, hanyuma bugashyirwamo irangi rya CVD-SiC (hafi 100um). Kubera ko recrystallization ifite imyenge, igice gishobora no gushyirwa mu bikorwa bya semiconductor nta irangi rya SiC. Byongeye kandi, Si paste mu gace k’irangi ntishobora kwihanganira ubushyuhe bwinshi nk’ubw’ibikoresho bya SiC. Uburyo bwo gukora ubu bwato bwa kristu bwa SiC busubijwemo irangi rya CVD-SiC ni bwo burebure kandi igiciro ni kinini cyane. Ugereranyije n’ubwato bwa kristu bwa grafiti busubijwemo irangi rya SiC, ubwato bwa kristu bwa SiC busubijwemo irangi rya CVD-SiC nta kibazo na kimwe cya CTE kijyanye, ariko gukaraba aside no kugongana nabyo bishobora gutuma SiC paste igwa. Igihe cyabwo ni kirekire gato, hagati y’imyaka 2 na 3.

3. Ubwato bwa SiC Crystal bugizwe n'igice kimwe budafite CVD coating

Ku bwato bwa kristu budafite CVD coating, ubuso bugomba kuba bunini. Hari ubwoko bubiri bw'ibikoresho bya SiC byuzuye: SiC idafite umuvuduko (SSiC) na SiC idafite reaction-sintered (RBSiC, izwi kandi nka silicon-permeated SiC, SiSiC). Ariko, nta na bumwe muri ubu bwoko bubiri bwa SiC bushobora guhuzwa mu gice kimwe nka quartz. Ntibyoroshye gukora SiC mu ifu no kuyitwika ikaba ishusho ihwanye n'ubwato bwa kristu bw'igice kimwe. Byongeye kandi, SiC iragoye cyane kuyitunganya, bigatuma ihenda cyane gutunganya ubwato bwa kristu bw'igice kimwe bwa SiC. Nubwo RBSiC yoroshye gato gukora ishusho ihwanye kurusha SSiC, iracyari ikomeye cyane. Byongeye kandi, RBSC irimo Si 10 kugeza kuri 15% idafite, bigatuma idashobora kwihanganira ubushyuhe bwinshi nk'ubw'ibikoresho bya SSiC. Muri rusange, ishobora kwihanganira ubushyuhe buri munsi ya 1400 ° C. Byongeye kandi, Si y'ubuntu yoroshye gushushanya aside HF, bigatuma ihinduka igice.

4. Ubwato bwa Kallex SiC Modular Crystal

Ibice by'iyi mashini bitunganywa binyuze mu gukora, gusya no gusya hakoreshejwe ibikoresho bya SiC bidashyuha kandi bifite ubuziranenge bwa 99.675%. Hanyuma ubivange hamwe na vis za SSiC, imbuto, nibindi, hanyuma ubishyireho udupira twa SSiC kugira ngo urebe ko ubushobozi bwo gutwara imizigo bushobora kwiyongera. Nta gusiga SiC, nta ngaruka zo kwangirika kw'udupira. Byongeye kandi, ishobora gukoreshwa igihe kirekire ahantu habi, nko mu bushyuhe bwinshi (1600℃) na aside HF, kandi ubuzima bwayo bushobora kuba imyaka irenga itanu.