I ke kenekulia 21, me ka hoʻomohala ʻana o ka ʻepekema a me ka ʻenehana, ua lilo ka ʻike, ka ikehu, nā mea, nā ʻenehana biological i nā pou ʻehā o ka hoʻomohala ʻana i ka huahana o kēia lā, silicon carbide ma muli o nā waiwai paʻa kemika, kiʻekiʻe thermal conductivity, thermal expansion coefficient o ka liʻiliʻi, liʻiliʻi liʻiliʻi, ke kūpaʻa maikaʻi, ka paʻakikī kiʻekiʻe, ka ikaika mechanical kiʻekiʻe, ke kūpaʻa ʻana o ke kino a me nā ʻano mea ʻē aʻe. nā kiwi, nā mea semiconductor, gyro, mea ana, aerospace a me nā māla ʻē aʻe.
Ua hoʻomohala ʻia nā seramika Silicon carbide mai ka makahiki 1960. Ma mua, ua hoʻohana nui ʻia ka silicon carbide i nā mea wili mīkini a me nā refractory. Hoʻopili koʻikoʻi nā ʻāina a puni ka honua i ka ʻenehana o nā seramika kiʻekiʻe, a i kēia manawa ʻaʻole ʻoluʻolu wale ia i ka hoʻomākaukau ʻana i nā seramika silicon carbide kuʻuna, ʻoi aku ka wikiwiki o ka hana ʻana o nā ʻoihana ceramics kiʻekiʻe, ʻoi aku hoʻi ma nā ʻāina hoʻomohala. I nā makahiki i hala iho nei, ua ʻike ʻia nā seramika multi-phase e pili ana i nā seramika SIC, e hoʻomaikaʻi ana i ka paʻakikī a me ka ikaika o nā mea monomer. Silicon carbide nui ʻehā o ka hoʻohana ʻana, ʻo ia hoʻi, nā seramika hana, nā mea refractory kiʻekiʻe, abrasives a me nā mea metala.
ʻO nā seramika Silicon carbide maikaʻi loa ke pale ʻana i ka lole
Ua aʻo ʻia kēia huahana a hoʻoholo ʻia nā seramika Silicon carbide. ʻO ke kūpaʻa ʻana o ka silicon carbide ceramics ua like kēia huahana me 266 mau manawa o ke kila manganese, e like me 1741 mau manawa o ka hao chromium kiʻekiʻe. He maikaʻi loa ke kūpale ʻaʻahu. Hiki iā ia ke mālama i ke kālā he nui. Hiki ke hoʻohana mau ʻia nā seramika Silicon carbide no nā makahiki he ʻumi.
Loaʻa ka ikaika kiʻekiʻe, ka paʻakikī kiʻekiʻe a me ke kaumaha māmā nā silikon carbide ceramics
Ma ke ʻano he ʻano mea hou, ʻoi aku ka maʻalahi o ka hoʻohana ʻana i ka silicon carbide ceramics i kēia huahana ikaika, kiʻekiʻe paʻakikī, ʻoi aku ka maʻalahi o ke kaumaha, ʻoi aku ka maʻalahi o ia mau silicon carbide ceramics i hoʻohana ʻia, hoʻokomo a hoʻololi i nā mea i luna.
ʻO ka paia o loko o ka silicon carbide ceramic maʻemaʻe a ʻaʻole paʻa i ka pauka
Silicon carbide ceramics ua puhi ʻia kēia huahana ma hope o ke kiʻekiʻe o ka wela, no laila ʻoi aku ka paʻakikī o ke ʻano o ka silicon carbide ceramics, maʻalahi ka ʻili, ʻoi aku ka maikaʻi o ka hoʻohana ʻana, no laila e hoʻohana ʻia i ka ʻohana, e ʻoi aku ka maikaʻi o ka nani.
He haʻahaʻa ke kumu kūʻai o ka silikon carbide ceramics
ʻO ke kumu kūʻai o ka hana ʻana i nā ceramics silicon carbide ponoʻī ʻoi aku ka liʻiliʻi, no laila ʻaʻole pono mākou e kūʻai i ke kumu kūʻai o ka silicon carbide ceramics i uku nui loa, no laila no ko mākou ʻohana, akā hiki ke mālama i ke kālā he nui.
ʻO ka hoʻohana ʻana i ka silikon carbide ceramic:
pōpō ʻeleʻele silikoni carbide
Loaʻa i ka pōpō seramika Silicon carbide nā waiwai mechanical maikaʻi loa, ke kūpaʻa oxidation maikaʻi loa, ke kūpaʻa abrasion kiʻekiʻe a me ka coefficient friction haʻahaʻa. Silicon carbide ceramic poepoe kiʻekiʻe wela wela, maʻamau seramika mea ma 1200 ~ 1400 degere Celsius ikaika e hoemi nui ia, a silicon carbide ma 1400 degere Celsius kulou ikaika e mau ana ma kahi kiʻekiʻe o 500 ~ 600MPa, no laila, hiki i kona mahana hana ke hiki i 1600 ~ 1700 degere Celsius.
ʻO nā mea i hui pū ʻia ʻo Silicon carbide
Ua hoʻohana nui ʻia ʻo Silicon carbide matrix composites (SiC-CMC) i ke kahua o ka aerospace no ko lākou kiʻekiʻe wela wela ma muli o ko lākou paʻakikī kiʻekiʻe, ikaika kiʻekiʻe a me ke kūpaʻa oxidation maikaʻi loa. ʻO ke kaʻina hana hoʻomākaukau o SiC-CMC e pili ana i ka fiber preforming, ka mālama wela kiʻekiʻe, ka uhi mesophase, ka matrix densification a me ka mālama ʻana. Loaʻa ka ikaika kiʻekiʻe o ka carbon fiber i ka ikaika a me ka paʻakikī maikaʻi, a ʻo ke kino prefabricated i hana ʻia me ia he mau mea mechanical maikaʻi.
ʻO ka uhi ʻana o Mesophase (ʻo ia hoʻi, ʻenehana interface) ʻo ia ka ʻenehana nui i ka hoʻomākaukau ʻana, ʻo ka hoʻomākaukau ʻana i nā ʻano mesophase coating me ka chemical vapor osmosis (CVI), chemical vapor deposition (CVD), sol-sol method (Sol-gcl), polymer impregnation cracking method (PLP), ʻo ka mea kūpono loa no ka hoʻomākaukau ʻana i ka silicon carbide matrix method CVI.
Loaʻa nā mea hoʻopili interfacial i ka carbon pyrolytic, boron nitride a me ka boron carbide, i waena o ka boron carbide e like me ke ʻano o ka oxidation resistance interfacial coating i uku nui ʻia. ʻO SiC-CMC, ka mea maʻamau i hoʻohana ʻia i nā kūlana oxidation no ka manawa lōʻihi, pono nō hoʻi e hana i ka mālama ʻana i ka pale ʻana i ka oxidation, ʻo ia hoʻi, kahi papa o ka silicon carbide mānoanoa me ka mānoanoa o kahi 100μm e waiho ʻia ma ka ʻili o ka huahana e ka hana CVD e hoʻomaikaʻi i kona kūpaʻa ʻana i ke kiʻekiʻe.
Ka manawa hoʻouna: Feb-14-2023