Silicon carbide (SiC) wani sabon abu ne na semiconductor. Silicon carbide yana da babban tazara (kimanin sau 3 na silicon), babban ƙarfin filin (kimanin sau 10 na silicon), babban ƙarfin zafi (kimanin sau 3 na silicon). Yana da muhimmin abu na semiconductor na gaba. Ana amfani da murfin SiC sosai a masana'antar semiconductor da hasken rana. Musamman ma, abubuwan da ke hana hasken LED da Si guda ɗaya na crystal epitaxy suna buƙatar amfani da murfin SiC. Saboda ƙarfin haɓakar LEDs a masana'antar haske da nuni, da kuma ci gaban masana'antar semiconductor mai ƙarfi,Samfurin shafi na SiCmasu sauraro suna da kyau sosai.
FILIN AIKIN
Tsarkakakke, Tsarin SEM, nazarin kauri naShafi na SiC
Tsarkakken rufin SiC akan graphite ta amfani da CVD yana da girman 99.9995%. Tsarinsa shine fcc. Fina-finan SiC da aka lulluɓe akan graphite suna da daidaito (111) kamar yadda aka nuna a cikin bayanan XRD (Hoto na 1) wanda ke nuna ingancinsa mai girma. Kauri na fim ɗin SiC iri ɗaya ne kamar yadda aka nuna a Hoto na 2.
Hoto na 2: daidaiton kauri na fina-finan SiC SEM da XRD na fim ɗin beta‐SiC akan graphite
Bayanan SEM na fim ɗin bakin ciki na CVD SiC, girman lu'ulu'u shine 2 ~ 1 OPM
Tsarin lu'ulu'u na fim ɗin CVD SiC tsari ne mai siffar cubic wanda ke tsakiya a fuska, kuma yanayin girman fim ɗin yana kusa da 100%.
An rufe silicon carbide (SiC)Tushe shine mafi kyawun tushe don silicon mai lu'ulu'u ɗaya da GaN epitaxy, wanda shine babban ɓangaren tanda na epitaxy. Tushe shine babban kayan haɗin samarwa don silicon monocrystalline don manyan da'irori masu haɗawa. Yana da tsarki mai yawa, juriya mai zafi, juriyar tsatsa, kyakkyawan matsewar iska da sauran kyawawan halaye na kayan.
Amfani da Samfurin da kuma hanyoyin aiwatarwa
Rufin tushe na Graphite don ci gaban epitaxial na silicon mai lu'ulu'u guda ɗaya Ya dace da injunan Aixtron, da sauransu. Kauri na shafi: 90 ~ 150um. Diamita na ramin wafer shine 55mm.
Lokacin Saƙo: Maris-14-2022