I-Silicon carbide (i-SiC) iyinto entsha ye-semiconductor ehlanganisiwe. I-Silicon carbide ine-band gap enkulu (cishe i-silicon ephindwe kathathu), amandla ensimu abucayi kakhulu (cishe i-silicon ephindwe kayishumi), ukuhanjiswa kokushisa okuphezulu (cishe i-silicon ephindwe kathathu). Iyinto ebalulekile ye-semiconductor yesizukulwane esilandelayo. Izembozo ze-SiC zisetshenziswa kabanzi embonini ye-semiconductor kanye ne-solar photovoltaics. Ikakhulukazi, ama-susceptors asetshenziswa ekukhuleni kwe-epitaxial kwama-LED kanye ne-Si single crystal epitaxy adinga ukusetshenziswa kwe-SiC coating. Ngenxa yokwenyuka okunamandla kwama-LED embonini yokukhanyisa nokubonisa, kanye nentuthuko enamandla yemboni ye-semiconductor,Umkhiqizo wokumboza we-SiCAmathemba amahle kakhulu.
INSIMU YESICELO
Ubumsulwa, Isakhiwo se-SEM, ukuhlaziywa kobukhulu beUkugqoka kwe-SiC
Ubumsulwa be-SiC coatings ku-graphite ngokusebenzisa i-CVD bufinyelela ku-99.9995%. Isakhiwo sayo siyi-fcc. Amafilimu e-SiC ambozwe ku-graphite aqondiswe ku-(111) njengoba kuboniswe kudatha ye-XRD (Isithombe 1) okubonisa ikhwalithi yayo ephezulu yekristalu. Ubukhulu befilimu ye-SiC bufana kakhulu njengoba kuboniswe ku-Fig. 2.
Isithombe 2: ukujiya okufanayo kwamafilimu e-SiC i-SEM kanye ne-XRD yefilimu ye-beta-SiC ku-graphite
Idatha ye-SEM yefilimu encane ye-CVD SiC, usayizi wekristalu ungama-2 ~ 1 Opm
Isakhiwo sekristalu sefilimu ye-CVD SiC siyisakhiwo se-cubic esigxile ebusweni, futhi ukuqondiswa kokukhula kwefilimu kusondele ku-100%
I-silicon carbide (SiC) embozwe ngendwanguisisekelo siyisisekelo esihle kakhulu se-single crystal silicon kanye ne-GaN epitaxy, okuyingxenye eyinhloko yesithando somlilo se-epitaxy. Isisekelo siyisesekeli esibalulekile sokukhiqiza se-monocrystalline silicon yamasekethe amakhulu ahlanganisiwe. Sinobumsulwa obuphezulu, ukumelana nokushisa okuphezulu, ukumelana nokugqwala, ukuqina komoya okuhle kanye nezinye izici zezinto ezinhle kakhulu.
Ukusetshenziswa komkhiqizo kanye nokusetshenziswa kwawo
Isembozo sesisekelo se-graphite sokukhulisa i-silicon epitaxial yekristalu eyodwa. Ifanele imishini ye-Aixtron, njll. Ubukhulu besembozo: 90~150um. Ububanzi be-wafer crater bungu-55mm.
Isikhathi sokuthunyelwe: Mashi-14-2022