I-Silicon carbide (i-SiC) yinto entsha ye-semiconductor edityanisiweyo. I-Silicon carbide ine-band gap enkulu (malunga ne-silicon ephindwe kathathu), amandla aphezulu entsimi abalulekileyo (malunga ne-silicon ephindwe kalishumi), ukuhanjiswa kobushushu okuphezulu (malunga ne-silicon ephindwe kathathu). Yinto ebalulekileyo ye-semiconductor yesizukulwana esilandelayo. Iingubo ze-SiC zisetyenziswa kakhulu kushishino lwe-semiconductor kunye ne-solar photovoltaics. Ngokukodwa, ii-susceptors ezisetyenziswa ekukhuleni kwe-epitaxial kwee-LED kunye ne-Si single crystal epitaxy zifuna ukusetyenziswa kwe-SiC coating. Ngenxa yokunyuka okunamandla kwee-LED kushishino lokukhanyisa nokubonisa, kunye nophuhliso olunamandla kushishino lwe-semiconductor,Imveliso yokugquma yeSiCamathuba amahle kakhulu.
INDAWO YOKUFAKA ISICELO
Ubumsulwa, ulwakhiwo lwe-SEM, uhlalutyo lobukhulu beUkwaleka kweSiC
Ubumsulwa beengubo zeSiC kwigrafiti ngokusebenzisa iCVD bufikelela kwi-99.9995%. Ulwakhiwo lwayo yi-fcc. Iifilimu zeSiC ezigqunywe kwigrafiti zijolise kwi (111) njengoko kubonisiwe kwidatha ye-XRD (Umfanekiso 1) ebonisa umgangatho wayo ophezulu wekristale. Ubukhulu befilimu yeSiC bufana kakhulu njengoko kubonisiwe kwiFig. 2.
Umzobo 2: ubukhulu obufanayo beefilimu zeSiC SEM kunye ne-XRD zefilimu ye-beta-SiC kwigrafiti
Idatha ye-SEM yefilimu encinci ye-CVD SiC, ubungakanani bekristale yi-2 ~ 1 Opm
Isakhiwo sekristale sefilimu yeCVD SiC sisakhiwo setyhubhu esijonge ubuso, kwaye indlela yokukhula kwefilimu isondele kwi-100%
I-silicon carbide (SiC) egqunywe nge-cameraisiseko sesona siseko silungileyo se-single crystal silicon kunye ne-GaN epitaxy, eyinxalenye ephambili yesithando somlilo se-epitaxy. Isiseko sisixhobo esibalulekileyo sokuvelisa i-monocrystalline silicon kwiisekethe ezinkulu ezidibeneyo. Sinobunyulu obuphezulu, ukumelana nobushushu obuphezulu, ukumelana nokugqwala, ukuqina komoya okuhle kunye nezinye iimpawu ezintle zezinto.
Ukusetyenziswa kunye nokusetyenziswa kwemveliso
Isiseko segrafiti yokukhulisa i-silicon epitaxial yekristale enye. Ifanelekile kwiimashini ze-Aixtron, njl.njl. Ubukhulu bengubo: 90~150um. Ububanzi be-wafer crater yi-55mm.
Ixesha lokuthumela: Matshi-14-2022