Nā keramika silikona carbide: nā ʻāpana kikoʻī e pono ai no nā kaʻina hana semiconductor

ʻO ka ʻenehana Photolithography ke kālele nui nei i ka hoʻohana ʻana i nā ʻōnaehana optical e hōʻike i nā ʻano kaapuni ma nā wafers silicon. Hoʻopilikia pololei ka pololei o kēia kaʻina hana i ka hana a me ka hopena o nā kaapuni i hoʻohui ʻia. Ma ke ʻano he hoʻokahi o nā lako hana kiʻekiʻe loa no ka hana ʻana i nā chip, aia i loko o ka mīkini lithography a hiki i nā haneli haneli o nā ʻāpana. Pono nā ʻāpana optical a me nā ʻāpana i loko o ka ʻōnaehana lithography i ka pololei kiʻekiʻe loa e hōʻoia i ka hana kaapuni a me ka pololei.Nā keramika SiCua hoʻohana ʻia manā ʻūpā wafera me nā aniani huinahā keramika.

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ʻŌmole WaferʻO ka wafer chuck i loko o ka mīkini lithography e hali a hoʻoneʻe i ka wafer i ka wā o ke kaʻina hana hōʻike. He mea nui ka hoʻonohonoho pololei ma waena o ka wafer a me ka chuck no ka hana hou ʻana i ke ʻano ma luna o ka wafer.Wafer SiCUa ʻike ʻia nā chucks no ko lākou māmā, kūpaʻa kiʻekiʻe a me ke koina hoʻonui wela haʻahaʻa, hiki ke hōʻemi i nā ukana inertial a hoʻomaikaʻi i ka pono o ka neʻe ʻana, ka pololei o ke kūlana a me ke kūpaʻa.

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ʻAniani huinaha keramika I loko o ka mīkini lithography, he mea koʻikoʻi ka hoʻonohonoho ʻana o ka neʻe ʻana ma waena o ka wafer chuck a me ke kahua mask, kahi e pili pono ai i ka pololei a me ka hua o ka lithography. ʻO ka reflector square kahi ʻāpana koʻikoʻi o ka ʻōnaehana ana manaʻo hoʻopuka kūlana scanning wafer chuck, a he māmā a paʻa hoʻi kāna mau koi mea. ʻOiai he mau waiwai māmā kūpono nā keramika silicon carbide, he paʻakikī ka hana ʻana i ia mau ʻāpana. I kēia manawa, hoʻohana nui nā mea hana lako kaapuni hoʻohui honua i nā mea e like me ka silica fused a me cordierite. Eia nō naʻe, me ka holomua o ka ʻenehana, ua hoʻokō nā loea Kina i ka hana ʻana i nā aniani huinaha silicon carbide keramika nui, ʻano paʻakikī, māmā loa, i hoʻopaʻa piha ʻia a me nā ʻāpana optical hana ʻē aʻe no nā mīkini photolithography. Hoʻouna ka photomask, i ʻike ʻia hoʻi ʻo ka aperture, i ka mālamalama ma o ka mask e hana i kahi ʻano ma ka mea photosensitive. Eia naʻe, ke hoʻomālamalama ka mālamalama EUV i ka mask, hoʻopuka ia i ka wela, e hoʻokiʻekiʻe ana i ka mahana i 600 a 1000 degere Celsius, hiki ke hōʻino i ka wela. No laila, waiho pinepine ʻia kahi papa o ka kiʻiʻoniʻoni SiC ma ka photomask. Nui nā ʻoihana haole, e like me ASML, i kēia manawa e hāʻawi i nā kiʻiʻoniʻoni me ka transmittance ma mua o 90% e hōʻemi i ka hoʻomaʻemaʻe a me ka nānā ʻana i ka wā e hoʻohana ai i ka photomask a hoʻomaikaʻi i ka pono a me ka huahana o nā mīkini photolithography EUV.

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Ka ʻoki ʻana i ka plasmaa ʻo nā Deposition Photomasks, i ʻike ʻia hoʻi he crosshairs, he hana nui ia o ka hoʻouna ʻana i ka mālamalama ma o ka mask a me ke kūkulu ʻana i kahi ʻano ma luna o ka mea photosensitive. Eia nō naʻe, ke hoʻomālamalama ka mālamalama EUV (extreme ultraviolet) i ka photomask, hoʻopuka ia i ka wela, e hoʻokiʻekiʻe ana i ka mahana ma waena o 600 a me 1000 degere Celsius, kahi e hōʻino ai i ka thermal. No laila, waiho pinepine ʻia kahi papa o ka ʻili silicon carbide (SiC) ma ka photomask e hōʻoluʻolu i kēia pilikia. I kēia manawa, ua hoʻomaka nā hui haole he nui, e like me ASML, e hāʻawi i nā kiʻiʻoniʻoni me ka transparency ma mua o 90% e hōʻemi i ka pono no ka hoʻomaʻemaʻe a me ka nānā ʻana i ka wā e hoʻohana ai i ka photomask, no laila e hoʻomaikaʻi ana i ka pono a me ka huahana o nā mīkini lithography EUV. Plasma Etching a meApo Hoʻopaʻa Waihonaa me nā mea ʻē aʻe I ka hana semiconductor, hoʻohana ke kaʻina hana etching i nā etchants wai a kinoea paha (e like me nā kinoea i loaʻa ka fluorine) i hoʻohuihui ʻia i loko o ka plasma e hoʻopō i ka wafer a wehe koho i nā mea i makemake ʻole ʻia a hiki i ka wā e mau ai ke ʻano kaapuni i makemake ʻia ma kawaferʻili. I ka hoʻohālikelike ʻana, ua like ka waiho ʻana o ka ʻili lahilahi me ka ʻaoʻao hope o ke kālai ʻana, me ka hoʻohana ʻana i kahi ʻano waiho ʻana e hoʻopaʻa i nā mea insulating ma waena o nā papa metala e hana i kahi ʻili lahilahi. ʻOiai ʻo nā kaʻina hana ʻelua e hoʻohana i ka ʻenehana plasma, ua maʻalahi lākou i nā hopena corrosive ma nā keʻena a me nā ʻāpana. No laila, pono nā ʻāpana i loko o nā lako e loaʻa ka pale plasma maikaʻi, ka pane haʻahaʻa i nā kinoea kālai fluorine, a me ka conductivity haʻahaʻa. ʻO nā ʻāpana lako kālai a me ka waiho ʻana maʻamau, e like me nā apo focus, i hana pinepine ʻia me nā mea e like me ka silicon a i ʻole quartz. Eia nō naʻe, me ka holomua o ka miniaturization circuit integrated, ke piʻi nei ke koi a me ke koʻikoʻi o nā kaʻina hana kālai i ka hana kaapuni integrated. Ma ka pae microscopic, pono ka silicon wafer etching pololei i ka plasma ikehu kiʻekiʻe e hoʻokō i nā laulā laina liʻiliʻi a me nā ʻano hana paʻakikī. No laila, ua lilo mālie ka chemical vapor deposition (CVD) silicon carbide (SiC) i mea uhi makemake ʻia no nā lako kālai a me ka waiho ʻana me kona mau waiwai kino a me ke kemika maikaʻi loa, ka maʻemaʻe kiʻekiʻe a me ke kūlike. I kēia manawa, ʻo nā ʻāpana CVD silicon carbide i nā lako kālai e komo pū me nā apo focus, nā poʻo ʻauʻau kinoea, nā pā a me nā apo lihi. I loko o nā lako waiho ʻana, aia nā uhi keʻena, nā liner keʻena a meNā substrates graphite i uhi ʻia me SIC.

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Ma muli o kona reactivity haʻahaʻa a me ka conductivity i nā kinoea chlorine a me fluorine etching,ʻO ka carbide silicon CVDua lilo i mea kūpono no nā ʻāpana e like me nā apo kālele i nā lako hana etching plasma.ʻO ka carbide silicon CVDʻO nā ʻāpana i loko o nā lako etching e komo pū me nā apo focus, nā poʻo ʻauʻau kinoea, nā pā, nā apo lihi, a pēlā aku. E lawe i nā apo focus ma ke ʻano he laʻana, he mau ʻāpana koʻikoʻi lākou i kau ʻia ma waho o ka wafer a pili pono me ka wafer. Ma ka hoʻopili ʻana i ka voltage i ke apo, ua kau ʻia ka plasma ma o ke apo ma luna o ka wafer, e hoʻomaikaʻi ana i ke ʻano like o ke kaʻina hana. Ma ke ʻano maʻamau, hana ʻia nā apo focus me ka silicon a i ʻole quartz. Eia nō naʻe, i ka holomua ʻana o ka miniaturization circuit integrated, ke hoʻomau nei ka noi a me ke koʻikoʻi o nā kaʻina hana etching i ka hana ʻana o ka circuit integrated. Ke hoʻomau nei ka piʻi ʻana o ka mana etching plasma a me nā koi ikehu, ʻoi aku hoʻi i nā lako etching plasma capacitively coupled (CCP), kahi e koi ai i ka ikehu plasma kiʻekiʻe. ʻO ka hopena, ke hoʻonui nei ka hoʻohana ʻana i nā apo focus i hana ʻia me nā mea silicon carbide.


Ka manawa hoʻouna: ʻOkakopa-29-2024
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