Fasahar daukar hoto ta fi mayar da hankali ne kan amfani da tsarin gani don fallasa tsarin da'ira a kan wafers na silicon. Daidaiton wannan tsari yana shafar aiki da yawan da'ira da aka haɗa kai tsaye. A matsayin ɗaya daga cikin manyan kayan aiki don kera guntu, na'urar lithography tana ɗauke da har zuwa ɗaruruwan dubban abubuwa. Duk sassan gani da abubuwan da ke cikin tsarin lithography suna buƙatar cikakken daidaito don tabbatar da aikin da'ira da daidaito.Tukwane na SiCan yi amfani da su a cikinwafer chucksda madubai murabba'i na yumbu.
Wafer chuckKwalbar wafer da ke cikin injin lithography tana ɗaukar wafer ɗin kuma tana motsa shi yayin aikin fallasawa. Daidaito tsakanin wafer ɗin da wafer ɗin yana da mahimmanci don kwafi tsarin da ke saman wafer ɗin daidai.Wafer ɗin SiCAn san chucks saboda sauƙin nauyi, kwanciyar hankali mai girma da ƙarancin faɗaɗa zafi, wanda zai iya rage nauyin inertial da inganta ingancin motsi, daidaiton matsayi da kwanciyar hankali.
Madubin murabba'i na yumbu A cikin injin lithography, daidaitawar motsi tsakanin wafer chuck da matakin abin rufe fuska yana da mahimmanci, wanda ke shafar daidaiton lithography da yawan amfanin ƙasa kai tsaye. Mai nuna murabba'i muhimmin sashi ne na tsarin auna matsayin ra'ayoyin duba wafer chuck, kuma buƙatun kayan sa suna da sauƙi kuma masu tsauri. Duk da cewa yumburan silicon carbide suna da kyawawan halaye masu sauƙi, kera irin waɗannan abubuwan yana da ƙalubale. A halin yanzu, manyan masana'antun kayan aikin kewaye na duniya waɗanda aka haɗa galibi suna amfani da kayan kamar fused silica da cordierite. Duk da haka, tare da ci gaban fasaha, ƙwararrun China sun cimma ƙera manyan madubai na yumbu na silicon carbide mai girman girma, mai siffa mai rikitarwa, mai sauƙin nauyi, da sauran kayan gani masu aiki don injunan photolithography. Makullin photomask, wanda aka fi sani da buɗewa, yana watsa haske ta hanyar abin rufe fuska don samar da tsari akan kayan photolithography. Duk da haka, lokacin da hasken EUV ya haskaka abin rufe fuska, yana fitar da zafi, yana ɗaga zafin jiki zuwa digiri 600 zuwa 1000 Celsius, wanda zai iya haifar da lalacewar zafi. Saboda haka, ana sanya wani Layer na fim ɗin SiC akan abin rufe fuska. Kamfanoni da yawa na ƙasashen waje, kamar ASML, yanzu suna ba da fina-finai masu watsawa sama da kashi 90% don rage tsaftacewa da dubawa yayin amfani da abin rufe fuska da kuma inganta inganci da yawan samfurin injunan daukar hoto na EUV.
Gyaran Plasmada kuma Maɓallan Photomasks na Deposition, waɗanda aka fi sani da crosshairs, suna da babban aikin watsa haske ta hanyar abin rufe fuska da kuma samar da tsari akan kayan da ke da tasirin photosensitive. Duk da haka, lokacin da hasken EUV (matsanancin ultraviolet) ya haskaka abin rufe fuska, yana fitar da zafi, yana ɗaga zafin zuwa tsakanin digiri 600 zuwa 1000 na Celsius, wanda zai iya haifar da lalacewar zafi. Saboda haka, yawanci ana sanya wani Layer na fim ɗin silicon carbide (SiC) akan abin rufe fuska don rage wannan matsala. A halin yanzu, kamfanoni da yawa na ƙasashen waje, kamar ASML, sun fara samar da fina-finai da bayyananniyar fiye da kashi 90% don rage buƙatar tsaftacewa da dubawa yayin amfani da abin rufe fuska, ta haka ne inganta inganci da yawan samfuran na'urorin lithography na EUV. Etching na Plasma daZoben Mayar da Hankali ga Ma'aunin Bayanida sauransu A cikin kera semiconductor, tsarin etching yana amfani da enchants na ruwa ko iskar gas (kamar iskar gas mai ɗauke da fluorine) waɗanda aka haɗa cikin ion zuwa cikin plasma don jefa wafer ɗin a cikin wafer ɗin kuma cire kayan da ba a so ba daga zaɓin har sai tsarin da'irar da ake so ya kasance akan da'irar.wafer ɗin wafersaman. Sabanin haka, cire fim ɗin siriri yana kama da gefen baya na etching, ta amfani da hanyar deposition don tara kayan rufi tsakanin yadudduka na ƙarfe don samar da siririn fim. Tunda duka hanyoyin suna amfani da fasahar plasma, suna da saurin kamuwa da tasirin lalata akan ɗakuna da sassan. Saboda haka, ana buƙatar abubuwan da ke cikin kayan aikin su sami juriya mai kyau ga plasma, ƙarancin amsawa ga iskar gas ɗin etching fluorine, da ƙarancin ikon sarrafawa. Abubuwan kayan aikin etching da deposition na gargajiya, kamar zoben mayar da hankali, yawanci ana yin su ne da kayan kamar silicon ko quartz. Duk da haka, tare da ci gaban ƙaramin da'ira da aka haɗa, buƙata da mahimmancin hanyoyin etching a cikin kera da'ira da aka haɗa suna ƙaruwa. A matakin microscopic, ainihin etching silicon wafer yana buƙatar plasma mai ƙarfi don cimma ƙananan faɗin layi da tsarin na'ura mai rikitarwa. Saboda haka, deposition na tururi na sinadarai (CVD) silicon carbide (SiC) a hankali ya zama kayan shafa da aka fi so don etching da deposition kayan aiki tare da kyawawan halayen jiki da sinadarai, tsarki da daidaito. A halin yanzu, abubuwan da ke cikin CVD silicon carbide a cikin kayan etching sun haɗa da zoben mayar da hankali, kawunan shawa na gas, tire da zoben gefu. A cikin kayan aikin ajiya, akwai murfin ɗakin, layin ɗakin da kuma murfin ɗakinAbubuwan da aka yi wa fenti da aka yi wa fenti da SIC graphite.
Saboda ƙarancin amsawa da kuma watsawa ga iskar gas mai ƙonewa ta chlorine da fluorine,CVD silicon carbideya zama kayan da ya dace don abubuwan da aka haɗa kamar zoben mayar da hankali a cikin kayan aikin etching na plasma.CVD silicon carbideAbubuwan da ke cikin kayan aikin etching sun haɗa da zoben mayar da hankali, kawunan shawa na gas, tire, zoben gefe, da sauransu. A ɗauki zoben mayar da hankali a matsayin misali, su manyan abubuwan da aka sanya a waje da wafer kuma suna hulɗa kai tsaye da wafer. Ta hanyar amfani da ƙarfin lantarki a cikin zoben, ana mayar da plasma ta cikin zoben a kan wafer, yana inganta daidaiton aikin. A al'ada, zoben mayar da hankali ana yin su ne da silicon ko quartz. Duk da haka, yayin da ƙaramin da'ira mai haɗaka ke ci gaba, buƙata da mahimmancin hanyoyin etching a cikin kera da'ira mai haɗaka yana ci gaba da ƙaruwa. Ƙarfin etching da buƙatun makamashi na etching na plasma suna ci gaba da ƙaruwa, musamman a cikin kayan etching na plasma mai haɗin kai (CCP), wanda ke buƙatar ƙarin kuzarin plasma. Sakamakon haka, amfani da zoben mayar da hankali da aka yi da kayan silicon carbide yana ƙaruwa.
Lokacin Saƙo: Oktoba-29-2024