Ubuchwepheshe be-Photolithography bugxile kakhulu ekusebenziseni izinhlelo zokukhanya ukuze kuvezwe amaphethini wesekethe kuma-silicon wafers. Ukunemba kwale nqubo kuthinta ngqo ukusebenza kanye nokukhiqiza kwamasekethe ahlanganisiwe. Njengenye yemishini ephezulu yokukhiqiza ama-chip, umshini we-lithography uqukethe izingxenye ezifika kumakhulu ezinkulungwane. Zombili izingxenye zokukhanya kanye nezingxenye ezingaphakathi kohlelo lwe-lithography zidinga ukunemba okuphezulu kakhulu ukuqinisekisa ukusebenza kwesekethe kanye nokunemba.Izitsha zobumba ze-SiCzisetshenziswe ku-ama-wafer chuckskanye nezibuko zesikwele ezenziwe ngobumba.
I-wafer chuckI-wafer chuck emshinini we-lithography ithwala futhi inyakazise i-wafer ngesikhathi senqubo yokuvezwa. Ukuqondana okunembile phakathi kwe-wafer ne-chuck kubalulekile ukuze kukopishwe ngokunembile iphethini ebusweni be-wafer.I-SiC waferAma-chuck aziwa ngokuqina kwawo okulula, okunesilinganiso esiphakeme kanye ne-coefficient yokukhulisa ukushisa ephansi, okunganciphisa imithwalo ye-inertial futhi kuthuthukise ukusebenza kahle kokunyakaza, ukunemba kokubeka kanye nokuqina.
Isibuko sesikwele se-ceramic Emshinini we-lithography, ukuvumelanisa ukunyakaza phakathi kwe-wafer chuck nesigaba se-mask kubalulekile, okuthinta ngqo ukunemba kanye nokukhiqiza kwe-lithography. I-reflector yesikwele iyisici esibalulekile sohlelo lokulinganisa impendulo ye-wafer chuck yokuskena, futhi izidingo zayo zezinto zilula futhi ziqinile. Nakuba i-silicon carbide ceramics inezakhiwo ezinhle kakhulu ezilula, ukukhiqiza izingxenye ezinjalo kuyinselele. Njengamanje, abakhiqizi bemishini yesekethe ehlanganisiwe yamazwe ngamazwe basebenzisa kakhulu izinto ezifana ne-fused silica ne-cordierite. Kodwa-ke, ngokuthuthuka kobuchwepheshe, ochwepheshe baseShayina bafinyelele ekukhiqizweni kwezibuko zesikwele ze-silicon carbide ceramic ezinkulu, ezibunjwe ngendlela eyinkimbinkimbi, ezilula kakhulu, ezivalwe ngokuphelele kanye nezinye izingxenye ezisebenzayo ze-optical zemishini ye-photolithography. I-photomask, eyaziwa nangokuthi i-aperture, idlulisela ukukhanya nge-mask ukuze yakhe iphethini ezintweni ezizwela ukukhanya. Kodwa-ke, lapho ukukhanya kwe-EUV kukhanyisa i-mask, ikhipha ukushisa, iphakamise izinga lokushisa libe ngu-600 kuya ku-1000 degrees Celsius, okungase kubangele umonakalo wokushisa. Ngakho-ke, ungqimba lwefilimu ye-SiC luvame ukufakwa ku-photomask. Izinkampani eziningi zakwamanye amazwe, njenge-ASML, manje zinikeza amafilimu anokudluliselwa okungaphezu kuka-90% ukunciphisa ukuhlanza nokuhlola ngesikhathi sokusetshenziswa kwe-photomask nokuthuthukisa ukusebenza kahle kanye nomkhiqizo wemishini ye-EUV photolithography.
Ukuqopha nge-Plasmakanye ne-Deposition Photomasks, eyaziwa nangokuthi ama-crosshair, inomsebenzi oyinhloko wokudlulisa ukukhanya ngemaski nokwenza iphethini ezintweni ezithinta ukukhanya. Kodwa-ke, lapho ukukhanya kwe-EUV (extreme ultraviolet) kukhanyisa i-photomask, kukhipha ukushisa, kuphakamise izinga lokushisa libe phakathi kwama-degree Celsius angu-600 no-1000, okungase kubangele umonakalo wokushisa. Ngakho-ke, ungqimba lwefilimu ye-silicon carbide (SiC) luvame ukufakwa ku-photomask ukuze kuncishiswe le nkinga. Njengamanje, izinkampani eziningi zakwamanye amazwe, njenge-ASML, seziqalile ukunikeza amafilimu ukukhanya okungaphezu kuka-90% ukunciphisa isidingo sokuhlanza nokuhlola ngesikhathi sokusetshenziswa kwe-photomask, ngaleyo ndlela kuthuthukiswe ukusebenza kahle kanye nomkhiqizo wemishini ye-lithography ye-EUV. I-Plasma Etching kanyeIndandatho Yokugxila Kokufaka Indawokanye nabanye Ekwenziweni kwe-semiconductor, inqubo yokuqopha isebenzisa izinto zokufaka uketshezi noma igesi (njengegesi equkethe i-fluorine) ezifakwe i-ion zibe yi-plasma ukuze ziqhumise i-wafer futhi zisuse ngokukhetha izinto ezingafuneki kuze kube yilapho iphethini yesekethe efiselekayo ihlala ku-i-waferUbuso. Ngokuphambene nalokho, ukufakwa kwefilimu encane kufana nohlangothi olungemuva lokusika, kusetshenziswa indlela yokufaka ukufaka izinto zokuvikela phakathi kwezingqimba zensimbi ukuze kwakhiwe ifilimu encane. Njengoba zombili lezi zinqubo zisebenzisa ubuchwepheshe be-plasma, zithambekele emiphumeleni yokubola emakamelweni nasezingxeni. Ngakho-ke, izingxenye ezingaphakathi kwemishini ziyadingeka ukuthi zibe nokumelana okuhle kwe-plasma, ukusebenza okuphansi kumagesi okusika i-fluorine, kanye nokuqhuba okuphansi komoya. Izingxenye zemishini yokusika nokubeka yendabuko, njengendandatho yokugxila, zivame ukwenziwa ngezinto ezifana ne-silicon noma i-quartz. Kodwa-ke, ngokuthuthuka kwe-miniaturization yesekethe ehlanganisiwe, isidingo nokubaluleka kwezinqubo zokusika ekukhiqizweni kwesekethe ehlanganisiwe kuyanda. Ezingeni elincane kakhulu, ukusika kwe-silicon wafer okunembile kudinga i-plasma enamandla aphezulu ukuze kufezwe ububanzi bomugqa obuncane kanye nezakhiwo zedivayisi eziyinkimbinkimbi kakhulu. Ngakho-ke, ukufakwa kwe-chemical vapor deposition (CVD) i-silicon carbide (SiC) kancane kancane kube yinto ekhethwayo yokusika imishini yokusika nokubeka ngezakhiwo zayo ezinhle kakhulu zomzimba nezamakhemikhali, ubumsulwa obuphezulu kanye nokufana. Njengamanje, izingxenye ze-CVD silicon carbide emishinini yokusika zifaka izindandatho zokugxila, amakhanda eshawa egesi, amathreyi kanye nezindandatho zomphetho. Emishinini yokufaka, kunezembozo zegumbi, ama-chamber liner kanyeIzisekelo ze-graphite ezimbozwe yi-SIC.
Ngenxa yokusabela kwayo okuphansi kanye nokuqhuba kwayo amandla kumagesi okubhoboza i-chlorine kanye ne-fluorine,I-CVD silicon carbidesekuyinto efanelekile yezingxenye ezifana namasongo okugxila emishinini yokuqopha i-plasma.I-CVD silicon carbideIzingxenye emishinini yokuqopha zifaka phakathi amasongo okugxila, amakhanda okugeza ngegesi, amathileyi, amasongo onqenqema, njll. Thatha amasongo okugxila njengesibonelo, ayizingxenye ezibalulekile ezibekwa ngaphandle kwe-wafer futhi zithintane ngqo ne-wafer. Ngokusebenzisa i-voltage endandatho, i-plasma igxila ngendandatho iye ku-wafer, okuthuthukisa ukufana kwenqubo. Ngokwesiko, amasongo okugxila enziwe nge-silicon noma i-quartz. Kodwa-ke, njengoba i-miniaturization yesekethe ehlanganisiwe ithuthuka, isidingo kanye nokubaluleka kwezinqubo zokuqopha ekukhiqizweni kwesekethe ehlanganisiwe kuyaqhubeka nokukhula. Amandla okuqopha nge-plasma kanye nezidingo zamandla ziyaqhubeka nokwenyuka, ikakhulukazi emishinini yokuqopha ye-plasma (CCP) ehlanganisiwe kahle, edinga amandla aphezulu e-plasma. Ngenxa yalokho, ukusetshenziswa kwamasongo okugxila enziwe ngezinto ze-silicon carbide kuyanda.
Isikhathi sokuthunyelwe: Okthoba-29-2024