Itekhnoloji ye-Photolithography igxile kakhulu ekusebenziseni iinkqubo ze-optical ukuveza iipateni zesekethe kwii-silicon wafers. Ukuchaneka kwale nkqubo kuchaphazela ngokuthe ngqo ukusebenza kunye nokuveliswa kweesekethe ezidibeneyo. Njengenye yezixhobo eziphambili zokwenza iitshiphusi, umatshini we-lithography uqulethe ukuya kuthi ga kumakhulu amawaka eenxalenye. Zombini iinxalenye ze-optical kunye neenxalenye ezikwinkqubo ye-lithography zifuna ukuchaneka okuphezulu kakhulu ukuqinisekisa ukusebenza kwesekethe kunye nokuchaneka.Iiseramikhi zeSiCzisetyenziswe kwiii-wafer chuckskunye nezipili zesikwere zeseramikhi.
I-wafer chuckI-wafer chuck ekumatshini we-lithography iyathwala kwaye ihambise i-wafer ngexesha lenkqubo yokuvezwa. Ukulungelelaniswa ngokuchanekileyo phakathi kwe-wafer kunye ne-chuck kubalulekile ukuze kuphindaphindwe ngokuchanekileyo ipateni kumphezulu we-wafer.I-SiC waferIichucks zaziwa ngokukhanya kwazo, ukuzinza okuphezulu kunye nokwanda kobushushu obuphantsi, okunokunciphisa imithwalo ye-inertial kunye nokuphucula ukusebenza kakuhle kwentshukumo, ukuchaneka kokubeka kunye nozinzo.
Isibuko sesikwere seCeramic Kumatshini we-lithography, ulungelelwaniso lwentshukumo phakathi kwe-wafer chuck kunye nesigaba semaski lubalulekile, oluchaphazela ngokuthe ngqo ukuchaneka kwe-lithography kunye nemveliso. I-square reflector yinxalenye ebalulekileyo yenkqubo yokulinganisa impendulo ye-wafer chuck scanning positioning, kwaye iimfuno zayo zezixhobo zilula kwaye zingqongqo. Nangona ii-silicon carbide ceramics zineempawu ezifanelekileyo zokukhanya, ukuvelisa ezo zinto kunzima. Okwangoku, abavelisi bezixhobo zesekethe ezihlanganisiweyo zamazwe ngamazwe basebenzisa kakhulu izixhobo ezifana ne-fused silica kunye ne-cordierite. Nangona kunjalo, ngokuqhubela phambili kwetekhnoloji, iingcali zaseTshayina ziphumelele ekuveliseni izibuko zesikwere ze-silicon carbide ceramic ezinkulu, ezimile ngendlela entsonkothileyo, ezikhaphukhaphu kakhulu, ezivalekileyo ngokupheleleyo kunye nezinye izinto ezisebenzayo ze-optical kwiimashini ze-photolithography. I-photomask, eyaziwa ngokuba yi-aperture, idlulisela ukukhanya ngemaski ukwenza ipateni kwizinto ezibonisa ukukhanya. Nangona kunjalo, xa ukukhanya kwe-EUV kukhanyisa imaski, ikhupha ubushushu, inyusa ubushushu ukuya kwi-600 ukuya kwi-1000 degrees Celsius, enokubangela umonakalo kubushushu. Ke ngoko, umaleko wefilimu ye-SiC uhlala ubekwa kwi-photomask. Iinkampani ezininzi zamanye amazwe, ezifana ne-ASML, ngoku zibonelela ngeefilimu ezinokuhanjiswa okungaphezulu kwe-90% ukunciphisa ukucoca nokuhlola ngexesha lokusetyenziswa kwe-photomask nokuphucula ukusebenza kakuhle kunye nemveliso yemveliso yoomatshini be-EUV photolithography.
Ukukrola ngePlasmakunye neDeposition Photomasks, ezaziwa ngokuba zii-crosshairs, zinomsebenzi oyintloko wokudlulisa ukukhanya ngemaski nokwenza ipateni kwizinto ezibonisa ukukhanya. Nangona kunjalo, xa ukukhanya kwe-EUV (extreme ultraviolet) kukhanyisa i-photomask, ikhupha ubushushu, inyuse ubushushu bube phakathi kwama-600 kunye nama-1000 degrees Celsius, nto leyo enokubangela umonakalo kubushushu. Ke ngoko, umaleko wefilimu ye-silicon carbide (SiC) uhlala ubekwa kwi-photomask ukunciphisa le ngxaki. Okwangoku, iinkampani ezininzi zangaphandle, ezifana ne-ASML, ziqalile ukubonelela iifilimu ngokucaca okungaphezulu kwama-90% ukunciphisa imfuneko yokucoca nokuhlola ngexesha lokusetyenziswa kwe-photomask, ngaloo ndlela kuphuculwe ukusebenza kakuhle kunye nemveliso yemveliso yoomatshini be-lithography be-EUV. I-Plasma Etching kunyeIsangqa Sokugxila Kwindawo Yokubeka Izintokunye nabanye Kwimveliso ye-semiconductor, inkqubo yokugrumba isebenzisa izinto zokucoca ezingamanzi okanye zegesi (ezifana neegesi ezine-fluorine) ezifakwe kwi-plasma ukuze ziqhumise i-wafer kwaye zisuse ngokukhetha izinto ezingafunekiyo de ipateni yesekethe efunekayo ihlale kwi-i-waferumphezulu. Ngokwahlukileyo koko, ukufakwa kwefilimu encinci kufana necala elingasemva lokugrumba, kusetyenziswa indlela yokufaka ukuze kubekwe izinto zokukhusela phakathi kweengqimba zesinyithi ukuze kwenziwe ifilimu encinci. Ekubeni zombini ezi nkqubo zisebenzisa iteknoloji yeplasma, zinomngcipheko wemiphumo yokubola kwiigumbi nakwiinxalenye. Ke ngoko, izinto ezingaphakathi kwezixhobo kufuneka zibe nokumelana okuhle kweplasma, ukusebenza okuphantsi kwiigesi zokugrumba zefluorine, kunye nokuqhuba okuphantsi kombane. Izinto zesixhobo sokugrumba kunye nokubeka izinto, ezifana neeringi zokugxila, zihlala zenziwe ngezinto ezifana nesilicon okanye iquartz. Nangona kunjalo, ngokuqhubela phambili kwe-miniaturization yesekethe edibeneyo, imfuno kunye nokubaluleka kweenkqubo zokugrumba kwimveliso yesekethe edibeneyo kuyanda. Kwinqanaba le-microscopic, ukugrumba kwe-silicon wafer echanekileyo kufuna i-plasma enamandla aphezulu ukuze kufezekiswe ububanzi bomgca omncinci kunye nezakhiwo zesixhobo ezintsonkothileyo. Ke ngoko, ukugrumba kwe-chemical vapor deposition (CVD) i-silicon carbide (SiC) kancinci kancinci ibe yinto ekhethwayo yokugquma izixhobo zokugrumba kunye nokubeka izinto ngeempawu zayo zomzimba nezekhemikhali ezintle, ubunyulu obuphezulu kunye nokufana. Okwangoku, izinto ze-CVD silicon carbide kwizixhobo zokugrumba ziquka iiringi zokugxila, iintloko zeshawa zegesi, iitreyi kunye neeringi zomphetho. Kwizixhobo zokubeka izinto, kukho izigqubuthelo zegumbi, ii-chamber liners kunyeIi-substrates zegrafiti ezigqunywe yi-SIC.
Ngenxa yokuba iphantsi kakhulu ekusebenzeni kwayo kunye nokuqhuba kwayo iigesi ze-chlorine kunye ne-fluorine etching,I-CVD silicon carbideiye yaba yinto efanelekileyo kwizinto ezifana neeringi zokugxila kwizixhobo zokugrumba ngeplasma.I-CVD silicon carbideIzinto ezikwizixhobo zokugrumba ziquka iiringi zokugxila, iintloko zeshawa zegesi, iitreyi, iiringi zomphetho, njl. Umzekelo, ziiringi zokugxila, zizinto ezibalulekileyo ezibekwe ngaphandle kwe-wafer kwaye zidibene ngqo ne-wafer. Ngokusebenzisa i-voltage kwiringi, i-plasma igxilwe ngeringi kwi-wafer, nto leyo ephucula ukufana kwenkqubo. Ngokwesiko, iiringi zokugxila zenziwe nge-silicon okanye i-quartz. Nangona kunjalo, njengoko i-miniaturization yesekethe edibeneyo iqhubeka, imfuno kunye nokubaluleka kweenkqubo zokugrumba kwimveliso yesekethe edibeneyo iyaqhubeka nokwanda. Amandla okugrumba e-plasma kunye neemfuno zamandla ziyaqhubeka nokunyuka, ngakumbi kwizixhobo zokugrumba ze-plasma (CCP) ezidityanisiweyo, ezifuna amandla aphezulu e-plasma. Ngenxa yoko, ukusetyenziswa kweeringi zokugxila ezenziwe ngezinto ze-silicon carbide kuyanda.
Ixesha leposi: Okthobha-29-2024