SiC Yokutidwa ndi Graphite Halfmoon Part Yopangira Silicon Carbide Epitaxial Furnace

SiC Coated Graphite Halfmoon Part ya Silicon Carbide Epitaxial Furnace Chithunzi Chodziwika

Kufotokozera Kwachidule:

VET Energy ndi kampani yopanga komanso yogulitsa zinthu zofunika kwambiri mu ng'anjo za epitaxial za silicon carbide. Gawo lathu la graphite lokhala ndi SiC lomwe lili ndi theka la mwezi limagwiritsa ntchito graphite yoyera kwambiri pamodzi ndi ukadaulo wapamwamba wa CVD. Yapangidwira malo otentha kwambiri komanso owononga kwambiri a epitaxial. Graphite yoyera kwambiri imapatsa gawoli mphamvu yabwino kwambiri yolimbana ndi kutentha kwambiri (>1600℃) komanso kukhazikika kwa kutentha, kuonetsetsa kuti kutentha kuli kofanana; chophimba cha CVD chimapanga gawo loteteza pamwamba kudzera muukadaulo wa CVD, ndikuwonjezera kwambiri mphamvu zotsutsana ndi okosijeni ndi zotsutsana ndi kuphulika, ndikuwonjezera moyo wautumiki ndi nthawi zoposa zitatu.

Zipangizo:Graphite yoyera kwambiri

Kuyeretsa:＜5ppm

Chophimba:CVD-SiC kapena CVD-TaC

Kusintha:Chitofu cha mtundu kapena OEM

Tumizani imelo kwa ife Tsitsani ngati PDF

Tsatanetsatane wa Zamalonda

Ma tag a Zamalonda

SiC yokutidwa ndi Graphite Halfmoon Partndi gawo lofunika kwambiri lomwe limagwiritsidwa ntchito popanga zinthu za semiconductor, makamaka pazida za SiC epitaxial. Timagwiritsa ntchito ukadaulo wathu wovomerezeka kuti tipange gawo la halfmoon loyera kwambiri, lofanana bwino ndi utoto komanso nthawi yabwino yogwirira ntchito, komanso lolimba kwambiri pa mankhwala komanso lolimba pa kutentha.

Zida zoyambira: graphite yoyera kwambiri
Zofunikira pa kuyera:kuchuluka kwa mpweya ≥99.99%, kuchuluka kwa phulusa ≤5ppm, kuonetsetsa kuti palibe zonyansa zomwe zimalowa kuti ziipitse gawo la epitaxial kutentha kwambiri.
Ubwino wa magwiridwe antchito:
Kutentha kwambiri:Kutentha kwa mpweya pa kutentha kwa chipinda kumafika pa 150W/(m・K), komwe kuli pafupi ndi mulingo wa mkuwa ndipo kumatha kusamutsa kutentha mwachangu.
Kuchuluka kochepa kwa kukula:5 × 10^-6/℃ (25-1000℃), yofanana ndi silicon carbide substrate (4.2×10^-6/℃), kuchepetsa kusweka kwa chophimba chomwe chimayambitsidwa ndi kutentha.
Kulondola kwa kukonza:Kulekerera kwa ±0.05mm kumachitika kudzera mu makina a CNC kuti chitseko cha chipindacho chitseguke.

Kugwiritsa ntchito kwa CVD SiC ndi CVD TaC mosiyanasiyana

Kuphimba	Ndondomeko	Kuyerekeza	Ntchito yachizolowezi
CVD-SiC	Kutentha: 1000-1200℃ Kupanikizika: 10-100 Torr	Kulimba HV2500, makulidwe 50-100um, kukana kwabwino kwambiri kwa okosijeni (kokhazikika pansi pa 1600℃)	Ziwiya za epitaxial za Universal, zoyenera mlengalenga wamba monga hydrogen ndi silane
CVD-TaC	Kutentha: 1600-1800℃ Kupanikizika: 1-10 Torr	Kulimba HV3000, makulidwe 20-50um, osapsa ndi dzimbiri kwambiri (amatha kupirira mpweya wowononga monga HCl, NH₃, ndi zina zotero.)	Malo owononga kwambiri (monga GaN epitaxy ndi zida zokokera), kapena njira zapadera zomwe zimafuna kutentha kwambiri kwa 2600°C

Kuyang'anira khalidwe

Kukhuthala kwa chophimba: laser thickness gauge (kulondola ± 1um) kapena SEM cross-sectional analysis.
Mphamvu ya chigwirizano: mayeso okanda (kulemera kofunikira > 50N) kapena mayeso a ultrasound (liwiro la phokoso > 5000m/s).
Kukana dzimbiri: kuchuluka kwa kutayika kwa unyinji (<0.1 mg/cm²・h) komwe kunayesedwa mumlengalenga wa HCl (5 vol%, 1600℃).

VET Energy ndi katswiri wopanga zinthu zomwe zimayang'ana kwambiri pa kafukufuku ndi chitukuko komanso kupanga zinthu zapamwamba kwambiri monga graphite, silicon carbide, quartz, komanso mankhwala monga SiC ❖ kuyanika, TaC ❖ kuyanika, galasi carbon ❖ kuyanika, pyrolytic carbon ❖ kuyanika, ndi zina zotero. Zogulitsazi zimagwiritsidwa ntchito kwambiri mu photovoltaic, semiconductor, new energy, metallurgy, ndi zina zotero.

Gulu lathu laukadaulo limachokera ku mabungwe apamwamba ofufuza za m'dziko muno, ndipo lingakupatseni mayankho aukadaulo ambiri.

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