SiC Coated Graphite Half Moon Part ndi Assembly For SiC Epitaxy

Kufotokozera Kwachidule:

VET Energy ndi akatswiri opanga komanso ogulitsa zigawo zikuluzikulu za ng'anjo za silicon carbide epitaxial. Msonkhano wathu wa theka la mwezi umagwiritsa ntchito graphite yoyera kwambiri yophatikizidwa ndi ukadaulo wapamwamba wokutira wa CVD. Amapangidwira malo otentha kwambiri komanso owononga kwambiri epitaxial. graphite mkulu-kuyera amapereka chigawo chabwino kwambiri kutentha kukana (> 1600 ℃) ndi bata matenthedwe, kuonetsetsa matenthedwe m'munda chimodzimodzi; Kupaka kwa CVD kumapanga gawo lodzitchinjiriza pamtunda kudzera muukadaulo wa CVD, kuwongolera kwambiri anti-oxidation ndi anti-etching properties, ndikukulitsa moyo wautumiki nthawi zopitilira 3.

Zofunika:graphite yapamwamba kwambiri

Chithandizo:CVD-SiC kapena CVD-TaC zokutira

Kusintha mwamakonda:Likupezeka

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Zogulitsa Tags

SiC Coated Graphite Halfmoon Partndi gawo lofunikira lomwe limagwiritsidwa ntchito popanga semiconductor, makamaka zida za SiC epitaxial. Mapangidwe ake ndi zinthu zakuthupi zimatsimikizira mwachindunji ubwino ndi kupanga kwa ma epitaxial wafers.

Kumanga kwa chipinda chochitirapo kanthu:
Gawo la theka la mwezi limapangidwa ndi magawo awiri, kumtunda ndi pansi, komwe kumangiriridwa pamodzi kuti apange chipinda chotsekedwa chotsekedwa, chomwe chimakhala ndi silicon carbide substrate (kawirikawiri 4H-SiC kapena 6H-SiC) ndipo imakwaniritsa kukula kwa epitaxial mwa kuyang'anira bwino gawo la gasi (monga kusakaniza kwa H, ₂, H₂).
Kuwongolera kutentha:
Chitsimikizo chapamwamba cha graphite chophatikizana ndi chowotcha chotenthetsera chotenthetsera chimatha kusunga kutentha kwa chipinda (mkati mwa ± 5 ° C) pa kutentha kwakukulu kwa 1500-1700 ° C kuti zitsimikizire kugwirizana kwa epitaxial wosanjikiza makulidwe.
Chitsogozo cha Airflow:
Popanga malo olowera mpweya ndi potulukira (monga mbali ya mpweya wolowera ndi mpweya wotuluka pamwamba pa thupi la ng'anjo yopingasa), momwe mpweya wa laminar umayendera umatsogoleredwa ndi gawo lapansi kuti muchepetse kuwonongeka kwa kukula chifukwa cha chipwirikiti.

Zida zoyambira: graphite yapamwamba kwambiri
Zofunikira pachiyero:mpweya wa carbon ≥99.99%, phulusa la ≤5ppm, kuonetsetsa kuti palibe zonyansa zomwe zimadetsedwa kuti ziwononge epitaxial wosanjikiza pa kutentha kwakukulu.
Ubwino wamachitidwe:
High matenthedwe conductivity:Kutentha kwa kutentha kumafika 150W / (m · K), yomwe ili pafupi ndi mlingo wa mkuwa ndipo imatha kusamutsa kutentha.
Coefficient yokulira yocheperako:5 × 10 pa^-6/ ℃ (25-1000 ℃), yofananira ndi silicon carbide gawo lapansi (4.2 × 10)^-6/ ℃), kuchepetsa kung'ambika kwa zokutira chifukwa cha kupsinjika kwamafuta.
Kulondola kokonza:Kulekerera kwapakati kwa ± 0.05mm kumatheka kudzera mu makina a CNC kuti atsimikizire kusindikizidwa kwa chipindacho.

Kugwiritsa ntchito kosiyana kwa CVD SiC ndi CVD TaC

Kupaka	Njira	Kuyerekezera	Ntchito yeniyeni
CVD-SiC	Kutentha: 1000-1200 ℃Kupanikizika: 10-100 Torr	Kuuma HV2500, makulidwe 50-100um, kukana kwambiri makutidwe ndi okosijeni (wokhazikika pansipa 1600 ℃)	Universal epitaxial ng'anjo, oyenera ochiritsira atmospheres monga hydrogen ndi silane
CVD-TaC	Kutentha: 1600-1800 ℃Kupanikizika: 1-10 Torr	Kuuma HV3000, makulidwe 20-50um, osachita dzimbiri (amatha kupirira mpweya wowononga monga HCl, NH₃, etc.)	Malo owononga kwambiri (monga GaN epitaxy ndi etching zida), kapena njira zapadera zomwe zimafuna kutentha kwambiri kwa 2600 ° C.

VET Energy ndi katswiri wopanga moganizira R&D ndi kupanga apamwamba-mapeto zipangizo zapamwamba monga graphite, pakachitsulo carbide, khwatsi, komanso mankhwala zinthu monga SiC ❖ kuyanika, TaC ❖ kuyanika, magalasi mpweya ❖ kuyanika, pyrolytic mpweya ❖ kuyanika, etc. Mankhwalawa amagwiritsidwa ntchito kwambiri mu photovoltaic, semiconductor, mphamvu zatsopano, zitsulo, etc.

Gulu lathu laukadaulo limachokera ku mabungwe apamwamba ofufuza zapakhomo, litha kukupatsirani mayankho aukadaulo.

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