Umgaqo we-PECVD graphite boat kwi-solar cell (coating) | VET Energy

Okokuqala, kufuneka saziI-PECVD(Plasma Enhanced Chemical Vapor Deposition). I-Plasma kukwanda kokuhamba kobushushu kwee-molecules zezinto. Ukungqubana phakathi kwazo kuya kubangela ukuba ii-molecules zegesi zibe yi-ionized, kwaye izinto ziya kuba ngumxube wee-ions ezintle ezihamba ngokukhululekileyo, ii-electron kunye namasuntswana angathathi cala asebenzisana.

 

Kuqikelelwa ukuba izinga lokulahleka kokukhanya kumphezulu wesilicon liphezulu malunga ne-35%. Ifilimu echasene nokukhanya inokuphucula kakhulu izinga lokusetyenziswa kokukhanya kwelanga yiseli yebhetri, nto leyo enceda ukwandisa uxinano lwangoku oluveliswa yifoto kwaye ngaloo ndlela iphucule ukusebenza kakuhle kokuguqulwa. Kwangaxeshanye, ihydrogen ekwifilimu idlulisa umphezulu weseli yebhetri, inciphisa izinga lokuphinda-phinda komphezulu we-emitter junction, inciphisa umbane omnyama, inyusa i-open circuit voltage, kwaye iphucula ukusebenza kakuhle kokuguqulwa kwe-photoelectric. Ukufakelwa ngokukhawuleza kobushushu obuphezulu kwinkqubo yokutsha kwaphula ezinye iibhondi ze-Si-H kunye ne-NH, kwaye i-H ekhululekileyo iqinisa ngakumbi ukudlula kwebhetri.

 

Ekubeni izixhobo zesilicon ezikumgangatho we-photovoltaic ngokungenakuphepheka ziqulathe ukungcola okuninzi kunye neziphene, ubomi bokuthwala obuncinci kunye nobude bokusasazwa kwi-silicon buyancitshiswa, nto leyo ebangela ukwehla kokusebenza kokuguqulwa kwebhetri. I-H inokusabela kunye neziphene okanye ukungcola kwi-silicon, ngaloo ndlela idlulisela ibhendi yamandla kwi-bandgap kwi-valence band okanye kwi-conduction band.

 

1. Umgaqo we-PECVD

Inkqubo yePECVD luludwe lweejenereyitha ezisebenzisaInqanawa yegrafayithi yePECVD kunye nee-exciters zeplasma eziphindaphindayo. Ijenereyitha yeplasma ifakwe ngqo embindini wepleyiti yokugquma ukuze iphendule phantsi koxinzelelo oluphantsi kunye nobushushu obuphezulu. Iigesi ezisebenzayo ezisetyenziswayo yi-silane SiH4 kunye ne-ammonia NH3. Ezi gesi zisebenza kwi-silicon nitride egcinwe kwi-silicon wafer. Iimpawu ezahlukeneyo zokurhawuzelela zinokufunyanwa ngokutshintsha umlinganiselo we-silane kwi-ammonia. Ngexesha lenkqubo yokufaka, inani elikhulu lee-athomu ze-hydrogen kunye nee-ion ze-hydrogen ziyaveliswa, okwenza i-hydrogen passivation ye-wafer ibe ntle kakhulu. Kwi-vacuum kunye nobushushu obuphakathi obuyi-480 degrees Celsius, umaleko we-SixNy ugqunywa phezu komphezulu we-silicon wafer ngokwenza iInqanawa yegrafayithi yePECVD.

 

3SiH4+4NH3 → Si3N4+12H2

 

2. I-Si3N4

Umbala wefilimu yeSi3N4 uyatshintsha ngokobukhulu bayo. Ngokubanzi, ubukhulu obufanelekileyo buphakathi kwe-75 kunye ne-80 nm, ebonakala iluhlaza okwesibhakabhaka. Isalathisi sokuchasana kwefilimu yeSi3N4 singcono phakathi kwe-2.0 kunye ne-2.5. Utywala ludla ngokusetyenziswa ukulinganisa isalathisi sokuchasana kwayo.

Isiphumo esihle kakhulu sokudlula komphezulu, ukusebenza kakuhle kokuchasana nokukhanya (ukulinganisa ubukhulu be-refractive index), inkqubo yobushushu obuphantsi (ukunciphisa iindleko ngempumelelo), kunye nee-H ion ezivelisiweyo zidlula umphezulu we-silicon wafer.

 

3. Imiba eqhelekileyo kwindawo yokusebenzela yokugquma

Ubukhulu befilimu: 

Ixesha lokubeka izinto lahlukile kwiindidi ezahlukeneyo zefilimu. Ixesha lokubeka izinto kufuneka lonyuswe okanye lincitshiswe ngokufanelekileyo ngokwemibala yengubo. Ukuba ifilimu imhlophe, ixesha lokubeka izinto kufuneka lincitshiswe. Ukuba ibomvu, kufuneka yonyuswe ngokufanelekileyo. Inqanawa nganye yeefilimu kufuneka iqinisekiswe ngokupheleleyo, kwaye iimveliso ezineziphene azivumelekanga ukuba zingene kwinkqubo elandelayo. Umzekelo, ukuba ingubo ayilunganga, njengeendawo ezinemibala kunye neempawu zamanzi, ukumhlophe okuqhelekileyo komphezulu, umahluko wombala, kunye namabala amhlophe kumgca wemveliso kufuneka kukhethwe ngexesha. Ukumhlophe komphezulu kubangelwa kakhulu yifilimu ye-silicon nitride etyebileyo, enokulungiswa ngokulungelelanisa ixesha lokubeka ifilimu; ifilimu yomahluko wombala ibangelwa kakhulu kukuvaleka kwendlela yegesi, ukuvuza kwetyhubhu ye-quartz, ukusilela kwe-microwave, njl.njl.; amabala amhlophe abangelwa kakhulu ngamabala amnyama amancinci kwinkqubo yangaphambili. Ukubeka esweni ukuqaqamba, isalathisi sokuqaqamba, njl.njl., ukhuseleko lweegesi ezikhethekileyo, njl.njl.

 

Amabala amhlophe phezu komhlaba:

I-PECVD yinkqubo ebaluleke kakhulu kwiiseli zelanga kwaye luphawu olubalulekileyo lokusebenza kakuhle kweeseli zelanga zenkampani. Inkqubo ye-PECVD ixakeke kakhulu, kwaye iqela ngalinye leeseli kufuneka lijongwe. Kukho iityhubhu ezininzi zokugquma i-furnace, kwaye ityhubhu nganye ngokubanzi inamakhulu eeseli (kuxhomekeke kwizixhobo). Emva kokutshintsha iiparameter zenkqubo, umjikelo wokuqinisekisa uba mde. Itekhnoloji yokugquma yitekhnoloji ebaluleke kakhulu kushishino lonke lwe-photovoltaic. Ukusebenza kakuhle kweeseli zelanga kunokuphuculwa ngokuphucula itekhnoloji yokugquma. Kwixesha elizayo, itekhnoloji yomphezulu weeseli zelanga inokuba yinkqubela phambili ekusebenzeni kakuhle kweeseli zelanga.