ISiC Coated Graphite Halfmoon Partyinxalenye ephambili esetyenziswa kwiinkqubo zokwenziwa kwe-semiconductor, ngakumbi kwizixhobo ze-SiC epitaxial. Uyilo lwayo lwesakhiwo kunye neempawu zezinto eziphathekayo zichaza ngokuthe ngqo umgangatho kunye nokusebenza kakuhle kwemveliso ye-epitaxial wafers.
Ulwakhiwo lwegumbi lokuphendula:
Inxalenye yesiqingatha senyanga yenziwe ngamacandelo amabini, amacandelo angaphezulu nasezantsi, ahlanganiswe ndawonye ukuze enze igumbi lokukhula elivaliweyo, elithatha i-silicon carbide substrate (ngokuqhelekileyo i-4H-SiC okanye i-6H-SiC) kwaye ifezekise ukukhula kwe-epitaxial ngokulawula ngokuchanekileyo i-gas flow field (ezifana nomxube we-H, H₂, H₂).
Ummiselo wendawo yobushushu:
Isiseko segraphite esicocekileyo esidityaniswe ne-coil yokufudumeza i-induction inokugcina ukulingana kwegumbi lokushisa (ngaphakathi kwe-± 5 ° C) kwiqondo lokushisa eliphezulu le-1500-1700 ° C ukuqinisekisa ukuhambelana kobunzima be-epitaxial layer.
Isikhokelo sokuhamba komoya:
Ngokuyila indawo ye-air inlet kunye ne-outlet (efana ne-air inlet kunye ne-air outlet ephezulu ye-horizontal furnace body), i-reaction gas laminar flow flow ikhokelwa kwi-substrate surface ukunciphisa iziphene zokukhula ezibangelwa yi-turbulence.
Izinto ezisisiseko: igraphite ecocekileyo
Iimfuno zokucoceka:umxholo wekhabhoni ≥99.99%, umxholo womlotha ≤5ppm, ukuze kuqinisekiswe ukuba akukho nkunkuma iyancipha ukungcolisa i-epitaxial layer kumaqondo aphezulu okushisa.
Iinzuzo zokusebenza:
Ukuhanjiswa kwe-thermal ephezulu:I-thermal conductivity kwiqondo lokushisa legumbi lifikelela kwi-150W / (m · K), esondele kwinqanaba lobhedu kwaye inokudlulisa ubushushu ngokukhawuleza.
I-coefficient yokwandisa okuphantsi:5×10-6/℃ (25-1000℃), ehambelana ne-silicon carbide substrate (4.2×10)-6/℃), ukunciphisa ukuqhekeka kwengubo ebangelwa luxinzelelo lwe-thermal.
Ukulungiswa kokuchaneka:Ukunyamezela kwe-dimensional ± 0.05mm kuphunyezwa ngomatshini we-CNC ukuqinisekisa ukutywinwa kwegumbi.
Usetyenziso olwahlukileyo lwe-CVD SiC kunye ne-CVD TaC
| Ukwaleka | Inkqubo | Ukuthelekisa | Usetyenziso oluqhelekileyo |
| CVD-SiC | Ubushushu: 1000-1200℃Uxinzelelo: 10-100 Torr | Ukuqina kwe-HV2500, ubukhulu be-50-100um, ukuxhathisa okugqwesileyo kwe-oxidation (izinzile ngaphantsi kwe-1600 ℃) | I-Universal epitaxial furnaces, ifanelekile kwi-atmospheres eqhelekileyo njenge-hydrogen kunye ne-silane |
| I-CVD-TaC | Ubushushu: 1600-1800℃Uxinzelelo: 1-10 Torr | Ukuqina kwe-HV3000, ubukhulu obuyi-20-50um, bumelana nomhlwa ngokugqithisileyo (bunokumelana neegesi ezityiwayo ezifana ne-HCl, NH₃, njl.) | Iindawo ezinobungozi kakhulu (ezifana ne-GaN epitaxy kunye ne-etching equipment), okanye iinkqubo ezikhethekileyo ezifuna amaqondo obushushu aphezulu angama-2600 ° C. |
I-VET Energy ngumvelisi oqeqeshiweyo ogxile kwi-R & D kunye nokuveliswa kwezinto eziphezulu eziphezulu ezifana negraphite, i-silicon carbide, i-quartz, kunye nonyango lwezinto eziphathekayo ezifana ne-SiC yokugqoka, i-TaC yokugqoka, i-glassy carbon coating, i-pyrolytic ye-carbon coating, njl.
Iqela lethu lobuchwephesha livela kumaziko aphezulu ophando lwasekhaya, linokubonelela ngezisombululo zemathiriyeli yobuchwephesha.
Izibonelelo zamandla e-VET ziquka:
• Umzi-mveliso ongowakho kunye nelebhu yobungcali;
• Amanqanaba okucoceka ahamba phambili kushishino kunye nomgangatho;
• Ixabiso elikhuphisanayo kunye nexesha lokuhanjiswa ngokukhawuleza;
• Intsebenziswano yamashishini amaninzi kwihlabathi jikelele;
Siyakwamkela ukuba ujonge umzi-mveliso wethu kunye nelabhoratri nangaliphi na ixesha!
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