Abubuwan da ke cikin graphite masu tsabta suna da mahimmanci gaTsarin aiki a masana'antar semiconductor, LED da kuma hasken rana. Abubuwan da muke bayarwa sun kama daga abubuwan amfani da graphite don yankunan zafi masu girma na lu'ulu'u (masu dumama, masu hana ruwa shiga, rufi), zuwa manyan abubuwan graphite don kayan aikin sarrafa wafer, kamar su masu hana ruwa shiga na silicon carbide don Epitaxy ko MOCVD. Nan ne graphite na musamman ya shigo cikin wasa: isostatic graphite muhimmin abu ne don samar da yadudduka na semiconductor masu hade. Ana samar da waɗannan a cikin "yankin zafi" a ƙarƙashin yanayin zafi mai tsanani yayin abin da ake kira epitaxy, ko MOCVD. Mai ɗaukar kaya mai juyawa wanda aka lu'ulu'u a cikin reactor, ya ƙunshi graphite isostatic mai rufi da silicon carbide. Wannan graphite mai tsabta, mai kama da juna ne kawai ya cika manyan buƙatu a cikin tsarin rufewa.
TBabban ka'idar ci gaban wafer na epitaxial na LED shine: akan wani abu mai siffar (musamman saffir, SiC da Si) wanda aka dumama zuwa yanayin zafi mai dacewa, ana jigilar kayan iskar gas na InGaAlP zuwa saman substrate ta hanyar da aka sarrafa don haɓaka takamaiman fim ɗin lu'ulu'u guda ɗaya. A halin yanzu, fasahar girma na wafer epitaxial na LED galibi tana ɗaukar ajiyar tururin sinadarai na ƙarfe na halitta.
Kayan aikin substrate na LED epitaxialshine ginshiƙin ci gaban fasaha na masana'antar hasken semiconductor. Kayan substrate daban-daban suna buƙatar fasahar haɓakar wafer na LED daban-daban, fasahar sarrafa guntu da fasahar marufi na na'urori. Kayan substrate suna ƙayyade hanyar haɓaka fasahar hasken semiconductor.
Halaye na zaɓin kayan aikin wafer epitaxial na LED:
1. Kayan epitaxial yana da tsari iri ɗaya ko makamancin haka na lu'ulu'u tare da substrate, ƙaramin rashin daidaituwa na lattice, kyakkyawan lu'ulu'u da ƙarancin lahani.
2. Kyakkyawan halaye na dubawa, wanda ke taimakawa wajen samar da kayan epitaxial da kuma mannewa mai ƙarfi
3. Yana da kyakkyawan daidaiton sinadarai kuma ba shi da sauƙin ruɓewa da lalatawa a yanayin zafi da yanayin ci gaban epitaxial.
4. Kyakkyawan aikin zafi, gami da kyakkyawan ƙarfin lantarki na thermal da ƙarancin rashin daidaiton thermal
5. Kyakkyawan watsawa, ana iya yin shi zuwa saman da ƙasan tsarin 6, kyakkyawan aikin gani, kuma hasken da na'urar da aka ƙera ba ta shanye shi da ƙasa.
7. Kyakkyawan halayen injiniya da sauƙin sarrafa na'urori, gami da rage kiba, gogewa da yankewa
8. Farashi mai rahusa.
9. Girman girma. Gabaɗaya, diamita ba zai zama ƙasa da inci 2 ba.
10. Yana da sauƙin samun siffar substrate na yau da kullun (sai dai idan akwai wasu buƙatu na musamman), kuma siffar substrate ɗin da ta yi kama da ramin tire na kayan aikin epitaxial ba abu ne mai sauƙi ba don samar da wutar lantarki mara tsari, don haka yana shafar ingancin epitaxial.
11. Dangane da rashin shafar ingancin epitaxial, injin da ke cikin substrate zai cika buƙatun sarrafa guntu da marufi na gaba gwargwadon iko.
Yana da matuƙar wahala ga zaɓin substrate ya cika waɗannan fannoni goma sha ɗaya a lokaci gudaSaboda haka, a halin yanzu, za mu iya daidaitawa da R&D da kuma samar da na'urorin haske masu fitar da haske na semiconductor akan nau'ikan substrates daban-daban ta hanyar canjin fasahar girma ta epitaxial da kuma daidaita fasahar sarrafa na'urori. Akwai kayan substrates da yawa don binciken gallium nitride, amma akwai substrates guda biyu kawai da za a iya amfani da su don samarwa, wato sapphire Al2O3 da silicon carbideSiC substrates.
Lokacin Saƙo: Fabrairu-28-2022