Zvikamu zvegrafiti zvine kuchena kwakanyanya zvakakosha kutimaitiro muindasitiri ye semiconductor, LED uye solar. Zvinhu zvedu zvinotangira pakushandisa graphite munzvimbo dzinopisa dzinokura nekristaro (maheater, crucible susceptors, insulation), kusvika kuzvikamu zve graphite zvakanyatsonaka zvemidziyo yekugadzira wafer, senge silicon carbide coated graphite susceptors yeEpitaxy kana MOCVD. Apa ndipo panoshanda graphite yedu yakakosha: isostatic graphite yakakosha pakugadzira compound semiconductor layers. Izvi zvinogadzirwa mu "hot zone" pasi pekupisa kwakanyanya panguva inonzi epitaxy, kana MOCVD process. Chinotakura chinotenderera icho wafers dzakaputirwa mu reactor, chine silicon carbide-coated isostatic graphite. Iyi graphite yakachena, yakafanana chete ndiyo inosangana nezvinodiwa zvakanyanya mu coating process.
TNheyo huru yekukura kwewafer ye LED epitaxial ndeye: pachinhu chinodziya (kunyanya sapphire, SiC neSi) kusvika pakupisa kwakakodzera, gasi rinonzi InGaAlP rinotakurwa kuenda pamusoro pechinhu chinodziya nenzira inodzorwa kuti rikure firimu rekristaro rimwe chete. Parizvino, tekinoroji yekukura kwe LED epitaxial wafer inonyanya kushandisa organic metal chemical vapor deposition.
Zvinhu zve LED epitaxial substratendiyo musimboti wekuvandudzwa kwetekinoroji yeindasitiri yemwenje yesemiconductor. Zvinhu zvakasiyana zve substrate zvinoda tekinoroji yakasiyana ye LED epitaxial wafer growth, tekinoroji yekugadzirisa machipisi uye tekinoroji yekurongedza zvishandiso. Zvinhu zve substrate zvinosarudza nzira yekugadzirwa kwetekinoroji yemwenje yesemiconductor.
Hunhu hwesarudzo yezvinhu zve LED epitaxial wafer substrate:
1. Chinhu che epitaxial chine chimiro chekristaro chakafanana kana chakafanana nechikamu chepasi, kusawirirana kudiki kwelatifomu, kristallinity yakanaka uye defect density yakaderera
2. Hunhu hwakanaka hwechiratidziro, hunobatsira kuti zvinhu zve epitaxial zviite sezvisina kusimba uye kuti zvinamire zvakasimba
3. Ine kugadzikana kwakanaka kwemakemikari uye haisi nyore kuora nekuora mukupisa uye mamiriro ekunze ekukura kwe epitaxial.
4. Kushanda zvakanaka kwekupisa, kusanganisira kufambisa zvakanaka kwekupisa uye kusawirirana kwakaderera kwekupisa
5. Kufambisa zvakanaka, kunogona kugadzirwa muchimiro chepamusoro nechepasi 6, kushanda zvakanaka kwemaziso, uye chiedza chinoburitswa nemudziyo wakagadzirwa hachina kunyanya kunyudzwa nesubstrate.
7. Hunhu hwakanaka hwemakanika uye nyore kugadzirisa zvishandiso, zvinosanganisira kutetepa, kupolisha uye kucheka
8. Mutengo wakaderera.
9. Saizi hombe. Kazhinji, dhayamita haifanirwe kunge iri pasi pemasendimita maviri.
10. Zviri nyore kuwana substrate ine chimiro chakajairika (kunze kwekunge paine zvimwe zvinodiwa), uye chimiro che substrate chakafanana neburi retireyi remidziyo ye epitaxial hachina kujeka kuti chigadzire eddy current isina kurongeka, zvekuti zvinokanganisa kunaka kwe epitaxial.
11. Pamusana pekuti hazvikanganisi kunaka kwe epitaxial, kugona kwe substrate kunofanira kusangana nezvinodiwa zvekugadzirisa chip nekurongedza zvinotevera sezvinobvira.
Zvakaoma zvikuru kuti sarudzo ye substrate isangane nezvinhu gumi nerimwe zvataurwa pamusoro apa panguva imwe chete.Saka, pari zvino, tinogona kungochinjika kuR & D uye kugadzirwa kwemidziyo inoburitsa chiedza che semiconductor pane substrates dzakasiyana kuburikidza nekuchinja kwetekinoroji yekukura kwe epitaxial uye kugadzirisa tekinoroji yekugadzirisa michina. Kune zvinhu zvakawanda zve substrate zve gallium nitride research, asi kune substrates mbiri chete dzinogona kushandiswa kugadzira, dzinoti sapphire Al2O3 uye silicon carbide.Zvigadziko zveSiC.
Nguva yekutumira: Kukadzi-28-2022