Izinto zegrafiti ezicocekileyo kakhulu zibalulekileIinkqubo kwishishini le-semiconductor, i-LED kunye nelanga. Izinto esizithengisayo ziqala kwizinto ezisetyenziswa yi-graphite kwiindawo ezishushu ezikhulisa i-crystal (ii-heaters, ii-crucible susceptors, i-insulation), ukuya kwizinto ze-graphite ezichanekileyo kakhulu kwizixhobo zokucubungula i-wafer, ezifana nee-silicon carbide coated graphite susceptors ze-Epitaxy okanye i-MOCVD. Kulapho i-graphite yethu ekhethekileyo idlala khona: i-isostatic graphite ibalulekile ekuveliseni ii-compound semiconductor layers. Ezi ziveliswa "kwindawo eshushu" phantsi kobushushu obugqithisileyo ngexesha lenkqubo ebizwa ngokuba yi-epitaxy, okanye i-MOCVD. Isithwali esijikelezayo apho ii-wafers zigqunywe khona kwi-reactor, siquka i-silicon carbide-coated isostatic graphite. Yile graphite icocekileyo kakhulu, ehambelanayo kuphela ehlangabezana neemfuno eziphezulu kwinkqubo yokugcoba.
TUmgaqo osisiseko wokukhula kwe-wafer ye-epitaxial ye-LED ngu: kwi-substrate (ngokuyintloko i-sapphire, i-SiC kunye ne-Si) eshushu ukuya kubushushu obufanelekileyo, izinto zegesi i-InGaAlP zithuthwa ziye kumphezulu we-substrate ngendlela elawulwayo ukuze kukhule ifilimu ethile yekristale enye. Okwangoku, iteknoloji yokukhula kwe-LED epitaxial wafer isebenzisa ikakhulu i-organic metal chemical vapor deposition.
Izinto ze-substrate ze-LED ze-epitaxiallilitye lesiseko lophuhliso lobuchwepheshe boshishino lokukhanyisa i-semiconductor. Izixhobo ezahlukeneyo ze-substrate zifuna ubuchwepheshe obahlukeneyo bokukhulisa i-epitaxial wafer ye-LED, ubuchwepheshe bokucubungula iitshiphusi kunye nobuchwepheshe bokupakisha izixhobo. Izixhobo ze-substrate zimisela indlela yophuhliso lobuchwepheshe bokukhanyisa i-semiconductor.
Iimpawu zokukhethwa kwezinto ze-substrate ze-LED epitaxial wafer:
1. Izinto ze-epitaxial zinesakhiwo sekristale esifanayo okanye esifana nesakhelo, ukungafani rhoqo kwelatisi encinci, ubukristale obuhle kunye noxinano oluphantsi lwesiphene
2. Iimpawu ezilungileyo zojongano, ezinceda ukwakheka kwezinto ze-epitaxial kunye nokunamathela okuqinileyo
3. Izinzile kakuhle kwiikhemikhali kwaye akulula ukuyibola nokugqwala kubushushu nomoya wokukhula kwe-epitaxial
4. Ukusebenza kakuhle kobushushu, kubandakanya ukuqhuba kakuhle kobushushu kunye nokungafani kakuhle kobushushu
5. Ukuqhuba kakuhle, kungenziwa kwisakhiwo esiphezulu nesisezantsi 6, ukusebenza kakuhle kwe-optical, kwaye ukukhanya okukhutshelwa sisixhobo esenziweyo akufunxwa kakhulu yi-substrate
7. Iipropati ezilungileyo zoomatshini kunye nokulungiswa okulula kwezixhobo, kubandakanya ukuncitshiswa, ukupolisha kunye nokusika
8. Ixabiso eliphantsi.
9. Ubukhulu obukhulu. Ngokubanzi, ububanzi abuyi kuba ngaphantsi kwee-intshi ezi-2.
10. Kulula ukufumana i-substrate enemilo eqhelekileyo (ngaphandle kokuba kukho ezinye iimfuno ezikhethekileyo), kwaye i-substrate efana nomngxuma wetreyi yezixhobo ze-epitaxial akulula ukwenza i-eddy current engaguqukiyo, ukuze ichaphazele umgangatho we-epitaxial.
11. Ngenxa yokuba ayichaphazeli umgangatho we-epitaxial, ukusebenza kakuhle kwe-substrate kuya kuhlangabezana neemfuno zokulungiswa kwe-chip kunye nokupakisha okulandelayo kangangoko kunokwenzeka.
Kunzima kakhulu ukuba ukhetho lwe-substrate luhlangabezane nezi nkalo zilishumi elinanye zingasentla ngaxeshanye.Ngoko ke, okwangoku, sinokuziqhelanisa kuphela ne-R & D kunye nokuveliswa kwezixhobo ezikhupha ukukhanya kwe-semiconductor kwii-substrates ezahlukeneyo ngokutshintsha iteknoloji yokukhula kwe-epitaxial kunye nokulungiswa kweteknoloji yokucubungula izixhobo. Kukho izinto ezininzi ze-substrate zophando lwe-gallium nitride, kodwa kukho ii-substrates ezimbini kuphela ezinokusetyenziselwa ukuvelisa, ezizezi: i-sapphire Al2O3 kunye ne-silicon carbide.Ii-substrates ze-SiC.
Ixesha lokuthumela: Feb-28-2022