Izingxenye ze-graphite ezihlanzekile kakhulu zibalulekileizinqubo embonini ye-semiconductor, LED kanye ne-solar. Ukunikezwa kwethu kuhluka kusukela ezintweni ezisetshenziswayo ze-graphite zezindawo ezishisayo ezikhula ngekristalu (ama-heater, ama-crucible susceptors, i-insulation), kuya ezingxenyeni ze-graphite ezinembile kakhulu zemishini yokucubungula i-wafer, njenge-silicon carbide coated graphite susceptors ye-Epitaxy noma i-MOCVD. Yilapho i-graphite yethu ekhethekile idlala khona indima: i-isostatic graphite iyisisekelo ekukhiqizweni kwezingqimba ze-semiconductor ezihlanganisiwe. Lezi zikhiqizwa "endaweni eshisayo" ngaphansi kwamazinga okushisa aphezulu ngesikhathi senqubo ebizwa ngokuthi i-epitaxy, noma i-MOCVD. Isithwali esijikelezayo lapho ama-wafer ambozwe khona ku-reactor, sakhiwe yi-silicon carbide-coated isostatic graphite. Yile graphite emsulwa kakhulu, ehambisanayo kuphela ehlangabezana nezidingo eziphezulu enqubweni yokumboza.
TIsimiso esiyisisekelo sokukhula kwe-wafer ye-LED epitaxial siwukuthi: ku-substrate (ikakhulukazi i-sapphire, i-SiC kanye ne-Si) eshiswa ngezinga lokushisa elifanele, izinto zegesi i-InGaAlP zithuthwa ziye endaweni ye-substrate ngendlela elawulwayo ukuze kukhule ifilimu ethile yekristalu eyodwa. Njengamanje, ubuchwepheshe bokukhula be-wafer ye-LED epitaxial busebenzisa kakhulu ukufakwa komphunga wamakhemikhali ensimbi ephilayo.
Izinto ze-substrate ze-LED epitaxialiyitshe lesisekelo sentuthuko yezobuchwepheshe embonini yokukhanyisa kwe-semiconductor. Izinto ezahlukene ze-substrate zidinga ubuchwepheshe obuhlukile bokukhula kwe-LED epitaxial wafer, ubuchwepheshe bokucubungula ama-chip kanye nobuchwepheshe bokupakisha amadivayisi. Izinto ze-substrate zinquma indlela yokuthuthukiswa kobuchwepheshe bokukhanyisa kwe-semiconductor.
Izici zokukhethwa kwezinto ze-substrate ze-LED epitaxial wafer substrate:
1. Izinto ze-epitaxial zinesakhiwo sekristalu esifanayo noma esifanayo nesisekelo, ukungafani okungaguquki kwe-lattice encane, ubukristalu obuhle kanye nobuningi obuphansi besici
2. Izici ezinhle zesikhombikubona, ezihambisana nokwakheka kwezinto ze-epitaxial kanye nokunamathela okuqinile
3. Iqinile kahle ngamakhemikhali futhi akulula ukubola nokugqwala emazingeni okushisa kanye nasemkhathini wokukhula kwe-epitaxial
4. Ukusebenza kahle kokushisa, okuhlanganisa ukuhanjiswa okuhle kokushisa kanye nokungafani okuphansi kokushisa
5. Ukuqhuba kahle komoya, kungenziwa ngesakhiwo esingaphezulu nesingezansi 6, ukusebenza kahle kokukhanya, futhi ukukhanya okukhishwa yidivayisi eyenziwe akumuncwa kakhulu yi-substrate
7. Izakhiwo ezinhle zemishini kanye nokucutshungulwa okulula kwamadivayisi, okuhlanganisa ukuncipha, ukupholisha kanye nokusika
8. Intengo ephansi.
9. Usayizi omkhulu. Ngokuvamile, ububanzi akufanele bube ngaphansi kwamasentimitha angu-2.
10. Kulula ukuthola i-substrate enesimo esijwayelekile (ngaphandle kokuthi kunezinye izidingo ezikhethekile), futhi isimo se-substrate esifana nembobo yethreyi yemishini ye-epitaxial akulula ukwenza i-eddy current engajwayelekile, ukuze kuthinte ikhwalithi ye-epitaxial.
11. Ngenxa yokuthi ayithinti ikhwalithi ye-epitaxial, ukusebenza kahle kwe-substrate kufanele kuhlangabezane nezidingo zokucubungula ama-chip nokupakisha okulandelayo ngangokunokwenzeka.
Kunzima kakhulu ukuthi ukukhetha i-substrate kuhlangabezane nezici eziyishumi nanye ezingenhla ngesikhathi esisodwa.Ngakho-ke, njengamanje, singazivumelanisa kuphela ne-R & D kanye nokukhiqizwa kwamadivayisi akhipha ukukhanya kwe-semiconductor kuma-substrate ahlukene ngokushintsha ubuchwepheshe bokukhula kwe-epitaxial kanye nokulungiswa kobuchwepheshe bokucubungula amadivayisi. Kunezinhlobo eziningi zezinto ezisetshenziswayo zocwaningo lwe-gallium nitride, kodwa kunezinhlobo ezimbili kuphela ezingasetshenziswa ekukhiqizeni, okuyi-sapphire Al2O3 kanye ne-silicon carbide.Izisekelo ze-SiC.
Isikhathi sokuthunyelwe: Feb-28-2022