Karolo ea Graphite e koahetsoeng ka SiCke karolo ea bohlokoa e sebelisoang lits'ebetsong tsa tlhahiso ea li-semiconductor, haholo-holo bakeng sa lisebelisoa tsa epitaxial tsa SiC. Moralo oa eona oa sebopeho le thepa ea thepa li khetholla ka ho toba boleng le katleho ea tlhahiso ea li-wafer tsa epitaxial.
Kaho ea kamore ea karabelo:
Karolo ea halofo ea khoeli e entsoe ka likarolo tse peli, likarolo tse ka holimo le tse ka tlase, tse kopantsoeng hammoho ho etsa kamore e koetsoeng ea kholo, e amohelang substrate ea silicon carbide (hangata 4H-SiC kapa 6H-SiC) 'me e fihlella kholo ea lera la epitaxial ka ho laola tšimo ea phallo ea khase ka nepo (joalo ka motsoako oa SiH₄, C₃H₈, le H₂).
Taolo ea tšimo ea mocheso:
Motheo oa graphite o hloekileng haholo hammoho le coil ea ho futhumatsa ea induction li ka boloka ho tšoana ha mocheso oa kamore (ka hare ho ± 5°C) mochesong o phahameng oa 1500-1700°C ho netefatsa botsitso ba botenya ba lera la epitaxial.
Tataiso ea phallo ea moea:
Ka ho rala sebaka sa ho kena le ho ntsha moya (jwalo ka ho kena le ho ntsha moya ka lehlakoreng le ho ntsha moya ka hodimo mmeleng wa sebopi se bataletseng), phallo ya laminar ya kgase ya karabelo e tataiswa hodima bokahodimo ba substrate ho fokotsa diphoso tsa kgolo tse bakwang ke moferefere.
Lisebelisoa tsa motheo: graphite e hloekileng haholo
Litlhoko tsa bohloeki:dikahare tsa khabone ≥99.99%, dikahare tsa molora ≤5ppm, ho netefatsa hore ha ho ditshila tse tshwaetswang ho silafatsa lera la epitaxial mochesong o phahameng.
Melemo ea ts'ebetso:
Ho khanna ha mocheso o phahameng:Ho tsamaisa mocheso mochesong oa kamore ho fihla ho 150W/(m・K), e leng haufi le boemo ba koporo 'me e ka fetisa mocheso kapele.
Koefficient e tlase ea katoloso:5 × 10-6/℃ (25-1000℃), e tsamaellanang le substrate ea silicon carbide (4.2×10-6/℃), ho fokotsa ho petsoha ha lesela le bakwang ke kgatello ya mocheso.
Ho nepahala ha ts'ebetso:Ho mamellana ha boholo ba ±0.05mm ho fihlellwa ka ho sebetsa ka CNC ho netefatsa ho kwalwa ha kamore.
Litšebeliso tse fapaneng tsa CVD SiC le CVD TaC
| Ho koahela | Tshebetso | Papiso | Tšebeliso e tloaelehileng |
| CVD-SiC | Mocheso: 1000-1200℃ Khatello: 10-100 Torr | Bothata HV2500, botenya ba 50-100um, khanyetso e ntle ea oxidation (e tsitsitseng ka tlase ho 1600℃) | Lifono tsa epitaxial tsa bokahohleng, tse loketseng sepakapaka se tloaelehileng joalo ka haeterojene le silane |
| CVD-TaC | Mocheso: 1600-1800℃ Khatello: 1-10 Torr | Bothata ba HV3000, botenya ba 20-50um, bo hanela mafome haholo (bo ka mamella likhase tse senyang tse kang HCl, NH₃, jj.) | Libaka tse senyang haholo (tse kang GaN epitaxy le lisebelisoa tsa ho fata), kapa lits'ebetso tse ikhethang tse hlokang mocheso o phahameng haholo oa 2600°C |
VET Energy ke moetsi oa litsebi ea shebaneng le R&D le tlhahiso ea thepa e tsoetseng pele ea maemo a holimo joalo ka graphite, silicon carbide, quartz, hammoho le kalafo ea thepa joalo ka SiC coating, TaC coating, khalase carbon coating, pyrolytic carbon coating, jj. Lihlahisoa tsena li sebelisoa haholo ho photovoltaic, semiconductor, matla a macha, metallurgy, jj.
Sehlopha sa rona sa botekgeniki se tsoa litsing tse holimo tsa lipatlisiso tsa lehae, se ka u fa litharollo tse ling tsa lisebelisoa tsa profeshenale.
Melemo ea VET Energy e kenyelletsa:
• Laboratori ea fektheri le ea litsebi ea hau;
• Maemo le boleng bo hloekileng bo etellang pele indastering;
• Theko e qothisanang lehlokoa le nako e potlakileng ea ho tlisa thepa;
• Likamano tse ngata tsa indasteri lefatšeng ka bophara;
Rea u amohela ho etela fektheri le laboratori ea rona neng kapa neng!
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