Igice cya SiC Gishushanyije Igice cya kabirini ikintu cyingenzi gikoreshwa mubikorwa byo gukora semiconductor, cyane cyane kubikoresho bya epitaxial SiC. Igishushanyo mbonera cyacyo hamwe nibintu bifatika bigena neza ubwiza nubushobozi bwo gukora wafita epitaxial.
Kubaka ibyumba byubaka:
Igice cy'ukwezi kigizwe n'ibice bibiri, ibice byo hejuru no hepfo, bifatanyirijwe hamwe kugirango bibe urugereko rukura rufunze, rwakira insimburangingo ya karubone ya silicon (ubusanzwe 4H-SiC cyangwa 6H-SiC) kandi ikagera ku mikurire ya epitaxial igenzura neza umurima wa gazi (nk'uruvange rwa SiH₄, C₃H₈, na H₂).
Kugenzura umurima w'ubushyuhe:
Igicapo kinini-cyiza cya grafite ihujwe hamwe na coil yo gushyushya induction irashobora kugumana ubushyuhe bwicyumba (muri ± 5 ° C) ku bushyuhe bwo hejuru bwa 1500-1700 ° C kugirango habeho uburebure bwa epitaxial.
Ubuyobozi bwo mu kirere:
Mugushushanya aho ikirere gihurira n’isohoka (nk'umwuka wo mu kirere hamwe n'umuyaga wo hejuru wo mu itanura rya horizontal), imyuka ya gaze ya laminari iyobowe n'ubutaka kugira ngo igabanye inenge zo gukura ziterwa n'imivurungano.
Ibikoresho shingiro: grafite-yera cyane
Ibisabwa kugira isuku:karubone ≥99.99%, ivu ≤5ppm, kugirango harebwe niba nta mwanda wanduye wanduye epitaxial kurwego rwubushyuhe bwinshi.
Ibyiza byo gukora:
Amashanyarazi menshi:Ubushyuhe bwumuriro mubushyuhe bwicyumba bugera kuri 150W / (m ・ K), yegereye urwego rwumuringa kandi irashobora kohereza ubushyuhe vuba.
Coefficient yo kwaguka:5 × 10-6/ ℃ (25-1000 ℃), bihuye na silicon karbide substrate (4.2 × 10-6/ ℃), kugabanya gucamo ibice biterwa no guhangayika.
Gutunganya neza:Kwihanganirana kwa ± 0.05mm bigerwaho hifashishijwe imashini ya CNC kugirango hafungwe icyumba.
Porogaramu zitandukanye za CVD SiC na CVD TaC
| Igipfukisho | Inzira | Kugereranya | Porogaramu isanzwe |
| CVD-SiC | Ubushyuhe: 1000-1200 ℃ Umuvuduko: 10-100 Torr | Gukomera HV2500, uburebure bwa 50-100um, kurwanya okiside nziza (guhagarara munsi ya 1600 ℃) | Itanura rya epitaxial yisi yose, ibereye ikirere gisanzwe nka hydrogen na silane |
| CVD-TaC | Ubushyuhe: 1600-1800 ure Umuvuduko: 1-10 Torr | Gukomera HV3000, uburebure bwa 20-50um, birwanya ruswa cyane (birashobora kwihanganira imyuka yangirika nka HCl, NH₃, nibindi) | Ibidukikije byangirika cyane (nka GaN epitaxy nibikoresho bya etching), cyangwa inzira zidasanzwe zisaba ubushyuhe bukabije bwa dogere 2600 ° C. |
VET Energy ni uruganda rukora umwuga rwibanda kuri R&D no gukora ibikoresho byo mu rwego rwo hejuru nka grafite, karubide ya silicon, quartz, ndetse no kuvura ibikoresho nka SiC coating, TaC coating, carbone carbone, pirolitike ya karubone, n'ibindi.
Itsinda ryacu rya tekinike rituruka mubigo byubushakashatsi bwo murugo, birashobora kuguha ibisubizo byumwuga kubwawe.
Inyungu zingufu za VET zirimo:
• Uruganda bwite na laboratoire yabigize umwuga;
• Inganda ziyobora inganda nubuziranenge;
• Igiciro cyo guhatanira & Igihe cyo gutanga vuba;
• Ubufatanye butandukanye bwinganda kwisi yose;
Turakwakiriye neza kugirango ubone uruganda na laboratoire igihe icyo aricyo cyose!
