SiC Yashushanyijeho Igice cya kabiri Igice cya Silicon Carbide Epitaxial Furnace

Ibisobanuro bigufi:

VET Ingufu nuwabigize umwuga kandi utanga ibice byingenzi bigize itanura rya silicon karbide epitaxial. Igice cyacu cya SiC cyashushanyije igice cyakabiri gikoresha igishushanyo mbonera cyiza cyane hamwe na tekinoroji ya CVD igezweho. Yashizweho kubushyuhe bwo hejuru kandi bwangirika cyane epitaxial ibidukikije. Igishushanyo kinini-cyera gitanga ibice byiza birwanya ubushyuhe bwo hejuru (> 1600 ℃) hamwe nubushyuhe bwumuriro, byemeza umurima wubushyuhe; igipfundikizo cya CVD gikora urwego rwinshi rwo kurinda hejuru hifashishijwe ikoranabuhanga rya CVD, ritezimbere cyane imiti irwanya okiside na anti-etching, kandi ikongerera igihe cya serivisi inshuro zirenga 3.

 

 

 


  • Ibikoresho:Igishushanyo kinini
  • Isuku:< 5ppm
  • Igifuniko:CVD-SiC cyangwa CVD-TaC
  • Guhitamo:Itanura ryamamaza cyangwa OEM
  • Ibicuruzwa birambuye

    Ibicuruzwa

    Igice cya SiC Gishushanyije Igice cya kabirini ikintu cyingenzi gikoreshwa mubikorwa byo gukora semiconductor, cyane cyane kubikoresho bya epitaxial SiC. Twifashishije tekinoroji yacu yatanzwe kugirango igice cya kabiri cyigice gifite isuku ryinshi cyane, uburinganire bwiza hamwe nubuzima bwiza bwa serivisi, hamwe n’imiti myinshi irwanya imiti hamwe nubushyuhe bwumuriro.

    Ibikoresho shingiro: grafite-yera cyane
    Ibisabwa kugira isuku:karubone ≥99.99%, ivu ≤5ppm, kugirango harebwe niba nta mwanda wanduye wanduye epitaxial kurwego rwubushyuhe bwinshi.
    Ibyiza byo gukora:
    Amashanyarazi menshi:Ubushyuhe bwumuriro mubushyuhe bwicyumba bugera kuri 150W / (m ・ K), yegereye urwego rwumuringa kandi irashobora kohereza ubushyuhe vuba.
    Coefficient yo kwaguka:5 × 10-6/ ℃ (25-1000 ℃), bihuye na silicon karbide substrate (4.2 × 10-6/ ℃), kugabanya gucamo ibice biterwa no guhangayika.
    Gutunganya neza:Kwihanganirana kwa ± 0.05mm bigerwaho hifashishijwe imashini ya CNC kugirango hafungwe icyumba.

    Porogaramu zitandukanye za CVD SiC na CVD TaC

    Igipfukisho

    Inzira

    Kugereranya

    Porogaramu isanzwe

    CVD-SiC Ubushyuhe: 1000-1200 ℃ Umuvuduko: 10-100 Torr Gukomera HV2500, uburebure bwa 50-100um, kurwanya okiside nziza (guhagarara munsi ya 1600 ℃) Itanura rya epitaxial yisi yose, ibereye ikirere gisanzwe nka hydrogen na silane
    CVD-TaC Ubushyuhe: 1600-1800 ure Umuvuduko: 1-10 Torr Gukomera HV3000, uburebure bwa 20-50um, birwanya ruswa cyane (birashobora kwihanganira imyuka yangirika nka HCl, NH₃, nibindi) Ibidukikije byangirika cyane (nka GaN epitaxy nibikoresho bya etching), cyangwa inzira zidasanzwe zisaba ubushyuhe bukabije bwa dogere 2600 ° C.

    Kugenzura ubuziranenge

    Ubunini bwa coater: igipimo cy'uburebure bwa laser (ubunyangamugayo ± 1um) cyangwa SEM isesengura ibice.
    Imbaraga zinguzanyo: ikizamini cyo gushushanya (umutwaro uremereye> 50N) cyangwa ibizamini bya ultrasonic (umuvuduko wijwi> 5000m / s).
    Kurwanya ruswa: igipimo kinini cyo gutakaza (<0.1 mg / cm²・ h) cyageragejwe mu kirere cya HCl (5 vol%, 1600 ℃).

    Igishushanyo mbonera cya VET

    2

    3

    VET Energy ni uruganda rukora umwuga rwibanda kuri R&D no gukora ibikoresho byo mu rwego rwo hejuru nka grafite, karubide ya silicon, quartz, ndetse no kuvura ibikoresho nka SiC coating, TaC coating, carbone carbone, pirolitike ya karubone, n'ibindi.

    Itsinda ryacu rya tekinike rituruka mubigo byubushakashatsi bwo murugo, birashobora kuguha ibisubizo byumwuga kubwawe.

    Inyungu zingufu za VET zirimo:
    • Uruganda bwite na laboratoire yabigize umwuga;
    • Inganda ziyobora inganda nubuziranenge;
    • Igiciro cyo guhatanira & Igihe cyo gutanga vuba;
    • Ubufatanye butandukanye bwinganda kwisi yose;

    Turakwakiriye neza kugirango ubone uruganda na laboratoire igihe icyo aricyo cyose!

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