Indandatho ye-Graphite Ehlanganisiwe ye-CVD Silicon Carbide

Isithombe Esivelele Sendandatho Ye-Graphite Embozwe Nge-CVD Silicon Carbide

Incazelo emfushane:

Indandatho ye-graphite ehlanganiswe ne-silicon carbide ehlanganisiwe ye-VET Energy iwumkhiqizo osebenza kahle kakhulu owenzelwe ukunikeza ukusebenza okulinganayo nokuthembekile isikhathi eside. Inokumelana okuhle kakhulu nokushisa kanye nokufana kokushisa, ubumsulwa obuphezulu, ukumelana nokuguguleka, okwenza kube yisisombululo esifanele sezinhlelo zokusebenza zokucubungula i-wafer.

Sithumelele i-imeyili Landa njenge-PDF

Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

Izakhiwo Ezijwayelekile Zezinto Eziyisisekelo Ze-Graphite:

Ubuningi Obubonakalayo:	1.85 g/cm3
Ukumelana Nogesi:	11 μΩm
Amandla Okuguquguquka:	49 MPa (500kgf/cm2)
Ukuqina Kogu:	58
Umlotha:	<5ppm
Ukuqhuba Ukushisa:	116 W/mK (100 kcal/mhr-℃)

Sihlinzeka ngama-susceptor ahlukahlukene kanye nezingxenye ze-graphite zazo zonke iziqaphi zamanje ze-epitaxy. Imikhiqizo yethu ifaka phakathi ama-susceptor ebharele amayunithi e-LPE, ama-susceptor e-pancake amayunithi e-LPE, CSD, kanye ne-Gemini, kanye nama-susceptor e-single-wafer amayunithi asetshenzisiwe kanye ne-ASM.

Ngokuhlanganisa ubudlelwano obuqinile nama-OEM ahamba phambili, ubuchwepheshe bezinto zokwakha kanye nolwazi lokukhiqiza, udokotela wezilwane unikeza umklamo ofanele kakhulu wohlelo lwakho lokusebenza.

I-VET Energy iyi- iumenzi wangempela wemikhiqizo ye-graphite neye-silicon carbide eyenziwe ngokwezifiso ene-CVD coating,ingahlinzekaokuhlukahlukeneizingxenye ezenzelwe wena zemboni ye-semiconductor kanye ne-photovoltaic. OIthimba lakho lobuchwepheshe livela ezikhungweni zocwaningo zasekhaya eziphezulu, linganikeza izixazululo zezinto ezibonakalayo zobungcweti.kwakho.

Fizici zemikhiqizo yethu:

1. Ukumelana nokushisa okuphezulu kwe-oxidation kuze kufike ku-1700℃.
2. Ubumsulwa obukhulu kanyeukufana kokushisa
3. Ukumelana okuhle kakhulu nokugqwala: i-asidi, i-alkali, usawoti kanye nama-reagent e-organic.
4. Ubulukhuni obuphezulu, ubuso obuncane, izinhlayiya ezincane.
5. Impilo yesevisi ende futhi ihlala isikhathi eside

I-CVD SiC薄膜基本物理性能 Izakhiwo eziyisisekelo zomzimba ze-CVD SiCukugqoka
性质 / Impahla	典型数值 / Inani Elijwayelekile
晶体结构 / Isakhiwo sekristalu	Isigaba se-β se-FCC多晶，主要為（111）取向
密度 / Ubuningi	3.21 g/cm³
硬度 / Ubulukhuni	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Usayizi Wokusanhlamvu	2 ~ 10μm
纯度 / Ukuhlanzeka Kwamakhemikhali	99.99995%
热容 / Amandla Okushisa	640 J·kg^-1·K^-1
升华温度 / Izinga Lokushisa Elingaphansi	2700℃
抗弯强度 / Amandla Okugobeka	I-415 MPa RT amaphuzu angu-4
杨氏模量 / I-Modulus yentsha	I-430 Gpa 4pt bend, 1300℃
导热系数 / I-ThermalUkuqhuba	300W·m^-1·K^-1
热膨胀系数 / Ukwanda Kokushisa (i-CTE)	4.5×10^-6K^-1