Kutheni iindonga ezisecaleni zigoba xa kugrunjwa okomileyo?

Ukungafaneki kwe-ion bombardment

YomileukukrolaNgokuqhelekileyo yinkqubo edibanisa iziphumo zomzimba nezekhemikhali, apho ukuqhushumba kwee-ion kuyindlela ebalulekileyo yokugrumba emzimbeni. Ngexeshainkqubo yokukrola, i-engile yesiganeko kunye nokusasazwa kwamandla kwee-ions kusenokungalingani.

Ukuba i-engile yesiganeko se-ion yahlukile kwiindawo ezahlukeneyo eludongeni olusecaleni, isiphumo sokugcaba kwee-ion eludongeni olusecaleni siya kwahluka. Kwiindawo ezinee-engile ezinkulu zesiganeko se-ion, isiphumo sokugcaba kwee-ion eludongeni olusecaleni sinamandla ngakumbi, nto leyo eya kubangela ukuba udonga olusecaleni kule ndawo lugcabe ngakumbi, nto leyo eya kubangela ukuba udonga olusecaleni lugobe. Ukongeza, ukusasazwa okungalinganiyo kwamandla e-ion nako kuya kuvelisa iziphumo ezifanayo. Ii-ion ezinamandla aphezulu zinokususa izinto ngokufanelekileyo, nto leyo ebangela ukungangqinelani.ukukrolaamazinga odonga olusecaleni kwiindawo ezahlukeneyo, nto leyo ebangela ukuba udonga olusecaleni lugobe.

Impembelelo ye-photoresist

I-Photoresist idlala indima yemaski ekugrumbeni okomileyo, ikhusela iindawo ezingadingi kugrumbeni. Nangona kunjalo, i-photoresist ikwachaphazeleka kukuqhuma kwe-plasma kunye neempendulo zeekhemikhali ngexesha lenkqubo yokugrumbeni, kwaye ukusebenza kwayo kunokutshintsha.

Ukuba ubukhulu be-photoresist abulingani, izinga lokusetyenziswa ngexesha lenkqubo yokugrumba alingqinelani, okanye ukunamathelana phakathi kwe-photoresist kunye ne-substrate kwahlukile kwiindawo ezahlukeneyo, kunokukhokelela ekukhuselekeni okungalinganiyo kwezindonga zamacala ngexesha lenkqubo yokugrumba. Umzekelo, iindawo ezine-photoresist encinci okanye ukunamathela okubuthathaka zinokwenza izinto ezingaphantsi zigrumbe lula, nto leyo ebangela ukuba izindonga zamacala zigobe kwezi ndawo.

Umahluko kwiipropati zezinto ze-substrate

Izinto ezifakwe i-substrate ngokwazo zinokuba neempawu ezahlukeneyo, ezifana neendlela ezahlukeneyo zekristale kunye noxinzelelo lwe-doping kwiindawo ezahlukeneyo. Olu mahluko luya kuchaphazela izinga lokugrumba kunye nokukhetha ukugrumba.
Umzekelo, kwi-crystalline silicon, ulungelelwaniso lwee-athomu ze-silicon kwiindawo ezahlukeneyo ze-crystal lwahlukile, kwaye i-reactivity yazo kunye ne-etching rate kunye ne-etching gas nazo ziya kwahluka. Ngexesha lenkqubo ye-etching, amazinga ahlukeneyo e-etching abangelwa kukwahluka kweempawu zezinto ezibonakalayo aya kwenza ubunzulu be-etching bee-sidewalls kwiindawo ezahlukeneyo bungangqinelani, ekugqibeleni kukhokelele ekugobeni kwe-sidewall.

Izinto ezinxulumene nezixhobo

Ukusebenza kunye nemeko yezixhobo zokugrumba nazo zinempembelelo ebalulekileyo kwiziphumo zokugrumba. Umzekelo, iingxaki ezinje ngokusasazwa kweplasma engalinganiyo kwigumbi lokusabela kunye nokuguguleka kwe-electrode engalinganiyo zinokukhokelela ekusasazweni okungalinganiyo kweparameters ezifana noxinano lwe-ion kunye namandla kumphezulu we-wafer ngexesha lokugrumba.

Ukongeza, ulawulo lobushushu olungalinganiyo lwezixhobo kunye nokuguquguquka okuncinci kokuhamba kwegesi kunokuchaphazela ukufana kokukrola, okukhokelela ekugobeni kwecala.