Ingxenye ye-SiC Camera Graphite Halfmooniyisici esibalulekile esisetshenziswa ezinqubweni zokukhiqiza ze-semiconductor, ikakhulukazi imishini ye-SiC epitaxial. Ukwakheka kwayo kwesakhiwo kanye nezakhiwo zezinto ezibonakalayo kunquma ngqo ikhwalithi kanye nokusebenza kahle kokukhiqiza kwama-epitaxial wafers.
Ukwakhiwa kwegumbi lokusabela:
Ingxenye yesigamu senyanga yakhiwe izingxenye ezimbili, izingxenye eziphezulu nezingezansi, eziboshwe ndawonye ukuze zakhe igumbi lokukhula elivaliwe, elihlala i-substrate ye-silicon carbide (ngokuvamile i-4H-SiC noma i-6H-SiC) futhi ifinyelela ukukhula kwengqimba ye-epitaxial ngokulawula ngokunembile insimu yokugeleza kwegesi (njengengxube ye-SiH₄, i-C₃H₈, ne-H₂).
Ukulawulwa kwensimu yokushisa:
Isisekelo se-graphite esihlanzekile kakhulu esihlanganiswe ne-induction heating coil singagcina izinga lokushisa lekamelo lifana (ngaphakathi kuka-±5°C) ekushiseni okuphezulu okungu-1500-1700°C ukuqinisekisa ukuhambisana kobukhulu besendlalelo se-epitaxial.
Isiqondiso sokugeleza komoya:
Ngokuklama indawo yokungena nomoya (njengokungena komoya ohlangothini kanye nendawo yokungena komoya ephezulu yomzimba wesithando esivundlile), ukugeleza kwegesi yokusabela kuqondiswa ngokusebenzisa ubuso be-substrate ukunciphisa amaphutha okukhula abangelwa ukuxokozela.
Izinto eziyisisekelo: i-graphite ehlanzekile kakhulu
Izidingo zokuhlanzeka:okuqukethwe kwekhabhoni ≥99.99%, okuqukethwe komlotha ≤5ppm, ukuqinisekisa ukuthi akukho ukungcola okubangelwa ukungcolisa ungqimba lwe-epitaxial emazingeni okushisa aphezulu.
Izinzuzo zokusebenza:
Ukushisa okuphezulu:Ukushisa kwegumbi kufinyelela ku-150W/(m・K), okuseduze nezinga lethusi futhi kungadlulisa ukushisa ngokushesha.
I-coefficient yokukhulisa ephansi:5×10-6/℃ (25-1000℃), kufana ne-substrate ye-silicon carbide (4.2×10-6/℃), kunciphisa ukuqhekeka kwesembozo esibangelwa ukucindezeleka kokushisa.
Ukunemba kokucubungula:Ukubekezelelana kobukhulu obungu-±0.05mm kufinyelelwa ngomshini we-CNC ukuqinisekisa ukuvalwa kwegumbi.
Ukusetshenziswa okuhlukile kwe-CVD SiC kanye ne-CVD TaC
| Ukugqoka | Inqubo | Ukuqhathanisa | Isicelo esijwayelekile |
| I-CVD-SiC | Izinga lokushisa: 1000-1200℃ Ingcindezi: 10-100 Torr | Ukuqina HV2500, ukujiya okungu-50-100um, ukumelana okuhle kakhulu kwe-oxidation (okuzinzile ngaphansi kuka-1600℃) | Izitofu ze-epitaxial ezijwayelekile, ezifanelekela izimo ezivamile ezifana ne-hydrogen ne-silane |
| I-CVD-TaC | Izinga lokushisa: 1600-1800℃ Ingcindezi: 1-10 Torr | Ukuqina HV3000, ukujiya okungu-20-50um, ukumelana nokugqwala kakhulu (kungamelana namagesi agqwalayo njenge-HCl, i-NH₃, njll.) | Izindawo ezigqwala kakhulu (njenge-GaN epitaxy kanye nemishini yokuqopha), noma izinqubo ezikhethekile ezidinga amazinga okushisa aphezulu kakhulu angu-2600°C |
I-VET Energy ingumkhiqizi ochwepheshe ogxile ku-R&D kanye nokukhiqizwa kwezinto ezisezingeni eliphezulu ezifana ne-graphite, i-silicon carbide, i-quartz, kanye nokwelashwa kwezinto ezifana ne-SiC coating, i-TaC coating, i-glassy carbon coating, i-pyrolytic carbon coating, njll. Imikhiqizo isetshenziswa kabanzi ku-photovoltaic, i-semiconductor, amandla amasha, i-metallurgy, njll.
Ithimba lethu lobuchwepheshe livela ezikhungweni zocwaningo zasekhaya eziphezulu, lingakunikeza izixazululo zezinto zobuchwephesha ezengeziwe.
Izinzuzo ze-VET Energy zifaka:
• Ilebhu yakho yefektri kanye neyobungcweti;
• Amazinga okuhlanzeka okuhamba phambili embonini kanye nekhwalithi;
• Intengo yokuncintisana kanye nesikhathi sokulethwa okusheshayo;
• Ubambiswano oluningi lwemboni emhlabeni jikelele;
Siyakwamukela ukuthi uvakashele ifektri yethu kanye nelebhu nganoma yisiphi isikhathi!
-
Ishubhu ye-Tantalum Carbide esezingeni eliphezulu ye-SiC Crys ...
-
I-TaC Coated Graphite Crucible eyenziwe ngokwezifiso
-
Amashubhu Ambozwe Nge-Tantalum Carbide e-SiC Crystal G...
-
Izingxenye ezenziwe ngokwezifiso ezine-TaC tantalum carbide coating
-
I-Crucible Yeglasi Eyenziwe Ngokwezifiso Yelebhu ...
-
I-Tantalum carbide coated susceptor ye-wafer










