I-SiC Coated Graphite Halfmoon Partiyingxenye ebalulekile esetshenziswa ezinqubweni zokukhiqiza ze-semiconductor, ikakhulukazi kumishini ye-SiC epitaxial. Sisebenzisa ubuchwepheshe bethu obunelungelo lobunikazi ukwenza ingxenye ye-halfmoon ibe nokuhlanzeka okuphezulu kakhulu, ukufana okuhle kokumboza kanye nempilo yesevisi enhle kakhulu, kanye nokumelana namakhemikhali aphezulu kanye nezakhiwo zokuzinza kokushisa.
Izinto eziyisisekelo: i-graphite ephezulu
Izidingo zokuhlanzeka:okuqukethwe kwekhabhoni ≥99.99%, okuqukethwe komlotha ≤5ppm, ukuze kuqinisekiswe ukuthi akukho ukungcola okutholayo ukungcolisa ungqimba lwe-epitaxial emazingeni okushisa aphezulu.
Izinzuzo zokusebenza:
High thermal conductivity:I-thermal conductivity ekamelweni lokushisa ifinyelela ku-150W/(m・K), eseduze nezinga lethusi futhi ingadlulisela ukushisa ngokushesha.
I-coefficient yokunweba ephansi:5×10-6/℃ (25-1000℃), ukufanisa i-silicon carbide substrate (4.2×10-6/℃), inciphisa ukuqhekeka kwentonga ebangelwa ukucindezeleka okushisayo.
Ukucubungula ukunemba:Ukubekezelela okulinganayo okungu-±0.05mm kufinyelelwa ngomshini we-CNC ukuze kuqinisekiswe ukuvalwa kwegumbi.
Izinhlelo zokusebenza ezihlukene ze-CVD SiC ne-CVD TaC
| Ukugqoka | Inqubo | Ukuqhathanisa | Uhlelo lokusebenza olujwayelekile |
| I-CVD-SiC | Izinga lokushisa: 1000-1200℃Ingcindezi: 10-100 Torr | Ukuqina kwe-HV2500, ukujiya okungu-50-100um, ukumelana okuhle kakhulu kwe-oxidation (kuzinzile ngezansi kwe-1600 ℃) | I-Universal epitaxial furnaces, efanelekile emkhathini ovamile njenge-hydrogen ne-silane |
| I-CVD-TaC | Izinga lokushisa: 1600-1800℃Ingcindezi: 1-10 Torr | Ukuqina kwe-HV3000, ukujiya okungu-20-50um, ukumelana nokugqwala ngokweqile (kungakwazi ukumelana namagesi agqwalayo njenge-HCl, NH₃, njll.) | Izindawo ezigqwala kakhulu (ezifana ne-GaN epitaxy ne-etching equipment), noma izinqubo ezikhethekile ezidinga izinga lokushisa eliphezulu elingu-2600°C |
Ukuhlolwa kwekhwalithi
Ukujiya kokumboza: igeji yokuqina kwe-laser (ukunemba okungu-±1um) noma ukuhlaziya kwe-SEM okunqamula isigaba.
Amandla ebhondi: ukuhlolwa kokuklwebha (umthwalo obucayi > 50N) noma ukuhlolwa kwe-ultrasonic (isivinini somsindo > 5000m/s).
Ukumelana nokugqwala: izinga lokulahlekelwa okukhulu (<0.1 mg/cm²・h) kuhlolwe emkhathini we-HCl (5 vol%, 1600℃).
I-VET Energy ingumkhiqizi ochwepheshe ogxile ku-R&D kanye nokukhiqizwa kwezinto ezithuthukisiwe ezisezingeni eliphezulu njengegraphite, i-silicon carbide, i-quartz, kanye nokwelashwa okubonakalayo okufana ne-SiC coating, i-TaC coating, i-glassy carbon coating, i-pyrolytic carbon coating, njll. Imikhiqizo isetshenziswa kabanzi ku-photovoltaic, i-semiconductor, amandla amasha, i-metallurgy, njll.
Ithimba lethu lezobuchwepheshe livela ezikhungweni eziphezulu zocwaningo lwasekhaya, lingakunikeza izixazululo zempahla echwepheshile.
Izinzuzo ze-VET Energy zihlanganisa:
• Ifekthri kanye nelabhorethri yochwepheshe;
• Amazinga okuhlanzeka okuhamba phambili embonini kanye nekhwalithi;
• Intengo yokuncintisana nesikhathi sokulethwa okusheshayo;
• Ubambiswano lwezimboni eziningi emhlabeni wonke;
Siyakwamukela ukuthi uvakashele imboni yethu kanye nelabhorethri nganoma yisiphi isikhathi!
-
Abahlinzeki be-China bomhlahlandlela owenziwe ngezifiso we-TaC...
-
I-CVD Silicon Carbide Coating MOCVD Susceptor
-
I-Tantalum Carbide Coating Wafer Susceptor
-
Ikhwalithi ephezulu ye-tantalum carbide TaC coating manuf...
-
I-SiC Coated Graphite Base Carriers
-
Isikebhe esifakwe kabusha seSilicon Carbide Wafer Esine ...









